AON6411 [FREESCALE]
20V P-Channel MOSFET; 20V P沟道MOSFET
| 型号： | AON6411 |
| 厂家： | 
Freescale |
| 描述： | 20V P-Channel MOSFET |
| 文件： | 总6页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6411
20V P-Channel MOSFET
General Description
technology with a low resistance package to provide
The AON6411 combines advanced trench MOSFET
extremely low RDS(ON)
. This device is ideal for load switch and battery protection applications.
Features
VDS
-20
ID (at VGS= -10V)
-85A
RDS(ON) (at VGS= -10V)
RDS(ON) (at VGS =-4.5V)
RDS(ON) (at VGS =-2.5V)
< 2.1mΩ
< 2.5mΩ
< 3.6mΩ
D
Top View
1
8
2
3
7
6
G
4
5
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
DS
Gate-Source Voltage
Continuous Drain
Current G
VGS
±12
V
A
TC=25°C
-85
-67
ID
TC=100°C
Pulsed Drain Current C
IDM
-340
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
-47
-38
70
IDSM
A
IAS
A
Avalanche energy L=0.1mH C
EAS
245
mJ
TC=25°C
156
62.5
Power Dissipation B
TC=100°C
PD
W
TA=25°C
7.3
Power Dissipation A
TA=70°C
PDSM
W
°C
4.7
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
14
Max
17
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
40
55
RθJC
0.6
0.8
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AON6411
20V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-20
V
VDS=-20V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS=±12V
VDS=VGS, ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-1.3
nA
V
VGS(th)
ID(ON)
-0.5
-0.85
-340
A
1.7
2.45
2
2.1
3
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-20A
2.5
3.6
mΩ
mΩ
S
VGS=-2.5V, ID=-20A
2.8
VDS=-5V, ID=-20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
115
-0.57
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current G
-1
V
-85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
10290
1910
1395
2.1
pF
pF
pF
Ω
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
V
GS=0V, VDS=-10V, f=1MHz
GS=0V, VDS=0V, f=1MHz
4.2
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
235
100
21
330
140
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
V
V
GS=-10V, VDS=-10V, ID=-20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
36
9
18
ns
GS=-10V, VDS=-10V, RL=0.5Ω,
RGEN=3Ω
tD(off)
tf
282
90
ns
ns
trr
IF=-20A, dI/dt=500A/µs
IF=-20A, dI/dt=500A/µs
48
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
178
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.Maximum UIS current limited by test equipment.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AON6411
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
100
-2.5V
VDS=-5V
-2V
80
60
40
20
0
-4.5V
-10V
125°C
25°C
VGS=-1.5V
4
0
1
2
3
5
0
0.5
1
1.5
2
2.5
3
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
5
4
3
2
1
1.8
1.6
1.4
1.2
1
VGS=-10V
ID=-20A
VGS=-2.5V
VGS=-4.5V
ID=-20A
VGS=-4.5V
VGS=-10V
VGS=-2.5V
ID=-20A
0.8
0
25
50
75
100
125
150
175
0
5
10
15
-ID (A)
20
25
30
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
6
5
4
3
2
1
0
1.0E+02
1.0E+01
ID=-20A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AON6411
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
18000
16000
14000
VDS=-10V
ID=-20A
8
Ciss
12000
6
4
2
0
10000
8000
6000
4000
2000
0
Coss
Crss
0
50
100
150
200
250
0
5
10
15
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
900
800
700
600
500
400
300
200
100
0
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
100µs
RDS(ON)
limited
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.8°C/W
0.1
0.01
PD
Single Pulse
Ton
T
1E-05
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
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AON6411
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
200
TA=25°C
TA=100°C
150
100
TA=150°C
100
TA=125°C
10
50
1
0
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
80
60
40
20
0
10000
1000
100
10
TA=25°C
1
0.0001
0.01
1
100
10000
0
25
50
75
100
125
150
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
RθJA=55°C/W
0.1
0.01
PD
Ton
T
Single Pulse
0.1
0.001
0.0001
0.001
0.01
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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AON6411
20V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
f
td(off)
td(on)
t
r
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
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