FMBTA56 [FORMOSA]
Driver Transistor;
| 型号： | FMBTA56 |
| 厂家： | 
FORMOSA MS |
| 描述： | Driver Transistor |
| 文件： | 总9页 (文件大小：496K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Driver Transistor
Formosa MS
FMBTA55 / FMBTA56
List
List.................................................................................................
Package outline...............................................................................
Features..........................................................................................
Mechanical data...............................................................................
Maximum ratings..............................................................................
Electrical Characteristics..................................................................
Rating and characteristic curves........................................................
Pinning information...........................................................................
Marking...........................................................................................
Suggested solder pad layout.............................................................
Packing information..........................................................................
Reel packing....................................................................................
Suggested thermal profiles for soldering processes.............................
High reliability test capabilities...........................................................
1
2
2
2
2
3
4,5
6
6
6
7
8
8
9
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231164
Issued Date
2010/11/05
Revised Date
2011/07/21
Revision
B
Page.
9
Page 1
Driver Transistor
Formosa MS
FMBTA55 / FMBTA56
Driver PNP Transistor
Package outline
SOT-23
Features
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex. FMBTA55-H.
(B)
(A)
(C)
Mechanical data
0.063 (1.60)
0.047 (1.20)
0.027 (0.67)
0.013 (0.32)
0.108 (2.75)
0.083 (2.10)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.051 (1.30)
0.035 (0.89)
• Mounting Position : Any
• Weight : Approximated 0.008 gram
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
SYMBOL
UNIT
Vdc
FMBTA55
-60
FMBTA56
-80
VCBO
VCEO
VEBO
IC
Vdc
-60
-80
Vdc
-4.0
Collector Current - continuous
mAdc
-500
Thermal Characteristics
CHARACTERISTIC
CONDITIONS
SYMBOL
PD
UNIT
mW
mW/OC
OC/W
mW
mW/OC
Max
TA = 25OC
225
1.8
Total device dissipation FR-5 board
(1)
Derate above 25OC
Junction to ambient
TA = 25OC
PD
Thermal resistance
RθJA
PD
556
300
2.4
Total device dissipation alumina
substrate(2)
Derate above 25OC
PD
OC/W
Thermal resistance
Operating temperature
Junction to ambient
RθJA
TJ
417
-55 ~ +150
oC
Storage temperature
TSTG
-65 ~ +150
1. FR-5 = 1.0 X 0.75 X0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231164
Issued Date
2010/11/05
Revised Date
2011/07/21
Revision
B
Page.
9
Page 2
Driver Transistor
Formosa MS
FMBTA55 / FMBTA56
Electrical Characteristics (AT TA=25oC unless otherwise noted)
Off Characteristics
PARAMETER
CONDITIONS
Ic = -100µAdc, IE = 0
SYMBOL
V(BR)CBO
Max.
UNIT
Vdc
Min.
Collector-Base breakdown voltage
FMBTA55
-60
-80
-
-
FMBTA56
Collector-Emitter breakdown voltage(3)
FMBTA55
FMBTA56
Ic = -1.0mAdc, IB = 0
V(BR)CEO
-60
-80
-
-
Vdc
V(BR)EBO
ICES
Emitter-Base breakdown voltage
IE = -100µAdc, IC = 0
VCE=-60Vdc, IB=0
Vdc
-4.0
-
-
Collector Cutoff Current
µAdc
-0.1
Collector Cutoff current
FMBTA55
FMBTA56
VCB = -60Vdc, IE = 0
VCB = -80Vdc, IE = 0
-
-
-0.1
-0.1
ICBO
µAdc
On Characteristics
PARAMETER
CONDITIONS
Max.
-
UNIT
-
SYMBOL
hFE
Min.
100
Ic = -10mAdc, VCE = -1.0Vdc
Ic = -100mAdc, VCE = -1.0Vdc
DC current gain
100
-
VCE(sat)
VBE(on)
Vdc
Vdc
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Ic = -100mAdc, IB = -10mAdc
Ic = -100mAdc, VCE = -1.0Vdc
-
-
-0.25
-1.2
Small Signal Characteristics
PARAMETER
CONDITIONS
Max.
-
UNIT
MHz
Min.
