A04T-5 [FREESCALE]
RF Power Field Effect Transistor; 射频功率场效应晶体管
| 型号： | A04T-5 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistor |
| 文件： | 总15页 (文件大小：569K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRFE6S9045N
Rev. 0, 10/2007
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
MRFE6S9045NR1
Designed for broadband commercial and industrial applications with fre-
quencies up to 1000 MHz. The high gain and broadband performance of this
device makes it ideal for large-signal, common-source amplifier applications
in 28 volt base station equipment.
• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts,
880 MHz, 10 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
BROADBAND
I
DQ = 350 mA, Pout = 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 22.1 dB
Drain Efficiency — 32%
RF POWER MOSFET
ACPR @ 750 kHz Offset — -46 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA,
P
out = 16 Watts Avg., Full Frequency Band (920-960 MHz)
Power Gain — 20 dB
CASE 1265-09, STYLE 1
TO-270-2
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 1.5% rms
PLASTIC
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts,
Full Frequency Band (920-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 68%
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
- 0.5, +66
- 0.5, +12
32, +0
Unit
Vdc
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
GS
DD
Maximum Operation Voltage
Storage Temperature Range
Case Operating Temperature
V
T
stg
- 65 to +150
150
T
°C
C
(1,2)
Operating Junction Temperature
T
225
°C
J
Table 2. Thermal Characteristics
Characteristic
(2,3)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 45 W CW
Case Temperature 79°C, 10 W CW
R
θ
JC
°C/W
1.0
1.1
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
3A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 66 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
10
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 200 μA)
V
V
1
2
3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 350 mAdc, Measured in Functional Test)
2.3
3.1
3.8
0.3
DD
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 1.0 Adc)
V
0.05
0.23
GS
D
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
1.02
27
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
81
iss
(V = 28 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 350 mA, P = 10 W Avg., f = 880 MHz, Single-Carrier
out
DD
DQ
N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB
@ 0.01% Probability on CCDF
Power Gain
G
21
30.5
—
22.1
32
25
—
dB
%
ps
Drain Efficiency
η
D
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
-46
-19
-44
-9
dBc
dB
—
(continued)
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 920-960 MHz, 50 ohm system) V = 28 Vdc,
DD
I
= 350 mA, P = 16 W Avg., f = 920-960 MHz, GSM EDGE Signal
out
DQ
Power Gain
G
—
—
—
—
—
20
46
—
—
—
—
—
dB
%
ps
Drain Efficiency
η
D
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
EVM
SR1
SR2
1.5
-62
-78
%
dBc
dBc
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 920-960 MHz, 50 ohm system) V = 28 Vdc, I = 350 mA,
DD
DQ
P
= 45 W, f = 920-960 MHz
out
Power Gain
G
—
—
—
—
20
—
dB
%
ps
Drain Efficiency
Input Return Loss
η
68
-12
52
—
—
—
D
IRL
dB
W
P
@ 1 dB Compression Point
P1dB
out
(f = 940 MHz)
Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 350 mA, 865-900 MHz Bandwidth
DD
DQ
Video Bandwidth @ 48 W PEP P where IM3 = -30 dBc
VBW
MHz
out
(Tone Spacing from 100 kHz to VBW)
—
10
—
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 35 MHz Bandwidth @ P = 10 W Avg.
