MCGPR63V477M13X26--RH [FREESCALE]
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs; RF功率LDMOS晶体管高耐用性N - 沟道增强 - 模式横向的MOSFET
| 型号： | MCGPR63V477M13X26--RH |
| 厂家： | 
Freescale |
| 描述： | RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs |
| 文件： | 总20页 (文件大小：1270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRFE6VP8600H
Rev. 1, 9/2011
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
Enhancement--Mode Lateral MOSFETs
Optimized for broadband operation from 470 to 860 MHz. Device has an
integrated input matching network for better power distribution. These devices
are ideally suited for use in analog or digital television transmitters.
•
Typical Narrowband Performance: VDD = 50 Volts, IDQ = 1400 mA,
Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 7.61 MHz Signal Bandwidth @
±4 MHz Offset with an Integration Bandwidth of 4 kHz.
470--860 MHz, 600 W, 50 V
LDMOS BROADBAND
RF POWER TRANSISTORS
P
(W)
f
G
η
(%)
ACPR
(dBc)
IRL
(dB)
out
ps
D
Signal Type
(MHz) (dB)
DVB--T (8k OFDM)
125 Avg.
860 19.3
30.0
--60.5
-- 1 2
•
Typical Pulsed Broadband Performance: VDD = 50 Volts, IDQ = 1400 mA,
Pulsed Width = 100 μsec, Duty Cycle = 10%
P
(W)
f
G
η
D
out
ps
Signal Type
(MHz)
(dB)
19.3
20.0
18.8
(%)
47.1
53.1
48.9
CASE 375D--05, STYLE 1
NI--1230
Pulsed
600 Peak
470
650
860
MRFE6VP8600HR6
Features
•
Capable of Handling >65:1 VSWR through all Phase Angles @ 50 Vdc,
860 MHz, DVB--T (8k OFDM) 240 Watts Avg. Output Power (3 dB Input
Overdrive from Rated Pout
)
CASE 375E--04, STYLE 1
NI--1230S
MRFE6VP8600HSR6
•
•
•
•
•
Exceptional Efficiency for Class AB Analog or Digital Television Operation
Full Performance across Complete UHF TV Spectrum, 470--860 MHz
Capable of 600 Watt CW Output Power with Adequate Thermal Management
Integrated Input Matching
Extended Negative Gate--Source Voltage Range of --6.0 V to +10 V
− Improves Class C Performance, e.g. in a Doherty Peaking Stage
PARTS ARE PUSH--PULL
− Enables Fast, Easy and Complete Shutdown of the Amplifier
•
Characterized from 20 V to 50 V for Extended Operating Range for use
with Drain Modulation
Excellent Thermal Characteristics
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Gate 1
Gate 2
Drain 1
Drain 2
3
4
1
2
•
•
•
Table 1. Maximum Ratings
Rating
(Top View)
Symbol
Value
Unit
Note: The backside of the package is the
source terminal for the transistor.
Drain--Source Voltage
V
--0.5, +130
--6.0, +10
--65 to +150
150
Vdc
Vdc
°C
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
T
Figure 1. Pin Connections
stg
T
°C
C
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
1052
5.26
W
W/°C
C
D
(1,2)
Operating Junction Temperature
T
J
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software &
Tools/Development Tools/Calculators to access MTTF calculators by product.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
Table 2. Thermal Characteristics
(1,2)
(3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
0.19
°C/W
JC
Case Temperature 74°C, 125 W CW, 50 V, 1400 mA, 860 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2 (2001--4000 V)
B (201--400 V)
IV (>1000 V)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Gate--Source Leakage Current
I
—
130
—
—
140
—
1
—
5
μAdc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 100 mA)
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
μAdc
μAdc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
—
20
(V = 100 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
(4)
Gate Threshold Voltage
(V = 10 Vdc, I = 980 μAdc)
V
V
1.5
2.1
—
2.07
2.65
0.24
15.6
2.5
3.1
—
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
(5)
Gate Quiescent Voltage
(V = 50 Vdc, I = 1400 mAdc, Measured in Functional Test)
DD
D
(4)
Drain--Source On--Voltage
(V = 10 Vdc, I = 2 Adc)
V
GS
D
Forward Transconductance
(V = 10 Vdc, I = 20 Adc)
g
—
—
fs
DS
D
(4)
Dynamic Characteristics
(6)
Reverse Transfer Capacitance
C
—
—
—
1.49
79.9
264
—
—
—
pF
pF
pF
rss
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
(6)
Output Capacitance
C
oss
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
(7)
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
(5)
Functional Tests
(In Freescale Narrowband Test Fixture, 50 ohm system) V = 50 Vdc, I = 1400 mA, P = 125 W Avg., f = 860 MHz,
DD DQ out
DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Signal Bandwidth @ ±4 MHz Offset with an Integration Bandwidth of 4 kHz.
