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AOT2606L [FREESCALE]

60V N-Channel MOSFET; 60V N沟道MOSFET
AOT2606L
型号： AOT2606L
厂家： Freescale    Freescale
描述：

60V N-Channel MOSFET
60V N沟道MOSFET
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AOT2606L/AOB2606L/AOTF2606L  
60V N-Channel MOSFET  
General Description  
MOSFET technology that is uniquely optimized to provide  
The AOT2606L & AOB2606L & AOTF2606L uses Trench  
the most efficient high frequency switching performance.  
minimized due to an extremely low combination of RDS(ON)  
Both conduction and switching power losses are  
,
Ciss and Coss. This device is ideal for boost converters  
and synchronous rectifiers for consumer, telecom,  
industrial power supplies and LED backlighting.  
Features  
VDS  
60V  
72A  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
< 6.5mΩ (< 6.2mΩ )  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
AOT2606L/AOB2606L  
60  
AOTF2606L  
Units  
Drain-Source Voltage  
VDS  
V
V
Gate-Source Voltage  
VGS  
±20  
TC=25°C  
72  
56  
54  
38  
Continuous Drain  
Current G  
ID  
TC=100°C  
A
Pulsed Drain Current C  
IDM  
260  
13  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
IDSM  
A
10  
Avalanche Current C  
IAS  
60  
A
Avalanche energy L=0.1mH C  
EAS  
180  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
115  
36.5  
18  
PD  
W
57.5  
TA=25°C  
2.1  
1.3  
PDSM  
W
°C  
Power Dissipation A  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
AOT2606L/AOB2606L  
AOTF2606L  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
≤ 10s  
15  
60  
15  
60  
RθJA  
Steady-State  
Steady-State  
RθJC  
1.3  
4.1  
* Surface mount package TO263  
1/7  
www.freescale.net.cn  
AOT2606L/AOB2606L/AOTF2606L  
60V N-Channel MOSFET  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
ID=250µA, VGS=0V  
BVDSS  
Drain-Source Breakdown Voltage  
60  
V
VDS=60V, VGS=0V  
1
IDSS  
Zero Gate Voltage Drain Current  
µA  
5
TJ=55°C  
VDS=0V, VGS=±20V  
VDS=VGS，ID=250µA  
VGS=10V, VDS=5V  
VGS=10V, ID=20A  
TO220/TO220F  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
±100  
3.5  
nA  
V
VGS(th)  
ID(ON)  
2.5  
3
260  
A
5.4  
8.5  
6.5  
mΩ  
mΩ  
TJ=125°C  
10.5  
RDS(ON)  
Static Drain-Source On-Resistance  
VGS=10V, ID=20A  
5.1  
6.2  
TO263  
VDS=5V, ID=20A  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
75  
S
V
A
IS=1A,VGS=0V  
Maximum Body-Diode Continuous Current G  
0.7  
1
72  
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
4050  
345  
pF  
pF  
pF  
Ω
VGS=0V, VDS=30V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
16.8  
0.65  
VGS=0V, VDS=0V, f=1MHz  
0.3  
1.0  
SWITCHING PARAMETERS  
Qg(10V) Total Gate Charge  
53  
22  
17  
5
75  
31  
nC  
nC  
nC  
nC  
ns  
Qg(4.5V) Total Gate Charge  
VGS=10V, VDS=30V, ID=20A  
Qgs  
Qgd  
tD(on)  
tr  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
18  
20  
33  
4
VGS=10V, VDS=30V, RL=1.5Ω,  
RGEN=3Ω  
ns  
tD(off)  
tf  
ns  
ns  
trr  
IF=20A, dI/dt=500A/µs  
IF=20A, dI/dt=500A/µs  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
26  
ns  
Qrr  
nC  
125  
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The  
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application  
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.  
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper  
dissipation limit for cases where additional heatsinking is used.  
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep  
initial TJ =25°C.  
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.  
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.  
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,  
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.  
G. The maximum current limited by package.  
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.  
2/7  
www.freescale.net.cn  
AOT2606L/AOB2606L/AOTF2606L  
60V N-Channel MOSFET  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
120  
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
VDS=5V  
10V  
6V  
5V  
125°C  
4.5V  
25°C  
Vgs=4V  
4
2
3
4
5
6
0
1
2
3
5
VGS(Volts)  
VDS (Volts)  
Fig 1: On-Region Characteristics (Note E)  
Figure 2: Transfer Characteristics (Note E)  
10  
8
2
1.8  
1.6  
1.4  
1.2  
1
VGS=10V  
VGS=10V  
ID=20A  