G
—
—
0.72
—
—
dB
out
F
Gain Variation over Temperature
ΔG
0.011
dB/°C
(-30°C to +85°C)
Output Power Variation over Temperature
ΔP1dB
—
0.006
—
dBm/°C
(-30°C to +85°C)
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
3
B2
B1
R3
V
SUPPLY
+
+
+
R1
V
C10
C16
C17
C18
L2
BIAS
+
R2
C15
C7
L1
Z7
C8
Z11
RF
OUTPUT
Z16
Z10
Z12
Z13
Z14
C12
Z15
RF
INPUT
C5
C6
Z1
Z2 Z3 Z4
Z5
Z6
Z8
Z9
C14
C9
C11
C13
C1
DUT
C2
C3
C4
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.215″ x 0.065″ Microstrip
0.221″ x 0.065″ Microstrip
0.500″ x 0.100″ Microstrip
0.460″ x 0.270″ Microstrip
0.040″ x 0.270″ Microstrip
0.280″ x 0.270″ x 0.530″ Taper
0.087″ x 0.525″ Microstrip
0.435″ x 0.525″ Microstrip
0.057″ x 0.525″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
0.360″ x 0.270″ Microstrip
0.063″ x 0.270″ Microstrip
0.360″ x 0.065″ Microstrip
0.095″ x 0.065″ Microstrip
0.800″ x 0.065″ Microstrip
0.260″ x 0.065″ Microstrip
0.325″ x 0.065″ Microstrip
PCB
Taconic RF-35 0.030″, ε = 3.5
r
Figure 1. MRFE6S9045NR1 Test Circuit Schematic
Table 6. MRFE6S9045NR1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
Fair Rite
B1
B2
Ferrite Bead
Ferrite Bead
2743019447
2743021447
Fair Rite
ATC
C1, C7, C10, C14
47 pF Chip Capacitors
ATC100B470JT500XT
27291SL
C2, C4, C12
C3
0.8-8.0 pF Variable Capacitors, Gigatrim
15 pF Chip Capacitor
Johanson
ATC
ATC100B150JT500XT
ATC100B120JT500XT
ATC100B130JT500XT
ATC100B7R5JT500XT
27271SL
C5, C6
C8, C9
C11
12 pF Chip Capacitors
ATC
13 pF Chip Capacitors
ATC
7.5 pF Chip Capacitor
ATC
C13
0.6-4.5 pF Variable Capacitor, Gigatrim
10 μF, 35 V Tantalum Capacitors
220 μF, 50 V Electrolytic Capacitor
12.5 nH Inductors
Johanson
Kemet
C15, C16, C17
C18
T491D106K035AT
EMVY500ADA221MJA0G
A04T-5
Nippon Chemi-con
Coilcraft
Vishay
L1, L2
R1
1 kΩ, 1/4 W Chip Resistor
560 kΩ, 1/4 W Chip Resistor
12 Ω, 1/4 W Chip Resistor
CRCW12061001FKEA
CRCW120656001FKEA
CRCW120612R0FKEA
R2
Vishay
R3
Vishay
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
4
C15
R2
C18
R3
B1
V
DD
R1
C16 C17
V
GG
B2
C7
C10
L2
C5
L1
C8
C2
C4
C14
C1
C3
C6
C11
C13
C9
C12
TO−270/272
Surface /
Bolt down
Figure 2. MRFE6S9045NR1 Test Circuit Component Layout
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
23
22
21
34
32
30
η
D
G
ps
V
P
= 28 Vdc
= 10 W (Avg.) I = 350 mA
DD
out
20
19
DQ
−30
−40
0
IRL
N−CDMA IS−95 Pilot Sync, Paging
Traffic Codes 8 Through 13
−5
−10
18
17
−50
−60
ACPR
−15
−20
ALT1
840
16
−70
800
820
860
880
900
920
940 960
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ Pout = 10 Watts Avg.
23
22
50
40
η
D
G
ps
21
20
30
V
= 28 Vdc, P = 20 W (Avg.)
DD out
= 350 mA, N−CDMA IS−95 Pilot
−20
−30
−40
−50
−60
−70
I
DQ
Sync, Paging, Traffic Codes 8
Through 13
19
18
ACPR
0
17
16
15
−5
−10
−15
ALT1
IRL
800
820
840
860
880
900
920
940 960
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ Pout = 20 Watts Avg.
