FM2100-C [FORMOSA]
Chip Schottky Barrier Diodes - Silicon epitaxial planer type; 芯片肖特基势垒二极管 - 硅外延平面型
| 型号： | FM2100-C |
| 厂家： | 
FORMOSA MS |
| 描述： | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 文件： | 总2页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Chip Schottky Barrier Diodes
Formosa MS
FM220-C THRU FM2100-C
Silicon epitaxial planer type
Features
SMA
Plastic package has Underwriters Laboratory
FlammabilityClassification 94V-O Utilizing Flame
RetardantEpoxy Molding Compound.
0.185(4.8)
0.177(4.4)
0.012(0.3) Typ.
For surface mounted applications.
0.110(2.8)
0.094(2.4)
Exceeds environmental standards of MIL-S-19500 /
228
0.165(4.2)
0.150(3.8)
Low leakage current.
0.067(1.7)
0.060(1.5)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
Mechanical data
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.00585 ounce, 0.195 gram
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
IO
MIN.
TYP.
MAX.
2.0
UNIT
A
Forward rectified current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Forward surge current
IFSM
50
A
o
VR = VRRM TA = 25 C
0.5
10
mA
mA
Reverse current
IR
o
VR = VRRM TA = 125 C
o
Thermal resistance
Junction to ambient
RqJA
CJ
75
C / w
pF
Diode junction capacitance
Storage temperature
f=1MHz and applied 4vDC reverse voltage
160
o
TSTG
-55
+150
C
Operating
*1
*2
*3
*4
MARKING
VRRM
VRMS
VR
VF
temperature
SYMBOLS
CODE
o
( C)
(V)
(V)
(V)
(V)
FM220
FM230
FM240
FM250
FM260
FM280
FM2100
SK22
SK23
SK24
SK25
SK26
SK28
S210
20
30
40
50
60
80
14
21
28
35
42
56
70
20
30
40
50
60
80
100
0.55
-55 to +125
*1 Repetitive peak reverse voltage
*2 RMS voltage
0.70
-55 to +150
*3 Continuous reverse voltage
*4 Maximum forward voltage
0.85
100
RATINGAND CHARACTERISTIC CURVES (FM220-C THRU FM2100-C)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
2.4
2.0
1.6
1.2
50
10
3.0
1.0
0.8
0.4
0
0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
.01
.1
.3
.5
.7
.9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
30
8.3ms Single Half
Sine Wave
Tj=25 C
20
10
0
JEDEC method
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
50
1
5
10
100
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
10
700
600
500
400
1.0
Tj=75 C
300
200
100
0
.1
Tj=25 C
.01
.01
.05
.1
.5
1
5
10
50
100
0
20 40 60 80 100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
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