SK52-B [FORMOSA]
Chip Schottky Barrier Diodes - Silicon epitaxial planer type; 芯片肖特基势垒二极管 - 硅外延平面型
| 型号： | SK52-B |
| 厂家： | 
FORMOSA MS |
| 描述： | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 文件： | 总2页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Chip Schottky Barrier Diodes
Formosa MS
SK52-B THRU SK510-B
Silicon epitaxial planer type
Features
SMB
Plastic package has Underwriters Laboratory
FlammabilityClassification 94V-O Utilizing Flame
RetardantEpoxy Molding Compound.
0.213(5.4)
0.197(5.0)
0.016(0.4) Typ.
For surface mounted applications.
0.142(3.6)
0.126(3.2)
Exceeds environmental standards of MIL-S-19500 /
228
0.173(4.4)
0.157(4.0)
Low leakage current.
0.075(1.9)
0.067(1.7)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Dimensions in inches and (millimeters)
Case : Molded plastic, JEDECDO-214AA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.00878 ounce, 0.293 gram
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
IO
MIN.
TYP.
MAX.
5.0
UNIT
A
Forward rectified current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Forward surge current
IFSM
150
A
o
VR = VRRM TA = 25 C
1
mA
mA
Reverse current
IR
o
VR = VRRM TA = 125 C
50
o
Thermal resistance
Junction to lead
RqJL
CJ
12
C / w
pF
Diode junction capacitance
Storage temperature
f=1MHz and applied 4vDC reverse voltage
380
o
TSTG
-55
+150
C
Operating
*1
*2
*3
*4
MARKING
VRRM
VRMS
VR
VF
temperature
SYMBOLS
CODE
o
( C)
(V)
(V)
(V)
(V)
SK52-B
SK53-B
SK54-B
SK55-B
SK56-B
SK58-B
SK510-B
SS52
SS53
SS54
SS55
SS56
SS58
S510
20
30
40
50
60
80
14
21
28
35
42
56
70
20
30
40
50
60
80
100
0.50
-55 to +125
*1 Repetitive peak reverse voltage
*2 RMS voltage
0.70
-55 to +150
*3 Continuous reverse voltage
*4 Maximum forward voltage
0.85
100
RATINGAND CHARACTERISTIC CURVES (SK52B THRU SK510B)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
6.0
5.0
4.0
3.0
50
10
3.0
1.0
2.0
1.0
0
0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
120
.01
.1
.3
.5
.7
.9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
90
8.3ms Single Half
Sine Wave
Tj=25 C
60
JEDEC method
30
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
0
50
1
5
10
100
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
10
1400
1200
1000
800
600
400
200
0
Tj=75 C
1.0
.1
Tj=25 C
.01
.01
.05
.1
.5
1
5
10
50
100
0
20 40 60 80 100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
相关型号：
SK52-T3-LF
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 20V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
WTE
SK52-TP
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 20V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, HSMC, 2 PIN
MCC
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