Power Gain
G
18.0
29.0
—
19.3
30.0
--60.5
-- 1 2
21.0
—
dB
%
ps
D
Drain Efficiency
η
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
--58.5
-- 9
dBc
dB
—
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Performance with thermal grease TIM (thermal interface material) will typically degrade by 0.05°C/W due to the increased thermal contact
resistance of this TIM.
4. Each side of device measured separately.
5. Measurement made with device in push--pull configuration.
6. Part internally input matched.
7. Die capacitance value without internal matching.
(continued)
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
2
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Typical DVB--T (8k OFDM) Performance (In Freescale Narrowband Test Fixture, 50 ohm system) V = 50 Vdc, I = 1400 mA, f = 860 MHz,
DD
DQ
DVB--T (8k OFDM) Single Channel.
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF,
PAR
—
7.8
—
dB
P
= 125 W Avg.
out
Load Mismatch
Ψ
No Degradation in Output Power
VSWR >65:1 at all Phase Angles, 3 dB Overdrive from
Rated P (240 W Avg.)
out
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
3
R1
C2
C13
C1
C12
L1
C11
COAX3
C19
COAX1
C23*
C7
C5
C6
C14*
C16*
C18*
C17*
L2
C20
C3
C21
C4
C8*
C15*
C22
COAX4
COAX2
C24
MRFE6VP8600H
Rev. 1
L3
C25
C9
C26
C10
R2
*C8, C14, C15, C16, C17, C18 and C23 are mounted vertically.
Figure 2. MRFE6VP8600HR6(HSR6) Test Circuit Component Layout — 860 MHz, DVB--T (8k OFDM)
Table 5. MRFE6VP8600HR6(HSR6) Test Circuit Component Designations and Values — 860 MHz, DVB--T (8k OFDM)
Part
Description
10 μF, 50 V, Chip Capacitors
2.2 μF, 50 V, Chip Capacitors
100 pF Chip Capacitors
Part Number
GRM55DR61H106KA88L
C3225X7R1H225K
ATC100B101JT500XT
ATC100B240JT500XT
27291SL
Manufacturer
C1, C9
Murata
C2, C10
TDK
C3, C4, C20, C21, C23
ATC
C5, C6
C7
24 pF Chip Capacitors
ATC
0.8--8.0 pF Variable Capacitor
12 pF Chip Capacitor
Johanson Components
ATC
C8
ATC100B120JT500XT
C3225X7R2A225KT
GRM55ER72A475KA01B
MCGPR63V477M13X26--RH
ATC100B6R8CT500XT
ATC100B3R0CT500XT
ATC100B2R7BT500XT
ATC100B3R9CT500XT
ATC100B5R1CT500XT
ATC100B102JT50XT
UT--141C--25
C11, C24
C12, C25
C13, C26
C14
2.2 μF, 100 V, Chip Capacitors
4.7 μF, 100 V, Chip Capacitors
470 μF, 63 V Electrolytic Capacitors
6.8 pF Chip Capacitor
TDK
Murata
Multicomp
ATC
C15
3.0 pF Chip Capacitor
ATC
C16
