AON7826 [FREESCALE]
20V Dual N-Channel MOSFET; 20V双N沟道MOSFET
| 型号： | AON7826 |
| 厂家： | 
Freescale |
| 描述： | 20V Dual N-Channel MOSFET |
| 文件： | 总6页 (文件大小：379K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7826
20V Dual N-Channel MOSFET
General Description
The AON7826 is designed to provide a high efficienc
y
synchronous buck power stage with optimal layout an
d
board space utilization. It includes two low RDS (ON)
MOSFETs in a dual DFN3x3 package. The AON7826 is
well suited for use in compact DC/DC converter applications.
Features
VDS
20V
ID (at VGS=10V)
22A
R
DS(ON) (at VGS=10V)
< 23mΩ
< 26mΩ
< 34mΩ
< 52mΩ
RDS(ON) (at VGS =4.5V)
RDS(ON) (at VGS =2.5V)
RDS(ON) (at VGS =1.8V)
D1
D2
Top View
G1
S1
D2
D2
D1
D1
S2
G2
G1
G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
20
±12
22
V
V
VGS
TC=25°C
Continuous Drain
Current
ID
TC=100°C
14
A
Pulsed Drain Current C
IDM
50
TA=25°C
TA=70°C
9
Continuous Drain
Current
IDSM
A
7
Avalanche Current C
IAS, IAR
8
A
Avalanche energy L=0.1mH C
EAS, EAR
3
16.7
6.7
mJ
TC=25°C
Power Dissipation B
TC=100°C
PD
W
TA=25°C
3.1
PDSM
W
°C
Power Dissipation A
2
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
30
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
60
75
RθJC
6.2
7.5
1/6
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AON7826
20V Dual N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
20
V
VDS=20V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±12V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=9A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
1.1
±nA
V
VGS(th)
ID(ON)
0.4
50
0.75
A
19
25.5
21
23
32
26
34
52
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=7A
mΩ
mΩ
mΩ
S
VGS=2.5V, ID=6A
VGS=1.8V, ID=2A
VDS=5V, ID=9A
IS=1A,VGS=0V
26
34
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
20
0.7
1
V
Maximum Body-Diode Continuous Current
15
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
420
65
525
95
630
125
105
2.6
pF
pF
pF
Ω
VGS=0V, VDS=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
45
75
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=10V, ID=9A
VGS=10V, VDS=10V, RL=1.1Ω,
0.8
1.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
10
12.5
6
15
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
4.5
7.5
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
1
2
3
7.5
20
6
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=9A, dI/dt=500A/µs
IF=9A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
14
6
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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2/6
AON7826
20V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
0
20
10V
VDS=5V
4.5V
15
10
5
2.5V
1.8V
125°C
25°C
VGS=1.5V
4
0
0
0.5
1
1.5
2
2.5
0
1
2
3
5
VGS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
60
1.8
1.6
1.4
1.2
1
VGS=2.5V
ID=6A
50
40
30
20
10
VGS=1.8V
ID=2A
VGS=1.8V
VGS=2.5V
VGS=4.5V
VGS=4.5V
I =7A
D
VGS=10V
ID=9A
VGS=10V
0.8
0
25
50
75
100
125
150
175
0
5
10
15
20
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
80
70
60
50
40
30
20
10
1.0E+02
1.0E+01
ID=9A
1.0E+00
125°C
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
25°C
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
0
2
4
6
8
10
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/6
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AON7826
20V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1000
VDS=10V
ID=9A
8
800
Ciss
6
600
4
400
Coss
2
200
Crss
0
0
0
3
6
9
12
15
0
5
10
DS (Volts)
15
20
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=150°C
0.1
TC=25°C
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power RatingJunction-to-
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Case (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=7.5°C/W
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AON7826
20V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
25
TΑ=25°C
20
TΑ=100°C
TΑ=150°C
15
10
10
TΑ=125°C
5
1
0
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
25
20
15
10
5
TA=25°C
1
0
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
T
CASE (°C)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
5/6
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AON7826
20V Dual N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
6/6
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