50
SYMBOL
fT
Ic = -100mA, VCE = -1.0Vdc,
f=100MHz
Current Gain Bandwidth Product (4)
3. Pulse test: pulse width <=300µs, duty cycle<=2.0%
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231164
Issued Date
2010/11/05
Revised Date
2011/07/21
Revision
B
Page.
9
Page 3
Rating and characteristic curves (FMBTA55/FMBTA56)
FIG.1 Switching Time Test Circuits
TURN-ON TIME
TURN-OFF TIME
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
FIG.3 Capacitance
FIG.2 Current-Gain Bandwidth Product
FIG.4 Switching Time
FIG.5 DC Current Gain
=-40V
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231164
Issued Date
2010/11/05
Revised Date
2011/07/21
Revision
B
Page.
9
Page 4
Rating and characteristic curves (FMBTA55/FMBTA56)
FIG.6 "On" Voltage
FIG.7 Collectpr Saturation Region
FIG.8 Base-Emitter Temperature Coefficient
RθVΒ
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231164
Issued Date
2010/11/05
Revised Date
2011/07/21
Revision
B
Page.
9
Page 5
Driver Transistor
Formosa MS
FMBTA55 / FMBTA56
Pinning information
Pin
Simplified outline
Symbol
C
C
PinB Base
PinC Collector
PinE Emitter
B
E
B
E
Marking
Type number
Marking code
FMBTA55
FMBTA56
2H
2GM
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231164
Issued Date
2010/11/05
Revised Date
2011/07/21
Revision
B
Page.
9
Page 6
Driver Transistor
Formosa MS
FMBTA55 / FMBTA56
Packing information
P0
P1
d
E
F
W
B
A
P
D2
D1
T
C
W1
D
unit:mm
Symbol
SOT-23
Item
Tolerance
Carrier width
A
B
C
d
D
D1
D
D1
D2
E
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.15
2.77
1.22
1.50
-
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
-
178.00
55.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
12.0
F
P
P0
P1
T
W
W1
Reel width
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231164
Issued Date
2010/11/05
Revised Date
2011/07/21
Revision
Page.
B
9
Page 7
Driver Transistor
Formosa MS
FMBTA55 / FMBTA56
Reel packing
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
CARTON
SIZE
(m/m)
COMPONENT
SPACING
APPROX.
BOX
(pcs)
PACKAGE
SOT-23
REEL SIZE
7"
REEL
(pcs)
GROSS WEIGHT
(kg)
CARTON
(pcs)
(m/m)
3,000
4.0
30,000
183*183*123
178
382*262*387
240,000
11.6
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5oC~40oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
TL
Ramp-up
TL
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t25oC to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(TL to TP)
<3oC/sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(ts)
150oC
200oC
60~120sec
Tsmax to TL
-Ramp-upRate
<3oC/sec
Time maintained above:
-Temperature(TL)
-Time(tL)
217oC
60~260sec
Peak Temperature(TP)
255oC-0/+5oC
Time within 5oC of actual Peak
Temperature(tP)
10~30sec
Ramp-down Rate
<6oC/sec
Time 25oC to Peak Temperature
<6minutes
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231164
Issued Date
2010/11/05
Revised Date
2011/07/21
Revision
B
Page.
9
Page 8
Driver Transistor
Formosa MS
FMBTA55 / FMBTA56
High reliability test capabilities
Item Test
Conditions
1. Steady State Operating Life
TA=25°C PD=225mW Test Duration:1000hrs
2. High Temperature Reverse Bias
3. Temperature Cycle
4. Autoclave
Tj=150℃,VCE=80% related volage,Test Duration:1000hrs
-55℃(15min) to 150℃(15min)Air to Air Transition Time<20sec Test Cycles:1000cycle
P=2atm Ta=121℃ RH=100% Test Duration:96hrs
5. High Temperature Storage Life
6. Solderability
Ta=150℃ Test Duration:1000hrs
245℃,Test Duration:5sec
7. High Temperature High Humidity Reverse
Bias
Ta=85℃, 85%RH, VCE=80% related volage,Test Duration:1000hrs
260℃,Test Duration:10sec
8. Resistance to Soldering Heat
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231164
Issued Date
2010/11/05
Revised Date
2011/07/21
Revision
B
Page.
9
Page 9
相关型号：
©2020 ICPDF网 联系我们和版权申明