RB521S_10 [FORMOSA]

200mA Surface Mount Small Signal Schottky Diodes-30V; 200毫安表面贴装小信号肖特基二极管, 30V
RB521S_10
型号: RB521S_10
厂家: FORMOSA MS    FORMOSA MS
描述:

200mA Surface Mount Small Signal Schottky Diodes-30V
200毫安表面贴装小信号肖特基二极管, 30V

小信号肖特基二极管
文件: 总7页 (文件大小:110K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Small Signal Schottky Diode  
Formosa MS  
RB521S  
List  
1
2
2
2
2
3
4
4
4
5
6
6
7
List.................................................................................................  
Package outline...............................................................................  
Features..........................................................................................  
Mechanical data...............................................................................  
Maximum ratings .............................................................................  
Rating and characteristic curves........................................................  
Pinning information...........................................................................  
Marking...........................................................................................  
Suggested solder pad layout.............................................................  
Packing information..........................................................................  
Reel packing....................................................................................  
Suggested thermal profiles for soldering processes.............................  
High reliability test capabilities...........................................................  
http://www.formosams.com/  
TEL:886-2-22696661  
FAX:886-2-22696141  
Document ID  
DS-221662  
Issued Date  
2008/02/10  
Revised Date  
2010/05/10  
Revision  
B
Page.  
7
Page 1  
Small Signal Schottky Diode  
Formosa MS  
RB521S  
200mA Surface Mount Small Signal  
Schottky Diodes-30V  
Package outline  
Features  
SOD-523FL  
Low current rectification and high speed switching.  
Extremely small surface mount type.  
Up to 200mA current capability.  
0.051(1.30)  
0.043(1.10)  
Low forward voltage drop (VF = 0.5V typ. @200mA)  
Silicon epitaxial planar chip, metal silicon junction.  
Lead-free parts meet exceeds environmental  
standards of MIL-STD-19500 /228  
Suffix "-H" indicates Halogen-free parts, ex. RB521S-H.  
0.028(0.70)  
0.020(0.50)  
Mechanical data  
0.067(1.70)  
0.059(1.50)  
Epoxy:UL94-V0 rated flame retardant  
Case : Molded plastic, SOD-523FL  
Terminals : Solder plated, solderable per  
MIL-STD-750, Method 2026  
Dimensions in inches and (millimeters)  
Polarity : Indicated by cathode band  
Mounting Position : Any  
Weight : Approximated 0.002 gram  
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)  
PARAMETER  
Repetitive peak reverse voltage  
Continuous reverse voltage  
Mean rectifying current  
CONDITIONS  
Symbol MIN. TYP. MAX. UNIT  
VRM  
VR  
IO  
30  
30  
V
V
200  
mA  
IFSM  
Forward surge current  
1000  
mA  
60Hz for 1cycle  
oC  
oC  
Operating temperature  
