MC4414 [FREESCALE]

N-Channel 30-V (D-S) MOSFET High power and current handling capability; N通道30 -V ( DS ) MOSFET的高功率和电流处理能力
MC4414
型号: MC4414
厂家: Freescale    Freescale
描述:

N-Channel 30-V (D-S) MOSFET High power and current handling capability
N通道30 -V ( DS ) MOSFET的高功率和电流处理能力

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Freescale  
AO4414/MC4414  
N-Channel 30-V (D-S) MOSFET  
These miniature surface mount MOSFETs utilize  
High Cell Density process. Low rDS(on) assures  
minimal power loss and conserves energy, making  
this device ideal for use in power management  
circuitry. Typical applications are PWMDC-DC  
converters, power management in portable and  
battery-powered products such as computers,  
printers, battery charger, telecommunication power  
system, and telephones power system.  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) m()  
ID (A)  
9.0  
22 @ VGS = 10V  
36 @ VGS = 4.5V  
30  
7.0  
Low rDS(on) Provides Higher Efficiency and  
Extends Battery Life  
8
1
2
7
6
5
Miniature SO-8 Surface Mount Package  
Saves Board Space  
3
4
High power and current handling capability  
Low side high current DC-DC Converter  
applications  
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
VDS  
Limit  
30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
±20  
TA=25oC  
TA=70oC  
9.0  
7.4  
30  
Continuous Drain Currenta  
Pulsed Drain Currentb  
ID  
A
IDM  
IS  
Continuous Source Current (Diode Conduction)a  
A
W
oC  
1.6  
3.1  
2.0  
TA=25oC  
TA=70oC  
Power Dissipationa  
PD  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RθJA  
Maximum Units  
oC/W  
oC/W  
t <= 10 sec  
Steady-State  
40  
Maximum Junction-to-Ambienta  
70  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
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1
Freescale  
AO4414/MC4414  
Limits  
Unit  
Parameter  
Symbol  
Test Conditions  
Min Typ Max  
Static  
Gate-Threshold Voltage  
Gate-Body Leakage  
VGS(th)  
IGSS  
VDS = VGS, ID = 250 uA  
VDS = 0 V, VGS = 20 V  
1
V
±100 nA  
VDS = 24 V, VGS = 0 V  
VDS = 24 V, VGS = 0 V, TJ = 55oC  
1
IDSS  
Zero Gate Voltage Drain Current  
uA  
25  
On-State Drain CurrentA  
ID(on)  
VDS = 5 V, VGS = 10 V  
VGS = 10 V, ID = 9 A  
VGS = 4.5 V, ID = 7 A  
20  
A
22  
Drain-Source On-ResistanceA  
rDS(on)  
m  
36  
Forward TranconductanceA  
Diode Forward Voltage  
gfs  
VDS = 15 V, ID = 9 A  
IS = 2.3 A, VGS = 0 V  
40  
S
VSD  
0.7  
V
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Qg  
Qgs  
Qgd  
td(on)  
tr  
4.0  
1.1  
1.4  
16  
5
VDS = 15 V, VGS = 4.5 V,  
ID = 9 A  
nC  
nS  
VDD = 25 V, RL = 25 , I  
GEN = 10 V  
D
= 1 A,  
V
Turn-Off Delay Time  
Fall-Time  
td(off)  
tf  
23  
3
Source-Ddrain Reverse Recovery Tim trr  
IF = 2.3 A, Di/Dt = 100 A/uS  
41  
Notes  
a.  
b.  
Pulse test: PW <= 300us duty cycle <= 2%.  
Guaranteed by design, not subject to production testing.  
e to any products herein. freescale makes no warranty, representation  
reserves the right to make changes without further notic  
FREESCALE  
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou t of the application or  
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided infreescale data sheets and/or specifications can and do vary in different applications and  
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by  
under its patent rights nor the  
are not designed,  
rights of others. freescale products  
customer’s technical experts. freescale does not convey any license  
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or  
of the freescale product could create  
sustain life, or for any other application in which the failure  
a situation where personal injury or death may occur.  
Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold freescale and its  
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney  
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that freescale was negligent regarding the design or manufacture of the part. freescale is an Equal Opportunity/Affirmative  
Action Employer.  
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2
Freescale  
AO4414/MC4414  
Typical Electrical Characteristics (N-Channel)  
30  
25  
20  
15  
10  
5
30  
TA = -55oC  
VDS = 5V  
25oC  
VGS = 10V  
25  
6.0V  
125oC  
20  
15  
10  
5
5.0V  
4.0V  
3.0V  
0
0
0.5  
1.5  
2.5  
3.5  
4.5  
0
0.5  
1
1.5  
2
2.5  
VGS, GATE TO SOURCE VOLTAGE (V)  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 2. Body Diode Forward Voltage Variation  
with Source Current and Temperature  
Figure 1. On-Region Characteristics  
2.5  
2
1500  
f = 1MHz  
VGS = 0 V  
1200  
900  
600  
300  
0
CISS  
4.5V  
1.5  
1
6.0V  
COSS  
10V  
25  
CRSS  
0.5  
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
30  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
ID, DRAIN CURRENT (A)  
Figure 3. On Resistance Vs Vgs Voltage  
Figure 4. Capacitance Characteristics  
1.6  
1.4  
10  
VGS = 10V  
ID = 7A  
8
6
4
2
0
1.2  
1.0  
0.8  
0.6  
-50 -25  
0
25  
50  
75  
100 125 150  
0
2
4
6
8
10  
TJ Juncation Temperature (C)  
Qg, Gate Charge (nC)  
Figure 5. Gate Charge Characteristics  
Figure 6. On-Resistance Variation with Temperature  
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3
Freescale  
AO4414/MC4414  
Typical Electrical Characteristics (N-Channel)  
100  
0.1  
0.08  
0.06  
0.04  
0.02  
0
VGS = 0V  
ID = 7 A  
10  
1
TA = 125oC  
25oC  
0.1  
0.01  
0.001  
0.0001  
TA = 25oC  
2
4
6
8
10  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
VGS, GATE TO SOURCE VOLTAGE (V)  
VSD, BODY DIODE FORWARD VOLTAGE (V)  
Figure 7. Transfer Characteristics  
Figure 8. On-Resistance with Gate to Source Voltage  
2.2  
2
50  
SINGLE PULSE  
RqJA = 125oC/W  
TA = 25oC  
VDS = VGS  
ID = -250mA  
40  
1.8  
1.6  
1.4  
1.2  
1
30  
20  
10  
0
-50 -25  
0
25 50  
75 100 125 150 175  
0.001  
0.01  
0.1  
1
10  
100  
t1, TIME (SEC)  
TA, AMBIENT TEMPERATURE (oC)  
Figure 9. Vth Gate to Source Voltage Vs Temperature  
Figure 10. Single Pulse Maximum Power Dissipation  
Normalized Thermal Transient Junction to Ambient  
1
0.1  
D = 0.5  
RqJ A(t) = r(t) +RqJ A  
RqJ A = 125 /W  
0.2  
0.1  
0.0  
P (pk)  
t1  
0.02  
0.01  
t2  
0.01  
TJ - TA = P *RqJ A(t)  
Duty Cycle, D = t1/ t2  
S INGLE P ULS E  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t1, TIME (s ec)  
Figure 11. Transient Thermal Response Curve  
www.freescale.net.cn  
4
Freescale  
AO4414/MC4414  
Package Information  
SO-8: 8LEAD  
H x 45°  
www.freescale.net.cn  
5

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