6
4
2
0.8  
0
0
5
10  
15  
ID (A)  
20  
25  
30  
0
25  
50  
75  
100 125 150 175 200  
Temperature (°C)  
Figure 3: On-Resistance vs. Drain Current and Gate  
Voltage (Note E)  
Figure 4: On-Resistance vs. Junction Temperature  
(Note E)  
14  
12  
10  
8
1.0E+02  
1.0E+01  
ID=20A  
1.0E+00  
125°C  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
125°C  
25°C  
6
25°C  
4
2
0.0  
0.2  
0.4  
VSD (Volts)  
Figure 6: Body-Diode Characteristics (Note E)  
0.6  
0.8  
1.0  
1.2  
2
4
6
8
10  
VGS (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
(Note E)  
3/7  
www.freescale.net.cn  
AOT2606L/AOB2606L/AOTF2606L  
60V N-Channel MOSFET  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
10  
5000  
4000  
3000  
2000  
1000  
0
VDS=30V  
ID=20A  
Ciss  
8
6
4
Coss  
2
Crss  
0
0
10  
20  
30  
Qg (nC)  
40  
50  
60  
0
10  
20  
30  
40  
50  
60  
VDS (Volts)  
Figure 8: Capacitance Characteristics  
Figure 7: Gate-Charge Characteristics  
1000  
800  
600  
400  
200  
0
1000.0  
100.0  
10.0  
1.0  
TJ(Max)=175°C  
TC=25°C  
10µs  
100µs  
RDS(ON)  
1ms  
10ms  
DC  
TJ(Max)=175°C  
TC=25°C  
0.1  
0.0  
0.01  
0.1  
1
10  
100  
1000  
0.0001 0.001  
0.01  
0.1  
1
100  
10  
VDS (Volts)  
Pulse Width (s)  
Figure 9: Maximum Forward Biased Safe Operating  
Area for AOT2606L and AOB2606L (Note F)  
Figure 10: Single Pulse Power Rating Junction-to-Case  
for AOT2606L and AOB2606L (Note F)  
10  
1
D=Ton/T  
TJ,PK=TC+PDM.ZθJC.RθJC  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
RθJC=1.3°C/W  
0.1  
PD  
Single Pulse  
0.01  
0.001  
Ton  
T
1E-05  
0.0001  
0.001  
0.01  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2606L and AOB2606L (Note F)  
0.1  
1
10  
4/7  
www.freescale.net.cn  
AOT2606L/AOB2606L/AOTF2606L  
60V N-Channel MOSFET  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
1000  
800  
600  
400  
200  
0
1000.0  
100.0  
10.0  
1.0  
TJ(Max)=175°C  
TC=25°C  
10µs  
RDS(ON)  
100µs  
1ms  
10ms  
DC  
TJ(Max)=175°C  
TC=25°C  
0.1  
0.0  
0.01  
0.1  
1
10  
100  
1000  
0.0001 0.001  
0.01  
0.1  
1
10  
100  
VDS (Volts)  
Pulse Width (s)  
Figure 10: Single Pulse Power Rating Junction-to-Case  
Figure 9: Maximum Forward Biased  
Safe Operating Area for AOTF2606L  
for AOTF2606L (Note F)  
10  
1
D=Ton/T  
TJ,PK=TC+PDM.ZθJC.RθJC  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
RθJC=4.1°C/W  
0.1  
P
Single Pulse  
0.001  
0.01  
0.001  
T
on  
T
1E-05  
0.0001  
0.01  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF2606L (Note F)  
0.1  
1
10  
5/7  
www.freescale.net.cn  
AOT2606L/AOB2606L/AOTF2606L  
60V N-Channel MOSFET  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
1000  
100  
10  
150  
100  
50  
TA=25°C  
TA=100°C  
TA=150°C  
TA=125°C  
0
1
10  
100  
1000  
0
25  
50  
75  
100  
125  
150  
175  
Time in avalanche, tA (µs)  
TCASE (°C)  
Figure 12: Single Pulse Avalanche capability  
(Note C)  
Figure 13: Power De-rating for AOT2606L and  
AOB2606L (Note F)  
80  
60  
40  
20  
0
10000  
1000  
100  
10  
TA=25°C  
1
0
25  
50  
75  
100  
125  
150  
175  
1E-05  
0.001  
0.1  
10  
1000  
TCASE (°C)  
Pulse Width (s)  
Figure 14: Current De-rating for AOT2606L and  
AOB2606L (Note F)  
Figure 15: Single Pulse Power Rating Junction-to-  
Ambient (Note H)  
10  
1
D=Ton/T  
TJ,PK=TA+PDM.ZθJA.RθJA  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
RθJA=60°C/W  
0.1  
PD  
0.01  
Single Pulse  
Ton  
T
0.001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)  
6/7  
www.freescale.net.cn  
AOT2606L/AOB2606L/AOTF2606L  
60V N-Channel MOSFET  
Gate Charge Test Circuit & Waveform  
Vgs  
Qg  
10V  
+
VDC  
+
Qgs  
Qgd  
Vds  
VDC  
-
-
DUT  
Vgs  
Ig  
Charge  
Resistive Switching Test Circuit & Waveforms  
RL  
Vds  
Vds  
90%  
10%  
+
DUT  
Vdd  
Vgs  
VDC  
Rg  
-
Vgs  
Vgs  
td(on)  
t
r
td(off)  
t
f
ton  
toff  
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  
L
EAR= 1/2 LIA2R  
BVDSS  
Vds  
Id  
Vgs  
Vds  
+
Vgs  
Vdd  
I AR  
VDC  
Id  
Rg  
-
DUT  
Vgs  
Vgs  
Diode Recovery Test Circuit & Waveforms  
Qrr = - Idt  
Vds +  
Vds -  
Ig  
DUT  
Vgs  
trr  
L
Isd  
I F  
Isd  
Vgs  
dI/dt  
I RM  
+
Vdd  
VDC  
Vdd  
-
Vds  
7/7  
www.freescale.net.cn  

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