MCD442 [FREESCALE]
N-Channel 60-V (D-S) MOSFET High performance trench technology; N通道60 -V （ DS ） MOSFET高性能沟道技术
| 型号： | MCD442 |
| 厂家： | 
Freescale |
| 描述： | N-Channel 60-V (D-S) MOSFET High performance trench technology |
| 文件： | 总5页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale
AOD442 /MCD442
N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
38 @ VGS = 10V
50 @ VGS = 4.5V
ID (A)
30
60
26
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DPAK saves board space
•
•
Fast switching speed
High performance trench technology
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
60
Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
V
VGS
±20
TC=25oC
TC=25oC
19
40
30
50
ID
A
IDM
IS
A
W
oC
PD
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Symbol
Maximum Units
oC/W
RθJA
50
oC/W
3.0
RθJC
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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Freescale
AOD442 /MCD442
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Unit
Parameter
Symbol
Test Conditions
Min Typ Max
Static
Gate-Threshold Voltage
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 20 V
1.0
V
±100
1
Gate-Body Leakage
nA
VDS = 48 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
uA
VDS = 48 V, VGS = 0 V, TJ = 55oC
25
On-State Drain CurrentA
ID(on)
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 4.5 V, ID = 26 A
34
A
38
50
Drain-Source On-ResistanceA
rDS(on)
mΩ
Forward TranconductanceA
Diode Forward Voltage
gfs
VDS = 15 V, ID = 30 A
IS = 24 A, VGS = 0 V
22
S
VSD
1.1
V
Dynamicb
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
12.5
2.4
2.6
11
8
VDS = 15 V, VGS = 4.5 V,
ID = 30 A
nC
nS
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
D
VDD = 25 V, RL = 25 Ω , I = 30 A,
GEN
V
= 10 V
Turn-Off Delay Time
Fall-Time
td(off)
tf
19
6
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
b.
rther notice to any products herein. RF EESCALE makes no
FREESCALE reserves the right to make changes without fu
warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or
use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any s uch unintended or unauthorized application, Buyer s hall indemnify and hold freescale and its
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fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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claim alleges that freescale was negligent regarding the
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AOD442 /MCD442
Typical Electrical Characteristics
30
30
25
TA =-55oC
VGS = 10V
25
25oC
125oC
20
15
10
5
20
15
10
5
4.5V
0
0
2
3
4
5
6
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2000
1600
1200
800
400
0
2.2
2
1.8
1.6
1.4
1.2
1
Ciss
Coss
Crss
4.5V
10V
0.8
0
6
12
18
24
30
0
6
12
18
24
30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
8
2.6
2.2
1.8
1.4
1
VGS = 10V
6
4
0.6
0.2
2
0
-50
-25
0
25
50
75
100
125
150
175
0
4
8
12
16
20
TJ - Junction Temperature (oC)
Qg, Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
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Freescale
AOD442 /MCD442
Typical Electrical Characteristics (N-Channel)
0.12
0.1
100
10
TA = 125oC
1
0.08
0.06
0.04
0.02
25oC
0.1
0.01
0.001
0.0001
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1
1.2
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs.Gate-to Source Voltage
50
40
30
20
10
0
3
2.6
2.2
1.8
1.4
ID = 250
A
µ
-50
-25
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
TJ - Temperature (oC)
Time (sec)
Threshold Voltage
Single Pulse Power
1
D = 0.5
RθJA(t) = r(t) + Rθ
JA
RθJA = 125oC/W
0.2
0.1
0.1
0.05
P(pk)
TA = P * RθJA(t)
DutyCycle, D = t1 / t2
t1
0.02
0.01
t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Freescale
AOD442 /MCD442
Package Information
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