2.7 pF Chip Capacitor
ATC
C17
3.9 pF Chip Capacitor
ATC
C18
5.1 pF Chip Capacitor
ATC
C19, C22
Coax1, 2, 3, 4
L1, L3
L2
1000 pF Chip Capacitors
25 Ω SemiRigid Coax, Length 2.0”
5.0 nH, 2 Turn Inductors
2.5 nH, 1 Turn Inductor
ATC
Micro--Coax
Coilcraft
Coilcraft
Vishay
Rogers
A02TKLC
A01TKLC
R1, R2
PCB
10 Ω, 1/4 W Chip Resistors
CRCW120610R0JNEA
RO4350B
0.030″, ε = 3.5
r
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
4
Z19
L1
V
BIAS
COAX1
R1
C1
C7
C2
Z17
Z15
Z5
Z6
Z7
Z9
Z11 Z13
Z12 Z14
Z3
C3
RF
INPUT
Z1 Z2
C5
L2
Z8
C8
Z10
Z16
C4
Z4
C6
Z18
R2
COAX2
Z20
L3
V
BIAS
C9
C10
V
SUPPLY
+
Z46
C12
C13
C11
Z44
COAX3
C19
Z21
Z23 Z25
Z27
Z29
Z31
Z33
Z35 Z37
Z39
C20
RF
OUTPUT
Z41
Z42 Z43
DUT
C14
C15 C16 C17 C18
C23
C21
Z40
Z22
Z24 Z26
Z45
Z28
Z30
Z32
Z34
Z36 Z38
C22
COAX4
C24
Z47
V
SUPPLY
+
C25
C26
Z1
Z2
0.204″ x 0.062″ Microstrip
0.245″ x 0.080″ Microstrip
0.445″ x 0.060″ Microstrip
0.019″ x 0.100″ Microstrip
0.415″ x 0.400″ Microstrip
0.083″ x 0.400″ Microstrip
0.022″ x 0.400″ Microstrip
0.208″ x 0.850″ Microstrip
0.242″ x 0.960″ Microstrip
Z17, Z18
Z19*, Z20*
Z21, Z22
Z23, Z24
Z25, Z26
Z27, Z28
Z29, Z30
Z31, Z32
Z33, Z34
0.780″ x 0.080″ Microstrip
0.354″ x 0.080″ Microstrip
0.164″ x 0.520″ Microstrip
0.186″ x 0.520″ Microstrip
0.088″ x 0.420″ Microstrip
0.072″ x 0.420″ Microstrip
0.072″ x 0.420″ Microstrip
0.259″ x 0.420″ Microstrip
0.075″ x 0.420″ Microstrip
Z35, Z36
Z37, Z38
Z39, Z40
Z41
Z42
Z43
0.052″ x 0.420″ Microstrip
0.211″ x 0.100″ Microstrip
0.389″ x 0.060″ Microstrip
0.070″ x 0.080″ Microstrip
0.018″ x 0.080″ Microstrip
0.204″ x 0.062″ Microstrip
0.850″ x 0.080″ Microstrip
0.250″ x 0.080″ Microstrip
Z3, Z4
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
Z13, Z14
Z15, Z16
Z44*, Z45*
Z46, Z47
* Line length includes microstrip bends
Figure 3. MRFE6VP8600HR6(HSR6) Test Circuit Schematic — 860 MHz, DVB--T (8k OFDM)
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS — 860 MHz
1.06
1.05
1.04
1.03
1.02
1.01
1
10
V
= 50 Vdc
V = 50 Vdc
DD
DD
9
8
7
6
5
4
3
2
I
= 100 mA
DS(Q)
40 Vdc
1400 mA
1900 mA
30 Vdc
20 Vdc
10 Vdc
2400 mA
0.99
0.98
0.97
0.96
0.95
1
0
0.94
-- 5 0
--25
0
25
50
75
100
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9
3
3.1 3.2 3.3
V
, GATE--SOURCE VOLTAGE (VOLTS)
T , CASE TEMPERATURE (°C)
C
GS
Note: Measured with both sides of the transistor tied together.
