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AOT25S65 [FREESCALE]

600V 20A a MOS TM Power Transistor; 600V 20A的MOS TM功率晶体管
AOT25S65
型号： AOT25S65
厂家： Freescale    Freescale
描述：

600V 20A a MOS TM Power Transistor
600V 20A的MOS TM功率晶体管

晶体 晶体管
文件： 总7页 (文件大小：728K)
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AOT25S65/AOB25S65/AOTF25S65  
600V 20A  
α
MOS TM Power Transistor  
General Description  
fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of  
The AOT25S65 & AOB25S65 & AOTF25S65 have been  
performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be  
adopted quickly into new and existing offline power supply  
designs.  
Features  
VDS @ Tj,max  
IDM  
RDS(ON),max  
Qg,typ  
750V  
104A  
0.19Ω  
26.4nC  
5.8µC  
Eoss @ 400V  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
AOT25S65/AOB25S65  
AOTF25S65  
AOTF25S65L  
Units  
Drain-Source Voltage  
VDS  
650  
V
Gate-Source Voltage  
VGS  
±30  
25*  
16*  
104  
7
V
A
TC=25°C  
25  
16  
25*  
16*  
Continuous Drain  
Current  
Pulsed Drain Current C  
Avalanche Current C  
ID  
TC=100°C  
IDM  
IAR  
A
Repetitive avalanche energy C  
Single pulsed avalanche energy G  
TC=25°C  
EAR  
EAS  
96  
mJ  
mJ  
W
750  
50  
357  
2.9  
40  
PD  
Power Dissipation B  
Derate above 25oC  
0.4  
100  
0.3  
W/ o  
C
MOSFET dv/dt ruggedness  
Peak diode recovery dv/dt H  
dv/dt  
V/ns  
°C  
20  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds J  
Thermal Characteristics  
TL  
300  
°C  
Parameter  
Symbol  
AOT25S65/AOB25S65  
AOTF25S65  
AOTF25S65L  
Units  
Maximum Junction-to-Ambient A,D  
Maximum Case-to-sink A  
RθJA  
65  
65  
65  
°C/W  
RθCS  
RθJC  
0.5  
--  
--  
°C/W  
°C/W  
Maximum Junction-to-Case  
0.35  
2.5  
3.1  
* Drain current limited by maximum junction temperature.  
1/7  
www.freescale.net.cn  
AOT25S65/AOB25S65/AOTF25S65  
600V 20A  
α
MOS TM Power Transistor  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
-
STATIC PARAMETERS  
ID=250µA, VGS=0V, TJ=25°C  
ID=250µA, VGS=0V, TJ=150°C  
VDS=650V, VGS=0V  
650  
-
750  
-
BVDSS  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
700  
-
1
V
-
IDSS  
µA  
VDS=520V, TJ=150°C  
-
10  
-
-
IGSS  
VDS=0V, VGS=±30V  
Gate-Body leakage current  
Gate Threshold Voltage  
-
±100  
4
nΑ  
V
VGS(th)  
VDS=5V,ID=250µA  
2.6  
3.3  
0.165  
0.47  
0.84  
-
VGS=10V, ID=12.5A, TJ=25°C  
-
-
-
-
-
0.19  
0.53  
-
Ω
Ω
V
RDS(ON)  
Static Drain-Source On-Resistance  
VGS=10V, ID=12.5A, TJ=150°C  
IS=12.5A,VGS=0V, TJ=25°C  
VSD  
IS  
Diode Forward Voltage  
Maximum Body-Diode Continuous Current  
Maximum Body-Diode Pulsed Current  
25  
104  
A
ISM  
-
A
DYNAMIC PARAMETERS  
Ciss  
Input Capacitance  
Output Capacitance  
-
-
1278  
87  
-
-
pF  
pF  
VGS=0V, VDS=100V, f=1MHz  
Coss  
Effective output capacitance, energy  
related H  
Co(er)  
Co(tr)  
-
-
64.5  
-
-
pF  
pF  
VGS=0V, VDS=0 to 480V, f=1MHz  
Effective output capacitance, time  
related I  
236.7  
VGS=0V, VDS=100V, f=1MHz  
VGS=0V, VDS=0V, f=1MHz  
Crss  
Rg  
Reverse Transfer Capacitance  
Gate resistance  
-
-
1.4  
4.9  
-
-
pF  
Ω
SWITCHING PARAMETERS  
Qg  
Qgs  
Qgd  
tD(on)  
tr  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
-
-
-
-
-
-
-
-
-
-
26.4  
6.2  
9.5  
29  
-
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
ns  
ns  
ns  
ns  
VGS=10V, VDS=480V, ID=12.5A  
VGS=10V, VDS=400V, ID=12.5A,  
30  
RG=25Ω  
tD(off)  
tf  
112  
34  
trr  
IF=12.5A,dI/dt=100A/µs,VDS=400V  
IF=12.5A,dI/dt=100A/µs,VDS=400V  
IF=12.5A,dI/dt=100A/µs,VDS=400V  
408  
33  
Body Diode Reverse Recovery Time  
Peak Reverse Recovery Current  
ns  
A
Irm  
Qrr  
8.27  
µC  
Body Diode Reverse Recovery Charge  
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.  
