SL24 [FORMOSA]

Silicon epitaxial planer type; 硅外延平面型
SL24
型号: SL24
厂家: FORMOSA MS    FORMOSA MS
描述:

Silicon epitaxial planer type
硅外延平面型

二极管 光电二极管 瞄准线 功效
文件: 总2页 (文件大小:71K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Low VF Chip Schottky Barrier Diodes  
Formosa MS  
SL22 AND SL24  
Silicon epitaxial planer type  
Features  
SMA  
Plastic package has Underwriters Laboratory  
FlammabilityClassification 94V-O Utilizing Flame  
RetardantEpoxy Molding Compound.  
0.185(4.8)  
0.177(4.4)  
0.012(0.3) Typ.  
For surface mounted applications.  
0.110(2.8)  
0.094(2.4)  
Exceeds environmental standards of MIL-S-19500 /  
228  
0.165(4.2)  
0.150(3.8)  
Low leakage current.  
0.067(1.7)  
0.060(1.5)  
0.040(1.0) Typ.  
0.040 (1.0) Typ.  
Dimensions in inches and (millimeters)  
Mechanical data  
Case : Molded plastic, JEDECDO-214AC  
Terminals : Solder plated, solderable per MIL-STD-750,  
Method 2026  
Polarity : Indicated by c athode band  
Mounting Position : Any  
Weight : 0.0015 ounce, 0.05 gram  
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)  
PARAMETER  
CONDITIONS  
Symbol  
IO  
MIN.  
TYP.  
MAX.  
2.0  
UNIT  
A
Forward rectified current  
See Fig.2  
8.3ms single half sine-wave superimposed on  
rate load (JEDEC methode)  
Forward surge current  
IFSM  
50  
A
o
VR = VRRM TA = 25 C  
1.0  
10  
mA  
mA  
Reverse current  
IR  
o
VR = VRRM TA = 100 C  
o
Thermal resistance  
Junction to ambient  
Rq  
70  
C / w  
pF  
JA  
Diode junction capacitance  
Storage temperature  
f=1MHz and applied 4vDC reverse voltage  
CJ  
160  
o
TSTG  
-55  
+150  
C
Operating  
*1  
*2  
*3  
*4  
MARKING  
SYMBOLS  
VRRM  
VRMS  
VR  
VF  
temperature  
CODE  
o
( C)  
*1 Repetitive peak reverse voltage  
*2 RMS voltage  
(V)  
(V)  
(V)  
(V)  
SL22  
SL24  
SL22  
SL24  
20  
40  
14  
28  
20  
40  
0.38  
0.40  
-55 to +125  
*3 Continuous reverse voltage  
*4 Maximum forward voltage  
RATINGAND CHARACTERISTIC CURVES (SL22 AND SL24)  
FIG.1-TYPICAL FORWARD  
CHARACTERISTICS  
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE  
2.4  
2.0  
1.6  
1.2  
50  
10  
3.0  
1.0  
Single Phase  
Half Wave 60Hz  
Resistive Or Inductive Load  
0.8  
0.4  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
100  
100  
Tj=25 C  
AMBIENT TEMPERATURE ( C)  
Pulse Width 300us  
1% Duty Cycle  
0.1  
FIG.4-MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
50  
40  
30  
.01  
.1  
.3  
.5  
.7  
.9 1.1 1.3 1.5  
FORWARD VOLTAGE,(V)  
8.3ms Single Half  
Tj=25 C  
Sine Wave  
20  
JEDEC method  
10  
FIG.3 - TYPICAL REVERSE  
CHARACTERISTICS  
0
50  
1
5
10  
100  
NUMBER OF CYCLES AT 60Hz  
FIG.5-TYPICAL JUNCTION CAPACITANCE  
10  
1.0  
.1  
350  
300  
250  
200  
Tj=75 C  
150  
100  
50  
Tj=25 C  
0
.01  
.01  
.05  
.1  
.5  
1
5
10  
50  
0
20 40 60 80 100 120 140  
REVERSE VOLTAGE,(V)  
PERCENTAGE RATED PEAK REVERSE VOLTAGE  

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