Figure 4. Normalized VGS Quiescent versus
Case Temperature
Figure 5. Drain Current versus Gate--Source Voltage
1000
64
Measured with ±30 mV(rms)ac @ 1 MHz
Ideal
P3dB = 59.0 dBm (794 W)
P2dB = 58.8 dBm (759 W)
V
= 0 Vdc
GS
62
60
58
56
54
52
50
C
oss
P1dB = 58.4 dBm (692 W)
100
10
1
Actual
V
= 50 Vdc, I = 1400 mA, f = 860 MHz
DQ
Pulse Width = 100 μsec, Duty Cycle = 10%
DD
C
rss
0
10
20
30
40
50
32 33 34 35 36 37 38 39 40 41 42 43
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
P , INPUT POWER (dBm)
in
DS
Note: Each side of device measured separately.
Figure 7. Pulsed CW Output Power versus
Input Power
Figure 6. Capacitance versus Drain--Source Voltage
22
60
50
40
V
= 50 Vdc, I = 1400 mA
DQ
DD
f = 860 MHz
Pulse Width = 100 μsec
Duty Cycle = 10%
21
20
G
ps
30
20
10
19
18
17
η
D
16
10
0
1000
100
, OUTPUT POWER (WATTS) PULSED
P
out
Figure 8. Pulsed Power Gain and Drain Efficiency
versus Output Power
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS — DVB--T (8k OFDM)
100
10
-- 20
-- 30
-- 40
7.61 MHz
1
-- 50
4 kHz BW
4 kHz BW
-- 60
-- 70
-- 80
-- 90
0.1
0.01
ACPR Measured at 4 MHz Offset
from Center Frequency
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation
5 Symbols
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
0.001
--100
-- 11 0
0.0001
0
2
4
6
8
10
12
-- 5
-- 4
-- 3
-- 2
-- 1
0
1
2
3
4
5
PEAK--TO--AVERAGE (dB)
f, FREQUENCY (MHz)
Figure 9. Source Peak--to--Average DVB--T (8k OFDM)
Figure 10. DVB--T (8k OFDM) Spectrum
40
-- 5 6
ACPR
V
= 50 Vdc, I = 1400 mA
DQ
DD
f = 860 MHz, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation
5 Symbols
-- 5 8
35
η
D
-- 6 0
-- 6 2
-- 6 4
-- 6 6
-- 6 8
30
25
G
ps
20
15
10
20
40
60
80
100
120 140
160
180
200
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 11. Single--Carrier DVB--T (8k OFDM) Drain
Efficiency, Power Gain and ACPR versus Output Power
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
9
8
7
10
10
10
V
P
= 50 Vdc
= 125 W CW
DD
out
6
10
10
5
4
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
Note: The MTTF calculation for this graph is based on the thermal
resistance of the part using thermal grease TIM mounting.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature -- CW
V
= 50 Vdc, I = 1400 mA, P = 125 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
860
1.14 + j0.88
2.61 + j1.84
Z
Z
=
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Test circuit impedance as measured
load
from drain to drain, balanced configuration.
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 13. Series Equivalent Source and Load Impedance
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
8
470--860 MHz REFERENCE CIRCUIT
VDD = 50 Volts, IDQ = 1400 mA, Channel Bandwidth = 8 MHz, Input
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF, TC = 50°C.
Output
PAR
(dB)
IMD
Shoulder
(dBc)
P
(W)
f
G
η
out
ps
D
Signal Type
(MHz) (dB)
(%)
27.2
30.6
27.9
DVB--T (8k OFDM)
125 Avg.
470
650
860
19.0
20.3
19.0
8.2
7.6
7.7
--31.1
--30.3
--30.4
C17
C16
R1
C2
C19
C1
C18
L1
COAX3
C31
COAX1
C3
C20
C22*
C33*
C12*
C10
C21*
C28*
C27*
C8
C6
C23*
C25*
C36
C32
C4
C5
C34
C26*
C29*
C24*
C7
C30*
C9*
C11*
C35
COAX4
Q1
C15
COAX2
MRFE6VP8600H
Rev. 1
L2
C39
C40
C13
C14
R2
C37
C38
*C9, C11, C12, C21, C22, C23, C24, C25, C26, C27, C28, C29, C30 and C33 are mounted vertically.