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation  
limit for cases where additional heatsinking is used.  
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ  
=25°C.  
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.  
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.  
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a  
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.  
G. L=60mH, IAS=5A, VDD=150V, Starting TJ=25°C  
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.  
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.  
J. Wavesoldering only allowed at leads.  
2/7  
www.freescale.net.cn  
AOT25S65/AOB25S65/AOTF25S65  
600V 20A  
α
MOS TM Power Transistor  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
35  
30  
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
10V  
10V  
7V  
7V  
6V  
6V  
5.5V  
5.5V  
5V  
5V  
VGS=4.5V  
15  
VGS=4.5V  
0
0
5
10  
20  
0
5
10  
15  
20  
VDS (Volts)  
VDS (Volts)  
Figure 2: On-Region Characteristics@125°C  
Figure 1: On-Region Characteristics@25°C  
1000  
100  
10  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
-55°C  
VDS=20V  
125°C  
VGS=10V  
1
25°C  
0.1  
0.01  
0
10  
20  
30  
D (A)  
40  
50  
60  
2
4
6
8
10  
I
VGS(Volts)  
Figure 4: On-Resistance vs. Drain Current and  
Gate Voltage  
Figure 3: Transfer Characteristics  
1.2  
1.1  
1
3
2.5  
2
VGS=10V  
ID=12.5A  
1.5  
1
0.9  
0.8  
0.7  
0.5  
0
-100  
-50  
0
50  
100  
150  
200  
-100  
-50  
0
50  
Temperature (°C)  
Figure 5: On-Resistance vs. Junction Temperature  
100  
150  
200  
TJ (oC)  
Figure 6: Break Down vs. Junction Temperature  
3/7  
www.freescale.net.cn  
AOT25S65/AOB25S65/AOTF25S65  
600V 20A  
α
MOS TM Power Transistor  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
15  
12  
9
1.0E+02  
1.0E+01  
1.0E+00  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
125°C  
VDS=480V  
ID=12.5A  
25°C  
6
3
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
0
8
16  
24  
32  
40  
VSD (Volts)  
Q
g (nC)  
Figure 7: Body-Diode Characteristics (Note E)  
Figure 8: Gate-Charge Characteristics  
10000  
1000  
100  
12  
Ciss  
10  
8
6
Coss  
Eoss  
4
10  
2
Crss  
0
1
0
0
100  
200  
300  
VDS (Volts)  
400  
500  
600  
100  
200  
300  
400  
500  
600  
VDS (Volts)  
Figure 10: Coss stored Energy  
Figure 9: Capacitance Characteristics  
1000  
100  
10  
1000  
100  
10  
10µs  
RDS(ON)  
RDS(ON)  
limited  
10µs  
limited  
100µs  
100µs  
1ms  
1ms  
1
1
DC  
10ms  
10ms  
DC  
0.1s  
1s  
0.1  
0.01  
0.1  
0.01  
TJ(Max)=150°C  
TC=25°C  
TJ(Max)=150°C  
TC=25°C  
0.1  
1
10  
VDS (Volts)  
100  
1000  
0.1  
1
10  
100  
1000  
VDS (Volts)  
