SL32 [FORMOSA]
Silicon epitaxial planer type; 硅外延平面型
| 型号： | SL32 |
| 厂家： | 
FORMOSA MS |
| 描述： | Silicon epitaxial planer type |
| 文件： | 总2页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low VF Chip Schottky Barrier Diodes
Formosa MS
SL32 AND SL34
Silicon epitaxial planer type
Features
SMC
Plastic package has Underwriters Laboratory
FlammabilityClassification 94V-O Utilizing Flame
RetardantEpoxy Molding Compound.
0.276(7.0)
0.260(6.6)
0.012(0.3) Typ.
For surface mounted applications.
0.152(3.8)
0.144(3.6)
0.189(4.8)
0.173(4.4)
Exceeds environmental standards of MIL-S-19500 /
228
0.244(6.2)
0.228(5.8)
Low leakage current.
0.087(2.2)
0.071(1.8)
0.032(0.8) Typ.
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Dimensions in inches and (millimeters)
Case : Molded plastic, JEDECDO-214AB
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.00585 ounce, 0.195 gram
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
IO
MIN.
TYP.
MAX.
3.0
UNIT
A
Forward rectified current
See Fig.2
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Forward surge current
IFSM
80
A
o
VR = VRRM TA = 25 C
1.0
10
mA
mA
Reverse current
IR
o
VR = VRRM TA = 100 C
o
Thermal resistance
Junction to ambient
Rq
50
C / w
pF
JA
Diode junction capacitance
Storage temperature
f=1MHz and applied 4vDC reverse voltage
CJ
300
o
TSTG
-55
+150
C
Operating
*1
*2
*3
*4
MARKING
SYMBOLS
VRRM
VRMS
VR
VF
temperature
CODE
o
*1 Repetitive peak reverse voltage
*2 RMS voltage
(V)
(V)
(V)
(V)
(
C)
SL32
SL34
SL32
SL34
20
40
14
28
20
40
0.38
0.40
-55 to +125
*3 Continuous reverse voltage
*4 Maximum forward voltage
RATINGAND CHARACTERISTIC CURVES (SL32 AND SL34)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
1.2
3.0
2.4
1.8
50
10
3.0
1.0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
1.2
0.6
0
0
20
40
60
80
100
120
140
160
180
200
100
100
Tj=25 C
AMBIENT TEMPERATURE ( C)
Pulse Width 300us
1% Duty Cycle
0.1
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
.01
.1
.3
.5
.7
.9 1.1 1.3 1.5
80
FORWARD VOLTAGE,(V)
60
8.3ms Single Half
Tj=25 C
Sine Wave
40
JEDEC method
20
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS
0
50
1
5
10
100
NUMBER OF CYCLES AT 60Hz
FIG.5-TYPICAL JUNCTION CAPACITANCE
10
1.0
.1
700
600
500
400
Tj=75 C
300
200
100
0
Tj=25 C
.01
.01
.05
.1
.5
1
5
10
50
0
20 40 60 80 100 120 140
REVERSE VOLTAGE,(V)
PERCENTAGE RATED PEAK REVERSE VOLTAGE
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