AOT264L [FREESCALE]
60V N-Channel MOSFET; 60V N沟道MOSFET
| 型号： | AOT264L |
| 厂家： | 
Freescale |
| 描述： | 60V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：606K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT264L/AOB264L
60V N-Channel MOSFET
General Description
The AOT264L/AOB264L combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer,
ting.
telecom, industrial power supplies and LED backligh
Features
VDS
60V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 6V)
140A
< 3.2mΩ (< 3.0mΩ )
< 3.5mΩ (< 3.3mΩ )
TO-263
D2PAK
TO220
D
D
D
G
G
G
S
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
60
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
V
V
VGS
±20
TC=25°C
140
Continuous Drain
Current G
ID
TC=100°C
110
A
A
Pulsed Drain Current C
IDM
480
19
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
15
IAS, IAR
100
A
EAS, EAR
500
mJ
TC=25°C
Power Dissipation B
TC=100°C
333
PD
W
167
TA=25°C
2.1
PDSM
W
°C
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
12
Max
15
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
48
60
RθJC
0.35
0.45
* Surface mount package TO263
1/6
www.freescale.net.cn
AOT264L/AOB264L
60V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
60
V
VDS=60V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
TO220
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
3.2
nA
V
VGS(th)
ID(ON)
2.2
2.7
480
A
2.4
4
3.2
4.8
TJ=125°C
VGS=6V, ID=20A
TO220
2.7
2.3
3.5
3.0
3.3
RDS(ON)
Static Drain-Source On-Resistance
mΩ
VGS=10V, ID=20A
TO263
VGS=6V, ID=20A
TO263
2.6
80
VDS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
0.65
1
140
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
5500 6960 8400
pF
pF
pF
Ω
VGS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
840
30
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=20A
0.4
62
0.9
1.4
94
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
78
25
5
nC
nC
nC
ns
ns
ns
ns
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
23
7
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
tD(off)
tf
45
8
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
18
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
26
34
ns
Qrr
105
nC
155
202
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/6
www.freescale.net.cn
AOT264L/AOB264L
60V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
6V
VDS=5V
4.5V
4V
125°C
25°C
Vgs=3.5V
4
1
2
3
VGS(Volts)
4
5
6
0
1
2
3
5
V
DS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
6
4
2
0
2.2
2
VGS=10V
ID=20A
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
VGS=6V
ID=20A
0.8
0
5
10
15
D (A)
20
25
30
0
25
50
75
100 125 150 175 200
I
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
8
6
4
2
0
1.0E+02
1.0E+01
ID=20A
125°C
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
25°C
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS (Volts)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/6
www.freescale.net.cn
AOT264L/AOB264L
60V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10000
8000
6000
4000
2000
0
VDS=30V
ID=20A
8
Ciss
6
4
Coss
2
Crss
0
0
10
20
30
40
g (nC)
50
60
70
80
0
10
20
30
VDS (Volts)
40
50
60
Q
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
600
500
400
300
200
1000.0
100.0
10.0
1.0
10µs
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Case (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TC+PDM.ZθJC.RθJC
θJC=0.45°C/W
R
PD
0.1
0.01
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
4/6
www.freescale.net.cn
AOT264L/AOB264L
60V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
10
400
300
200
100
0
TA=25°C
TA=100°C
TA=150°C
TA=125°C
1
10
100
1000
0
25
50
75
100
125
150
175
Time in avalanche, tA (µs)
T
CASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
150
120
90
60
30
0
1000
100
10
TA=25°C
1
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note F)
100
125
150
175
0.001
0.1
10
Pulse Width (s)
1000
T
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
PD
0.01
0.001
Ton
Single Pulse
1
T
0.01
0.1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
www.freescale.net.cn
AOT264L/AOB264L
60V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
6/6
www.freescale.net.cn
相关型号：
©2020 ICPDF网 联系我们和版权申明