Figure 11: Maximum Forward Biased Safe  
Operating Area for AOT(B)25S65 (Note F)  
Figure 12: Maximum Forward Biased Safe  
Operating Area for AOTF25S65(Note F)  
4/7  
www.freescale.net.cn  
AOT25S65/AOB25S65/AOTF25S65  
600V 20A  
α
MOS TM Power Transistor  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
900  
750  
600  
450  
300  
150  
0
1000  
100  
10  
10µs  
RDS(ON)  
limited  
100µs  
1ms  
10ms  
0.1s  
1s  
1
DC  
0.1  
0.01  
TJ(Max)=150°C  
TC=25°C  
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
VDS (Volts)  
100  
1000  
T
CASE (°C)  
Figure 13: Maximum Forward Biased Safe  
Operating Area for AOTF25S65L(Note F)  
Figure 14: Avalanche energy  
30  
25  
20  
15  
10  
5
0
0
25  
50  
75  
100  
125  
150  
TCASE (°C)  
Figure 15: Current De-rating (Note B)  
5/7  
www.freescale.net.cn  
AOT25S65/AOB25S65/AOTF25S65  
600V 20A  
α
MOS TM Power Transistor  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
10  
D=Ton/T  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
TJ,PK=TC+PDM.ZθJC.RθJC  
1
R
θJC=0.35°C/W  
0.1  
PD  
Single Pulse  
0.01  
0.001  
Ton  
T
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width (s)  
Figure 16: Normalized Maximum Transient Thermal Impedance for AOT(B)25S65 (Note F)  
10  
1
D=Ton/T  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
TJ,PK=TC+PDM.ZθJC.RθJC  
R
θJC=2.5°C/W  
0.1  
PD  
0.01  
Ton  
T
Single Pulse  
0.001  
0.001  
0.00001  
0.0001  
0.01  
0.1  
1
10  
100  
Pulse Width (s)  
Figure 17: Normalized Maximum Transient Thermal Impedance for AOTF25S65 (Note F)  
10  
1
D=Ton/T  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
TJ,PK=TC+PDM.ZθJC.RθJC  
R
θJC=3.1°C/W  
0.1  
PD  
0.01  
0.001  
Ton  
T
Single Pulse  
0.001  
0.00001  
0.0001  
0.01  
0.1  
1
10  
100  
Pulse Width (s)  
Figure 18: Normalized Maximum Transient Thermal Impedance for AOTF25S65L (Note F)  
6/7  
www.freescale.net.cn  
AOT25S65/AOB25S65/AOTF25S65  
600V 20A  
α
MOS TM Power Transistor  
Gate Charge Test Circuit &Waveform  
Vgs  
Qg  
10V  
+
VDC  
+
Qgs  
Qgd  
Vds  
VDC  
-
-
DUT  
Vgs  
Vds  
Ig  
Charge  
Resistive Switching Test Circuit & Waveforms  
RL  
Vds  
90%  
10%  
+
DUT  
Vdd  
Vgs  
VDC  
Rg  
-
Vgs  
Vgs  
t d(on)  
t
r
t d(off)  
t
f
t on  
toff  
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms  
L
2
EAR=1/2LI  
AR  
BVDSS  
Vds  
Id  
Vds  
+
Vgs  
Vdd  
IAR  
Vgs  
VDC  
Id  
Rg  
-
DUT  
Vgs  
Vgs  
Diode RecoveryTest Circuit &Waveforms  
Qrr =- Idt  
Vds +  
Vds -  
Ig  
DUT  
Vgs  
Isd  
trr  
L
IF  
Isd  
dI/dt  
+
IRM  
Vdd  
Vgs  
VDC  
Vdd  
-
Vds  
7/7  
www.freescale.net.cn  

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