IRL3803L [FREESCALE]
HEXFET® Power MOSFET; HEXFET®功率MOSFET
| 型号： | IRL3803L |
| 厂家： | 
Freescale |
| 描述： | HEXFET® Power MOSFET |
| 文件： | 总9页 (文件大小：8269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRL3803S/L
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL3803S)
l Low-profile through-hole (IRL3803L)
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 30V
RDS(on) = 0.006Ω
G
l Fully Avalanche Rated
ID = 140A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
arewellknownfor, providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL3803L) is available for low-
profileapplications.
2
TO-262
D
Pak
Absolute Maximum Ratings
Parameter
Max.
140
98
470
3.8
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
A
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
W
W
Power Dissipation
200
1.3
Linear Derating Factor
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
±16
610
71
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
20
mJ
5.0
V/ns
-55 to + 175
300 (1.6mm from case )
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
0.75
Units
RθJC
RθJA
°C/W
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
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5\x08*\x16*\x0D\x05\x08\x14\x14\x0D\x04\x1B\x0D\x1B\x16@\x08\x08\x061*\x07\x04\x06\x16\x0B\x04\x1B\x16\x0C\x08/\x1B\x0D*\x07\
IRL3803S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.052 V/°C Reference to 25°C, ID = 1mAꢀ
0.006
0.009
VGS = 10V, ID = 71A
VGS = 4.5V, ID = 59A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 71Aꢀ
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 16V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
1.0
55
V
S
Forward Transconductance
25
250
100
-100
140
41
78
µA
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
IGSS
VGS = -16V
Qg
Qgs
Qgd
td(on)
tr
ID = 71A
Gate-to-Source Charge
nC VDS = 24V
VGS = 4.5V, See Fig. 6 and 13 ꢀ
V= 15V
Gate-to-Drain ("Miller") Charge
Turn-On
Delay
Time
14
DD
RiseTime
230
ID = 71A
td(off)
tf
Turn-Off Delay Time
FallTime
29
35
RG = 1.3Ω
RD = 0.20Ω, See Fig. 10 ꢀ
Between lead,
LS
Internal Source Inductance
7.5
nH
pF
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
5000
1800
880
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
D
S
IS
140
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
470
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
1.3
120 180
450 680
V
TJ = 25°C, IS = 71A, VGS = 0V
TJ = 25°C, IF = 71A
ns
Qrr
ton
nC di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Uses IRL3803 data and test conditions.
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 180µH
RG = 25Ω, IAS = 71A. (See Figure 12)
Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
ISD ≤ 71A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
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IRL3803S/L
10000
1000
100
10
10000
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
12V
10V
8.0V
6.0V
4.0V
3.0V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.0V
BOTTOM 2.0V
2.0V
1
1
0.1
0.1
2.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
= 175°C
T
= 25°C
J
J
0.01
0.01
A
A
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
1000
100
10
I
= 120A
D
TJ = 25°C
TJ = 175°C
1
0.1
0.01
V DS= 25V
20µs PULSE WIDTH
V
= 10V
GS
A
9.0A
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
2.0
3.0
4.0
5.0
6.0
7.0
8.0
T , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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IRL3803S/L
10000
8000
6000
4000
2000
0
15
12
9
V
C
C
C
= 0V,
f = 1MHz
I
= 71A
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
gd
ds
V
V
= 24V
= 15V
DS
DS
= C
C
C
iss
= C + C
ds
gd
oss
6
C
rss
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
40
80
120
160
200
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
T = 175°C
J
100µs
T = 25°C
J
1ms
T
T
= 25°C
= 175°C
C
J
Single Pulse
10ms
V
= 0V
GS
A
A
1
10
100
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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IRL3803S/L
RD
140
120
100
80
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+
VDD
-
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
60
Fig 10a. Switching Time Test Circuit
40
V
DS
20
90%
0
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
2
DM
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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IRL3803S/L
1500
1200
900
600
300
0
I
D
L
TOP
29A
50A
BOTTOM 71A
V
DS
D.U.T.
R
+
-
G
V
DD
I
10V
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
= 15V
50
DD
A
175
25
75
100
125
150
V
DD
Starting T , Junction Temperature (°C)
J
V
DS
Fig 12c. Maximum Avalanche Energy
I
AS
Vs. Drain Current
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
10 V
+
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRL3803S/L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig14. ForN-ChannelHEXFETS
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IRL3803S/L
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
1.40 (.055)
- A -
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
MAX.
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
Part Marking Information
D2Pak
A
INTERNATIONAL
RECTIFIER
PART NUMBER
F530S
9246
1M
DATE CODE
(YYWW)
9B
ASSEMBLY
YY = YEAR
WW = WEEK
LOT CODE
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IRL3803S/L
Tape & Reel Information
D2Pak
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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