MC4414 [FREESCALE]
N-Channel 30-V (D-S) MOSFET High power and current handling capability; N通道30 -V ( DS ) MOSFET的高功率和电流处理能力型号: | MC4414 |
厂家: | Freescale |
描述: | N-Channel 30-V (D-S) MOSFET High power and current handling capability |
文件: | 总5页 (文件大小:236K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Freescale
AO4414/MC4414
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
9.0
22 @ VGS = 10V
36 @ VGS = 4.5V
30
7.0
•
•
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
8
1
2
7
6
5
Miniature SO-8 Surface Mount Package
Saves Board Space
3
4
•
•
High power and current handling capability
Low side high current DC-DC Converter
applications
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
30
Units
Drain-Source Voltage
Gate-Source Voltage
V
VGS
±20
TA=25oC
TA=70oC
9.0
7.4
30
Continuous Drain Currenta
Pulsed Drain Currentb
ID
A
IDM
IS
Continuous Source Current (Diode Conduction)a
A
W
oC
1.6
3.1
2.0
TA=25oC
TA=70oC
Power Dissipationa
PD
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
Maximum Units
oC/W
oC/W
t <= 10 sec
Steady-State
40
Maximum Junction-to-Ambienta
70
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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AO4414/MC4414
Limits
Unit
Parameter
Symbol
Test Conditions
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 20 V
1
V
±100 nA
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55oC
1
IDSS
Zero Gate Voltage Drain Current
uA
25
On-State Drain CurrentA
ID(on)
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 9 A
VGS = 4.5 V, ID = 7 A
20
A
22
Drain-Source On-ResistanceA
rDS(on)
mΩ
36
Forward TranconductanceA
Diode Forward Voltage
gfs
VDS = 15 V, ID = 9 A
IS = 2.3 A, VGS = 0 V
40
S
VSD
0.7
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
4.0
1.1
1.4
16
5
VDS = 15 V, VGS = 4.5 V,
ID = 9 A
nC
nS
VDD = 25 V, RL = 25 Ω , I
GEN = 10 V
D
= 1 A,
V
Turn-Off Delay Time
Fall-Time
td(off)
tf
23
3
Source-Ddrain Reverse Recovery Tim trr
IF = 2.3 A, Di/Dt = 100 A/uS
41
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
e to any products herein. freescale makes no warranty, representation
reserves the right to make changes without further notic
FREESCALE
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou t of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided infreescale data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
under its patent rights nor the
are not designed,
rights of others. freescale products
customer’s technical experts. freescale does not convey any license
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
of the freescale product could create
sustain life, or for any other application in which the failure
a situation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold freescale and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that freescale was negligent regarding the design or manufacture of the part. freescale is an Equal Opportunity/Affirmative
Action Employer.
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AO4414/MC4414
Typical Electrical Characteristics (N-Channel)
30
25
20
15
10
5
30
TA = -55oC
VDS = 5V
25oC
VGS = 10V
25
6.0V
125oC
20
15
10
5
5.0V
4.0V
3.0V
0
0
0.5
1.5
2.5
3.5
4.5
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 2. Body Diode Forward Voltage Variation
with Source Current and Temperature
Figure 1. On-Region Characteristics
2.5
2
1500
f = 1MHz
VGS = 0 V
1200
900
600
300
0
CISS
4.5V
1.5
1
6.0V
COSS
10V
25
CRSS
0.5
0
5
10
15
20
25
30
0
5
10
15
20
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On Resistance Vs Vgs Voltage
Figure 4. Capacitance Characteristics
1.6
1.4
10
VGS = 10V
ID = 7A
8
6
4
2
0
1.2
1.0
0.8
0.6
-50 -25
0
25
50
75
100 125 150
0
2
4
6
8
10
TJ Juncation Temperature (C)
Qg, Gate Charge (nC)
Figure 5. Gate Charge Characteristics
Figure 6. On-Resistance Variation with Temperature
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AO4414/MC4414
Typical Electrical Characteristics (N-Channel)
100
0.1
0.08
0.06
0.04
0.02
0
VGS = 0V
ID = 7 A
10
1
TA = 125oC
25oC
0.1
0.01
0.001
0.0001
TA = 25oC
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. On-Resistance with Gate to Source Voltage
2.2
2
50
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
VDS = VGS
ID = -250mA
40
1.8
1.6
1.4
1.2
1
30
20
10
0
-50 -25
0
25 50
75 100 125 150 175
0.001
0.01
0.1
1
10
100
t1, TIME (SEC)
TA, AMBIENT TEMPERATURE (oC)
Figure 9. Vth Gate to Source Voltage Vs Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
D = 0.5
RqJ A(t) = r(t) +RqJ A
RqJ A = 125 癈/W
0.2
0.1
0.0
P (pk)
t1
0.02
0.01
t2
0.01
TJ - TA = P *RqJ A(t)
Duty Cycle, D = t1/ t2
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (s ec)
Figure 11. Transient Thermal Response Curve
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AO4414/MC4414
Package Information
SO-8: 8LEAD
H x 45°
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