AOD413 [FREESCALE]

P-Channel 40-V (D-S) MOSFET High performance trench technology; P通道40 -V （ DS ） MOSFET高性能沟道技术


型号：	AOD413
厂家：	Freescale
描述：	P-Channel 40-V (D-S) MOSFET High performance trench technology P通道40 -V （ DS ） MOSFET高性能沟道技术
文件：	总5页 (文件大小：453K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Freescale

AOD413 /MCD413

P-Channel 40-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(Ω)

I_D(A)

69 @ V_GS= -10V

-40

106 @ V_GS= -4.5V

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

DPAK saves board space

•

Fast switching speed

High performance trench technology

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

V_DS

V_GS

I_D

I_DM

I_S

-40

±20

±72

-30

Gate-Source Voltage

Continuous Drain Current^a

Pulsed Drain Current^b

T_A=25 C

Continuous Source Current (Diode Conduction)^a

^oC

P_D

Power Dissipation

T_A=25 C

Operating Junction and Storage Temperature Range

T, T -55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Maximum Units

Maximum Junction-to-Ambient^a

Maximum Junction-to-Case

^oC/W

R_θJA

^oC/W

3.0

R_θJC

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

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AOD413 /MCD413

SPECIFICATIONS (T_A= 25^oC UNLESS OTHERWISE NOTED)

Limits

Unit

Parameter

Symbol

Test Conditions

Min Typ Max

Static

Gate-Threshold Voltage

Gate-Body Leakage

V_GS(th)

I_GSS

V_DS= V_GS, I_D= -250 uA

V_DS= 0 V, V_GS= ±25 V

-1

±100

-1

-5

V_DS= -24 V, V_GS= 0 V

Zero Gate Voltage Drain Current

I_DSS

V_DS= -24 V, V_GS= 0 V, T_J= 55^oC

On-State Drain Current^A

I_D(on)

V_DS= -5 V, V_GS= -10 V

V_GS= -10 V, I_D= -22 A

V_GS= -4.5 V, I_D= -18 A

-41

106

Drain-Source On-Resistance^A

r_DS(on)

mΩ

Forward Tranconductance^A

Diode Forward Voltage

g_fs

V_SD

V_DS= -15 V, I_D= -22 A

I_S= -41 A, V_GS= 0 V

-0.7

Dynamic^b

Total Gate Charge

Q_g

Q_gs

Q_gd

2.2

2.5

V_DS= -15 V, V_GS= -4.5 V,

I_D= -22 A

Gate-Source Charge

Gate-Drain Charge

Switching

Turn-On Delay Time

Rise Time

t_d(on)

t_r

t_d(off)

t_f

2.8

53.6

V_DD= -15 V, R_L= 15 Ω , ID = -24 A,

VGEN = -10 V, RG = 6Ω

Turn-Off Delay Time

Fall-Time

Notes

Pulse test: PW <= 300us duty cycle <= 2%.

Guaranteed by design, not subject to production testing.

FREESCALE reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation

or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou t of the application or

use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental

damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and

actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by

under its patent rights nor the

are not designed,

rights of others. freescale products

customer’s technical experts. freescale does not convey any license

intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or

of the freescale product could create

sustain life, or for any other application in which the failure

a situation where personal injury or death may occur.

and its

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Action Employer.

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AOD413 /MCD413

Typical Electrical Characteristics

25^oC

10V

T_A= -55^oC

125^oC

1.5

2.5

3.5

V_GS- Gate-to-Source Voltage (V)

V_DS- Drain-to-Source Voltage(V)

Output Characteristics

Transfer Characteristics

0.4

0.35

0.3

Ciss, Coss and Crss measurement of AM4541C Die2

PMOS

900

800

700

600

500

400

300

200

100

4.5V

0.25

0.2

Ciss

Coss

Crss

0.15

0.1

10V

0.05

Vds(V)

I_D- Drain Current (A)

Figure 3. On Resistance Vs Vgs Voltage

Capacitance

1.6

1.5

1.4

1.3

1.2

1.1

V_GS= - 10V

V^D= 10V

I_D= 4.6A

0.9

0.8

0.7

0.6

-50

-25

100

125

150

T_J- Junction Temperature (^oC)

QG, Total Gate Charge (nC)

Gate Charge

On-Resistance vs. Junction Temperature

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AOD413 /MCD413

Typical Electrical Characteristics

0.25

ID = -5.7A

100

0.2

T_A= 125^oC

0.15

25^oC

0.1

0.01

0.001

0.05

TA = 25^oC

0.0001

0.2

0.4

0.6

0.8

1.2

_SD- Source-to-Drain Voltage (V)

-VGS, GATE TO SOURCE VOLTAGE (V)

Source-Drain Diode Forward Voltage

Figure 8. On-Resistance with Gate to Source Voltage

SINGLE PULSE

RqJA = 125C/W

TA = 25C

1.9

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

I_D= -250

-50

-25

100

125

150

0.001

0.01

0.1

100

1000

T_J- Temperature (^oC)

t1, TIME (sec)

Threshold Voltage

Figure 10. Single Pulse Maximum Power Dissipation

Normalized Thermal Transient Junction to Ambient

0.1

D=0.5

0.2

RqJA(t) = r(t) + RqJA

RqJA = 125^oC/W

0.1

0.05

0.02

(

pk)

t 1

0.01

0.001

0.01

TJ - TA = P *RqJA(t)

Duty Cycle, D = t1 / t2

S INGLEP ULS E

0.001

0.0001

0.01

0.1

100

1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve

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AOD413 /MCD413

Package Information

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