Storage temperature  
TJ  
-40  
-40  
+125  
+125  
TSTG  
Forward voltage  
Reverse current  
Diode capacitance  
IF = 200 mA  
VF  
IR  
0.50  
30  
V
VR = 10 V  
uA  
pF  
4.0  
CT  
VR = 10 V, f = 1MHz  
http://www.formosams.com/  
TEL:886-2-22696661  
FAX:886-2-22696141  
Document ID  
DS-221662  
Issued Date  
2008/02/10  
Revised Date  
2010/05/10  
Revision  
B
Page.  
7
Page 2  
Rating and characteristic curves (RB521S)  
FIG.2 - TYPICAL REVERSE  
FIG.1-TYPICAL FORWARD  
CHARACTERISTICS  
CHARACTERISTICS  
1000mA  
100mA  
10mA  
1mA  
1mA  
Ta=125oC  
Ta=75oC  
100uA  
10uA  
1uA  
Ta=25oC  
Ta=-25oC  
100uA  
10uA  
100nA  
10nA0  
5
10  
REVERSE VOLTAGE,(V)  
15  
20  
25  
30  
35  
1uA  
0
0.1 0.2  
0.3 0.4 0.5 0.6 0.7  
FORWARD VOLTAGE,(V)  
FIG.4- DERATING CURVE  
FIG.3-TYPICAL TERMINALS CAPACITANCE  
100  
f=1MHz  
10  
1
0
5
10  
15  
20  
25  
30  
35  
REVERSE VOLTAGE,(V)  
AMBIENT TEMPERATURE,(°C)  
(mounting on glass epoxy PCBs)  
http://www.formosams.com/  
TEL:886-2-22696661  
FAX:886-2-22696141  
Document ID  
DS-221662  
Issued Date  
2008/02/10  
Revised Date  
2010/05/10  
Revision  
B
Page.  
7
Page 3  
Small Signal Schottky Diode  
Formosa MS  
RB521S  
Pinning information  
Pin  
Simplified outline  
Symbol  
Pin1 cathode  
Pin2 anode  
1
2
1
2
Marking  
Type number  
RB521S  
Marking code  
C
Suggested solder pad layout  
C
A
B
Dimensions in inches and (millimeters)  
PACKAGE  
A
B
C
SOD-523FL  
0.032 (0.80)  
0.024 (0.60)  
0.044 (1.10)  
http://www.formosams.com/  
TEL:886-2-22696661  
FAX:886-2-22696141  
Document ID  
DS-221662  
Issued Date  
2008/02/10  
Revised Date  
2010/05/10  
Revision  
B
Page.  
7
Page 4  
Small Signal Schottky Diode  
Formosa MS  
RB521S  
Packing information  
P0  
P1  
d
E
F
W
B
A
P
D2  
D1  
T
C
W1  
D
unit:mm  
Symbol  
SOD-523FL  
Item  
Tolerance  
Carrier width  
Carrier length  
Carrier depth  
Sprocket hole  
A
B
C
d
0.1  
0.1  
0.1  
0.1  
0.90  
1.94  
0.76  
1.50  
7" Reel outside diameter  
7" Reel inner diameter  
Feed hole diameter  
Sprocket hole position  
Punch hole position  
Punch hole pitch  
Sprocket hole pitch  
Embossment center  
Overall tape thickness  
Tape width  
D
2.0  
min  
0.2  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.3  
1.0  
178.00  
50.00  
13.00  
1.75  
3.50  
2.00  
4.00  
2.00  
0.23  
8.00  
D1  
D2  
E
F
P
P0  
P1  
T
W
W1  
Reel width  
9.50  
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.  
http://www.formosams.com/  
TEL:886-2-22696661  
FAX:886-2-22696141  
Document ID  
DS-221662  
Issued Date  
2008/02/10  
Revised Date  
2010/05/10  
Revision  
Page.  
7
B
Page 5  
Small Signal Schottky Diode  
Formosa MS  
RB521S  
Reel packing  
COMPONENT  
INNER  
BOX  
(m/m)  
REEL  
DIA,  
(m/m)  
CARTON  
SIZE  
(m/m)  
APPROX.  
PACKAGE REEL SIZE REEL  
(pcs)  
SPACING  
(m/m)  
BOX  
(pcs)  
CARTON GROSS WEIGHT  
(pcs)  
(kg)  
SOD-523FL  
7"  
3,000  
4.0  
178  
30,000 183*183*123  
382*262*387 240,000  
9.5  
Suggested thermal profiles for soldering processes  