Figure 14. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Component Layout — 470--860 MHz
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
9
470--860 MHz REFERENCE CIRCUIT
Table 6. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Component Designations and Values — 470--860 MHz
Part
Description
10 μF, 50 V Chip Capacitors
2.2 μF, 50 V Chip Capacitors
10 pF Chip Capacitors
Part Number
GRM55DR61H106KA88L
C3225X7R1H225K
ATC100B100JT500XT
ATC100B470JT500XT
ATC100B270JT500XT
27291SL
Manufacturer
C1, C13
C2, C14
C3, C15
C4, C5
Murata
TDK
ATC
47 pF Chip Capacitors
ATC
C6, C7
27 pF Chip Capacitors
ATC
C8, C10
C9, C28
C11, C12
C16, C37
C17, C38
C18, C39
C19, C40
C20, C36
0.8--8.0 pF Variable Capacitors
8.2 pF Chip Capacitors
Johanson Components
ATC100B8R2CT500XT
ATC800B6R8BT500XT
ATC200B393KT50XT
C3225X7R2A225KT
GRM55ER72A475KA01B
EEV--FK2A221M
ATC
6.8 pF Chip Capacitors
ATC
39,000 pF Chip Capacitors
2.2 μF, 100 V Chip Capacitors
4.7 μF, 100 V Chip Capacitors
220 μF, 100 V Electrolytic Capacitors
56 pF Chip Capacitors
ATC
TDK
Murata
Panasonic--ECG
ATC
ATC100B560CT500XT
ATC800B7R5CT500XT
ATC800B8R2CT500XT
ATC800B130JT500XT
ATC800B9R1CT500XT
ATC800B3R3CT500XT
ATC100B3R9CT500XT
ATC100B102JT50XT
ATC100B121JT500XT
A02TKLC
C21, C25, C29
C22, C30
C23
7.5 pF Chip Capacitors
ATC
8.2 pF Chip Capacitors
ATC
13 pF Chip Capacitor
ATC
C24
9.1 pF Chip Capacitor
ATC
C26
3.3 pF Chip Capacitor
ATC
C27
3.9 pF Chip Capacitor
ATC
C31, C35
C32, C33, C34
L1, L2
1,000 pF Chip Capacitors
120 pF Chip Capacitors
5.0 nH, 2 Turn Inductors
10 Ω, 1/4 W Chip Resistors
25 Ω SemiRigid Coax, Length 2.0″
RF Power LDMOS Transistor
ATC
ATC
Coilcraft
Vishay
Micro--Coax
Freescale
Rogers
R1, R2
CRCW120610R0JNEA
UT--141C--25
Coax1, 2, 3, 4
Q1
MRFE6VP8600HR6
RO4350B
PCB
0.030″, ε = 3.5
r
Table 7. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Microstrips — 470--860 MHz
Microstrip
Description
0.204″ x 0.062″ Microstrip
0.245″ x 0.080″ Microstrip
0.445″ x 0.060″ Microstrip
0.019″ x 0.100″ Microstrip
0.305″ x 0.400″ Microstrip
0.083″ x 0.400″ Microstrip
0.095″ x 0.400″ Microstrip
0.055″ x 0.850″ Microstrip
0.083″ x 0.850″ Microstrip
0.071″ x 0.850″ Microstrip
0.187″ x 0.960″ Microstrip
0.055″ x 0.960″ Microstrip
0.780″ x 0.080″ Microstrip
0.354″ x 0.080″ Microstrip
0.164″ x 0.520″ Microstrip
0.074″ x 0.520″ Microstrip
0.075″ x 0.520″ Microstrip
Microstrip
Z33, Z34
Description
Z1