24
23
22
21
20
19
18
−10
I
= 525 mA
V
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
DD
Two−Tone Measurements
DQ
437.5 mA
−20
−30
−40
350 mA
262.5 mA
175 mA
I
= 175 mA
DQ
262.5 mA
350 mA
−50
−60
V
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
DD
525 mA
437.5 mA
10
17
1
10
100
200
1
100
200
P
, OUTPUT POWER (WATTS) PEP
out
P
, OUTPUT POWER (WATTS) PEP
out
Figure 6. Third Order Intermodulation Distortion
versus Output Power
Figure 5. Two-Tone Power Gain versus
Output Power
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
−10
−20
−30
−40
−50
−60
−70
−80
0
V
= 28 Vdc, P = 48 W (PEP), I = 350 mA
out DQ
Two−Tone Measurements
DD
V
= 28 Vdc, I = 350 mA, f1 = 880 MHz
DQ
f2 = 880.1 MHz, Two−Tone Measurements
DD
−10
−20
−30
−40
(f1 + f2)/2 = Center Frequency of 880 MHz
IM3−L
IM3−U
3rd Order
5th Order
IM5−L
IM7−U
IM7−L
−50
−60
−70
IM5−U
7th Order
1
10
, OUTPUT POWER (WATTS) PEP
100
200
1
10
100
P
TWO−TONE SPACING (MHz)
out
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
56
55
Ideal
P6dB = 49.21 dBm (83.36 W)
54
53
P3dB = 48.40 dBm (69.18 W)
52
51
50
49
48
47
46
P1dB = 47.38 dBm
(54.7 W)
Actual
= 28 Vdc, I = 350 mA, Pulsed CW
V
DD
DQ
12 μsec(on), 1% Duty Cycle, f = 880 MHz
24
25
26
27
28
29
30
31
32
33
34
P , INPUT POWER (dBm)
in
Figure 9. Pulsed CW Output Power versus
Input Power
70
65
60
55
50
45
40
35
30
25
20
15
10
5
−5
−30_C
V
= 28 Vdc, I = 350 mA
DQ
−10
−15
−20
DD
25_C
f = 880 MHz, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8
Through 13
85_C
25_C
−25
−30
−35
−40
85_C
−30_C
25_C
85_C
−30_C −45
ACPR
G
−50
ps
T = −30_C
C
−55
−60
−65
−70
85_C
η
D
25_C
ALT1
10
0
−75
100
1
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
23
80
70
60
50
40
23
22
21
20
19
18
T = −30_C
−30_C
85_C
C
I
= 350 mA
f = 880 MHz
DQ
25_C
22
21
20
19
18
17
16
15
25_C
85_C
G
ps
30
20
10
0
V
= 28 Vdc
= 350 mA
DD
η
D
I
DQ
f = 880 MHz
28 V
32 V
80
V
= 24 V
DD
0
20
40
60
100
1
10
, OUTPUT POWER (WATTS) CW
100
P
, OUTPUT POWER (WATTS) CW
out
P
out
Figure 12. Power Gain versus Output Power
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
8
10
7
10
6
10
5
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device is
operated at V = 28 Vdc, P = 10 W Avg., and η = 32%.
DD
out
D
MTTF calculator available at http:/www.freescale.com/rf. Select Tools
(Software & Tools)/Calculators to access MTTF calculators by product.
Figure 13. MTTF versus Junction Temperature
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
8
N-CDMA TEST SIGNAL
100
10
−10
−20
−30
1.2288 MHz
Channel BW
.
.
.
.
.
.
.
. .
..
. .
... .. . .
.. ..
.
.. . .. ..
.
. .
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.
. .
. . . .
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. .
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1
.
−40
−50
−60
−70
−80
.
.
.
.
.
.
.
.
.
.
.
.
−ALT1 in 30 kHz
Integrated BW
+ALT1 in 30 kHz
Integrated BW
.
.
.
0.1
0.01
.
.
.
..
.
.
.
.
.
.
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
..
.
.
. .
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. .
. ..
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..
.. ..
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... .
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0.001
...
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..
.. .
.
..
.
−ACPR in 30 kHz +ACPR in 30 kHz
Integrated BW Integrated BW
.
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. .
. .
.
..
..
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. .
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.....
. ..
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−90 .
. .
.
0.0001
0
2
4
6
8
10
−100
PEAK−TO−AVERAGE (dB)
−110
−3.6 −2.9 −2.2 −1.5 −0.7
Figure 14. Single-Carrier CCDF N-CDMA
0
0.7 1.5
2.2 2.9 3.6
f, FREQUENCY (MHz)
Figure 15. Single-Carrier N-CDMA Spectrum
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
9
Z = 5 Ω
o
f = 910 MHz
f = 850 MHz
Z
source
Z
load
f = 910 MHz
f = 850 MHz
V
= 28 Vdc, I = 350 mA, P = 10 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
850
865
880
0.42 + j0.30
0.42 + j0.44
0.45 + j0.60
3.05 + j1.27
3.16 + j1.33
3.31 + j1.33
895
910
0.48 + j0.74
0.50 + j0.85
3.43 + j1.20
3.35 + j1.05
Z
=
Test circuit impedance as measured from
gate to ground.
source
Z
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 16. Series Equivalent Source and Load Impedance
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
11
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
12
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2007
• Initial Release of Data Sheet
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
14
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Document Number: MRFE6S9045N
Rev.0, 10/2007
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