AON6280 [FREESCALE]
80V N-Channel MOSFET; 80V N沟道MOSFET型号: | AON6280 |
厂家: | Freescale |
描述: | 80V N-Channel MOSFET |
文件: | 总6页 (文件大小:330K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AON6280
80V N-Channel MOSFET
General Description
uniquely optimized to provide the most efficient high
The AON6280 uses trench MOSFET technology that is
frequency switching performance. Both conduction an switching power losses are minimized due to an
d
extremely low combination of R
ronous
DS(ON) , Ciss and Coss. This device is ideal for boost converters and synch
rectifiers for consumer, telecom, industrial powersupplies
and LED backlighting.
Features
VDS
80V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=6V)
85A
< 4.1mΩ
< 5.0mΩ
D
Top View
1
8
7
6
5
2
3
4
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
80
±20
85
V
V
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
ID
TC=100°C
65
A
A
IDM
230
17
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
13
IAS
50
A
EAS
125
83
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
33
TA=25°C
7.3
PDSM
W
°C
Power Dissipation A
4.7
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
14
40
1
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
17
55
RθJA
Steady-State
Steady-State
RθJC
1.5
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AON6280
80V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
80
V
VDS=80V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
3.2
nA
V
VGS(th)
ID(ON)
2
2.6
230
A
3.4
5.8
4
4.1
7
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=6V, ID=20A
5
mΩ
S
VDS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
76
0.7
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
1
V
85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3930
592
66
pF
pF
pF
Ω
VGS=0V, VDS=40V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=40V, ID=20A
0.3
0.7
1.1
82
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
58
15
14
13
6
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=40V, RL=2Ω,
RGEN=3Ω
tD(off)
tf
32
9
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
36
ns
Qrr
nC
153
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AON6280
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
5V
6V
VDS=5V
4.5V
10V
4V
125°C
25°C
VGS=3.5V
4
0
1
2
3
4
5
6
0
1
2
3
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
10
8
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
6
VGS=6V
4
VGS
ID=20A
=6V
VGS=10V
2
0
0.8
0
5
10
15
ID (A)
20
25
30
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
12
10
8
1.0E+02
1.0E+01
ID=20A
1.0E+00
125°C
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
6
25°C
4
2
25°C
0
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AON6280
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5000
VDS=40V
ID=20A
Ciss
8
4000
6
3000
2000
1000
0
4
Coss
2
Crss
0
0
10
20
30
Qg (nC)
40
50
60
0
10
20
30
VDS (Volts)
Figure 8: Capacitance Characteristics
40
50
60
70
80
Figure 7: Gate-Charge Characteristics
500
400
300
200
100
0
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
RDS(ON)
10µs
100µs
1ms
DC
10ms
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AON6280
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
80
60
TA=25°C
TA=100°C
100
40
20
0
TA=150°C
TA=125°C
10
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
10000
1000
100
10
TA=25°C
80
60
40
20
0
1
0
25
50
75
100
125
150
0.00001
0.001
0.1
10
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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AON6280
80V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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