MRA4002T3 [FORMOSA]
Chip Silicon Rectifier - Glass passivated type; 芯片硅整流 - 玻璃钝化型
| 型号： | MRA4002T3 |
| 厂家： | 
FORMOSA MS |
| 描述： | Chip Silicon Rectifier - Glass passivated type |
| 文件： | 总2页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Chip Silicon Rectifier
Formosa MS
MRA4001T3 THRU MRA4007T3
Glass passivated type
Features
SMA-L
Plastic package has Underwriters Laboratory
FlammabilityClassification 94V-O Utilizing Flame
RetardantEpoxy Molding Compound.
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
For surface mounted applications.
0.110(2.8)
0.094(2.4)
Exceeds environmental standards of MIL-S-19500 /
228
0.181(4.6)
0.165(4.2)
Low leakage current.
0.075(1.9)
0.067(1.7)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Dimensions in inches and (millimeters)
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
IO
MIN.
TYP.
MAX.
1.0
UNIT
A
Forward rectified current
See Fig.2
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Forward surge current
IFSM
30
A
o
VR = VRRM TA = 25 C
5.0
50
uA
uA
Reverse current
IR
o
VR = VRRM TA = 100 C
o
Thermal resistance
Junction to ambient
RqJA
CJ
50
15
C / w
pF
Diode junction capacitance
Storage temperature
f=1MHz and applied 4vDC reverse voltage
o
TSTG
-55
+150
C
Operating
*1
*2
*3
*4
MARKING
VRRM
VRMS
VR
VF
temperature
SYMBOLS
CODE
o
( C)
(V)
50
(V)
(V)
(V)
MRA4001T3
MRA4002T3
MRA4003T3
MRA4004T3
MRA4005T3
MRA4006T3
MRA4007T3
A1
A2
A3
A4
A5
A6
A7
35
70
50
100
200
400
600
800
1000
100
200
400
600
800
1000
140
280
420
560
700
*1 Repetitive peak reverse voltage
*2 RMS voltage
1.1
-55 to +150
*3 Continuous reverse voltage
*4 Maximum forward voltage
RATINGAND CHARACTERISTIC CURVES (MRA4001T3 THRU MRA4007T3)
FIG.1-TYPICAL FORWARD
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
CHARACTERISTICS
1.2
1.0
0.8
50
10
3.0
1.0
Single Phase
0.6
Half Wave 60Hz
Resistive Or Inductive Load
0.4
0.2
0
0
20
40
60
80
100
120
140
160
180
200
Tj=25 C
AMBIENT TEMPERATURE ( C)
Pulse Width 300us
1% Duty Cycle
0.1
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
.01
.6
.7
.8
.9
1.0 1.1 1.2 1.3
40
30
20
10
0
FORWARD VOLTAGE,(V)
8.3ms Single Half
Tj=25 C
Sine Wave
JEDEC method
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS
50
1
5
10
100
100
NUMBER OF CYCLES AT 60Hz
FIG.5-TYPICAL JUNCTION CAPACITANCE
10
1.0
.1
35
Tj=100 C
30
25
20
15
10
5
Tj=25 C
0
.01
.01
.05
.1
.5
1
5
10
50
100
0
20 40 60 80 100 120 140
REVERSE VOLTAGE,(V)
PERCENTAGE RATED PEAK REVERSE VOLTAGE
相关型号：
©2020 ICPDF网 联系我们和版权申明