1.Storage environment: Temperature=5oC~40oC Humidity=55%±25%  
2.Reflow soldering of surface-mount devices  
Critical Zone  
TL to TP  
Tp  
TP  
Ramp-up  
TL  
TL  
Tsmax  
Tsmin  
tS  
Preheat  
Ramp-down  
25  
t25oC to Peak  
Time  
3.Reflow soldering  
Profile Feature  
Soldering Condition  
Average ramp-up rate(TL to TP)  
<3oC/sec  
Preheat  
-Temperature Min(Tsmin)  
-Temperature Max(Tsmax)  
-Time(min to max)(ts)  
150oC  
200oC  
60~120sec  
Tsmax to TL  
-Ramp-upRate  
<3oC/sec  
Time maintained above:  
-Temperature(TL)  
-Time(tL)  
217oC  
60~260sec  
Peak Temperature(TP)  
255oC-0/+5oC  
Time within 5oC of actual Peak  
Temperature(tP)  
10~30sec  
Ramp-down Rate  
<6oC/sec  
Time 25oC to Peak Temperature  
<6minutes  
http://www.formosams.com/  
TEL:886-2-22696661  
FAX:886-2-22696141  
Document ID  
DS-221662  
Issued Date  
2008/02/10  
Revised Date  
2010/05/10  
Revision  
B
Page.  
7
Page 6  
Small Signal Schottky Diode  
Formosa MS  
RB521S  
High reliability test capabilities  
Item Test  
1. Solder Resistance  
Conditions  
Reference  
MIL-STD-750D  
METHOD-2031  
at 260±5OC for 10±2sec.  
immerse body into solder 1/16"±1/32"  
at 245±5OC for 5 sec.  
2. Solderability  
MIL-STD-202F  
METHOD-208  
VR=80% rate at TJ=125OC for 168 hrs.  
Rated average rectifier current at TA=25OC for 500hrs.  
3. High Temperature Reverse Bias  
4. Forward Operation Life  
5. Intermittent Operation Life  
6. Pressure Cooker  
MIL-STD-750D  
METHOD-1038  
MIL-STD-750D  
METHOD-1027  
TA = 25OC, IF = IO  
On state: power on for 5 min.  
off state: power off for 5 min.  
on and off for 500 cycles.  
MIL-STD-750D  
METHOD-1036  
JESD22-A102  
15PSIG at TA=121OC for 4 hrs.  
-55OC to +125OC dwelled for 30 min.  
7. Temperature Cycling  
8. Thermal Shock  
MIL-STD-750D  
METHOD-1051  
and transferred for 5min. total 10 cycles.  
0OC for 5 min. rise to 100OC for 5 min. total 10 cycles.  
60Hz for 1cycle  
MIL-STD-750D  
METHOD-1056  
9. Forward Surge  
MIL-STD-750D  
METHOD-4066-2  
at TA=85OC, RH=85% for 1000hrs.  
at 175OC for 1000 hrs.  
10. Humidity  
MIL-STD-750D  
METHOD-1021  
11. High Temperature Storage Life  
MIL-STD-750D  
METHOD-1031  
http://www.formosams.com/  
TEL:886-2-22696661  
FAX:886-2-22696141  
Document ID  
DS-221662  
Issued Date  
2008/02/10  
Revised Date  
2010/05/10  
Revision  
B
Page.  
7
Page 7  

相关型号:

RB521VM-30

RB521VM-30是超低VF的小电流整流用途的肖特基势垒二极管。
ROHM

RB521VM-30FH

RB521VM-30FH是低VF的小电流整流用肖特基势垒二极管。
ROHM

RB521VM-40

RB521VM-40是低VF的小电流整流用途的肖特基势垒二极管。
ROHM

RB521VM-40FH

RB521VM-40FH是低VF的小电流整流用肖特基势垒二极管。
ROHM

RB521VM-40FHTE-17

Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM), Silicon, SC-90A, 2 PIN
ROHM

RB521ZS-30

Schottky Barrier Diode
ROHM

RB521ZS-30T2R

Schottky Barrier Diode
ROHM

RB521ZS-30_1

Schottky Barrier Diode
ROHM

RB521ZS8A30

Schottky Barrier Diodes
ROHM

RB521ZS8A30TE61

Rectifier Diode, Schottky, 4 Element, 0.1A, 30V V(RRM), Silicon, DFN1608-8, 8 PIN
ROHM

RB522ES-30

RB522ES-30是超小型封装(0603尺寸)的肖特基势垒二极管。
ROHM

RB522ES-30T15R

Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon,
ROHM