MC4702 [FREESCALE]
N-Channel 30-V (D-S) MOSFET High performance trench technology; N通道30 -V （ DS ） MOSFET高性能沟道技术
| 型号： | MC4702 |
| 厂家： | 
Freescale |
| 描述： | N-Channel 30-V (D-S) MOSFET High performance trench technology |
| 文件： | 总5页 (文件大小：549K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale
AO4702/MC4702
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
22 @ VGS = 10V
30 @ VGS = 4.5V
ID (A)
9.4
30
7.0
8
•
•
Low rDS(on) provides higher efficiency and
extends battery life
1
2
7
6
5
Low thermal impedance copper leadframe
SOIC-8 saves board space
3
4
•
•
Fast switching speed
High performance trench technology
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
V
±20
TA=25oC
TA=70oC
9.4
7.4
±30
1.6
3.1
2
Continuous Drain Currenta
ID
A
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
IDM
IS
A
TA=25oC
TA=70oC
PD
W
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
Maximum Units
oC/W
t <= 10 sec
Steady State
50
Maximum Junction-to-Ambienta
oC/W
92
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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AO4702/MC4702
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Unit
Parameter
Symbol
Test Conditions
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±20 V
1
V
±100 nA
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55oC
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 9.2 A
1
IDSS
Zero Gate Voltage Drain Current
On-State Drain CurrentA
uA
25
ID(on)
20
A
22
Drain-Source On-ResistanceA
rDS(on)
mΩ
30
VGS = 4.5 V, ID = 7 A
Forward TranconductanceA
Diode Forward Voltage
gfs
VDS = 15 V, ID = 9.2 A
IS = 2.3 A, VGS = 0 V
40
S
VSD
0.7
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
4.0
1.1
1.4
720
165
60
16
5
V
DS = 10 V, VGS = 4.5 V,
nC
pF
ID = 7 A
VDS = 15 V, VGS = 0 V,
f = 1MHz
VDD = 10 V, RL = 6 Ω , ID = 1 A,
nS
VGEN = 10 V
Turn-Off Delay Time
Fall-Time
td(off)
tf
23
3
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
rther notice to any products herein. RF EESCALE makes no
FREESCALE reserves the right to make changes without fu
warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or
use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any s uch unintended or unauthorized application, Buyer s hall indemnify and hold freescale and its
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fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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claim alleges that freescale was negligent regarding the
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AO4702/MC4702
Typical Electrical Characteristics (N-Channel)
30
25
20
15
10
5
30
TA = -55oC
VDS = 5V
25oC
VGS = 10V
25
6.0V
125oC
20
15
10
5
5.0V
4.0V
3.0V
0
0
0.5
1.5
2.5
3.5
4.5
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Body Diode Forward Voltage Variation
with Source Current and Temperature
2.5
2
1500
f = 1MHz
VGS = 0 V
1200
900
600
300
0
CISS
4.5V
1.5
1
6.0V
COSS
10V
25
CRSS
15
0.5
0
5
10
15
20
30
0
5
10
20
25
30
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 3. On Resistance Vs Vgs Voltage
Figure 4. Capacitance Characteristics
10
1.6
1.4
VGS = 10V
ID = 7A
8
6
4
2
0
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
TJ Juncation Temperature (C)
Qg, Charge (nC)
Figure 5. Gate Charge Characteristics
Figure 6. On-Resistance Variation with Temperature
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AO4702/MC4702
Typical Electrical Characteristics (N-Channel)
100
0.1
0.08
0.06
0.04
0.02
0
VGS = 0V
ID = 7 A
10
1
TA = 125oC
25oC
0.1
0.01
0.001
0.0001
TA = 25oC
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. On-Resistance with Gate to Source Voltage
2.2
2
50
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
VDS = VGS
ID = -250mA
40
1.8
1.6
1.4
1.2
1
30
20
10
0
-50 -25
0
25 50
75 100 125 150 175
0.001
0.01
0.1
1
10
100
t1, TIME (SEC)
TA, AMBIENT TEMPERATURE (oC)
Figure 9. Vth Gate to Source Voltage Vs Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
D = 0.5
RqJ A(t) = r(t) +RqJ A
RqJ A = 125 癈/W
0.2
0.1
0.0
P (pk)
t1
0.02
0.01
t2
0.01
TJ - TA = P *RqJ A(t)
Duty Cycle, D = t1/ t2
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (s ec)
Figure 11. Transient Thermal Response Curve
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AO4702/MC4702
Package Information
SO-8: 8LEAD
H x 45°
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