Z2
0.038″ x 0.520″ Microstrip
0.170″ x 0.420″ Microstrip
0.269″ x 0.420″ Microstrip
0.069″ x 0.420″ Microstrip
0.075″ x 0.420″ Microstrip
0.038″ x 0.420″ Microstrip
0.038″ x 0.100″ Microstrip
0.075″ x 0.100″ Microstrip
0.169″ x 0.100″ Microstrip
0.389″ x 0.060″ Microstrip
0.070″ x 0.080″ Microstrip
0.018″ x 0.080″ Microstrip
0.204″ x 0.062″ Microstrip
0.278″ x 0.080″ Microstrip
0.886″ x 0.080″ Microstrip
Z35, Z36
Z37, Z38
Z39, Z40
Z41, Z42
Z43, Z44
Z45, Z46
Z47, Z48
Z49, Z50
Z51, Z52
Z53
Z3, Z4
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
Z13, Z14
Z15, Z16
Z17, Z18
Z19, Z20
Z21, Z22
Z23, Z24
Z25*, Z26*
Z27, Z28
Z29, Z30
Z31, Z32
Z54
Z55
Z56, Z57
Z58*, Z59*
* Line length includes microstrip bends
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
10
470--860 MHz REFERENCE CIRCUIT
Z25
L1
V
BIAS
COAX1
C1
C2
R1
C3
Z23
Z19
Z5
Z6
Z7
Z8
Z9
Z11 Z13
Z15
Z17
Z21
Z3
C4
RF
INPUT
Z1 Z2
C6
C7
C8
Z10
C9
Z12 Z14
C10
Z16
C11
Z18
C12
Z20
Z22
C5
Z4
C15
Z24
R2
COAX2
Z26
L2
V
BIAS
C13 C14
V
SUPPLY
+
Z58
C19
C16 C17 C18
C20
Z56
Z27 Z29 Z31 Z33 Z35 Z37 Z39
COAX3
C21
C22
C31
Z41 Z43 Z45 Z47 Z49
Z51
RF
OUTPUT
C32
Z53
Z54 Z55
Q1
C23 C24
C25 C26
C27 C28
C33
C34
Z52
Z28 Z30 Z32 Z34 Z36 Z38 Z40
Z42 Z44 Z46 Z48 Z50
C35
COAX4
Z57
C29
C30
C36
Z59
V
+
SUPPLY
C37 C38 C39
C40
Figure 15. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Schematic — 470--860 MHz
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
11
TYPICAL CHARACTERISTICS — 470--860 MHz REFERENCE CIRCUIT
21
20
19
60
50
40
V
= 50 Vdc, I = 1400 mA
DQ
DD
Pulse Width = 100 μsec
Duty Cycle = 10%
G
ps
665 MHz
30
20
10
0
18
17
16
15
860 MHz
665 MHz
860 MHz
470 MHz
470 MHz
η
D
10
100
, OUTPUT POWER (WATTS) PULSED
1000
P
out
Figure 16. Broadband Pulsed Power Gain and Drain
Efficiency versus Output Power — 470--860 MHz
21
20
19
66
G
ps
62
58
54
50
46
42
η
D
18
17
-- 5
-- 7
16
15
14
IRL
-- 6
V
= 50 Vdc, P = 600 W Peak, I = 1400 mA
-- 11
-- 1 3
38
34
DD
out
DQ
Pulse Width = 100 μsec, Duty Cycle = 10%
13
400 450 500 550 600 650 700 750 800 850 900
f, FREQUENCY (MHz)
Figure 17. Broadband Pulsed Power Gain, Drain
Efficiency and IRL versus Frequency
35
-- 5
665 MHz
860 MHz
470 MHz
η
V
= 50 Vdc, I = 1400 mA
DQ
D
DD
DVB--T (8k OFDM), 64 QAM Data
Carrier Modulation, 5 Symbols
-- 1 0
-- 1 5
-- 2 0
30
25
20
15
G
ps
665 MHz
470 MHz
860 MHz
-- 2 5
(1)
IMD
470 MHz
665 MHz
10
5
-- 3 0
--35
860 MHz
0
40
80
120
160
200
P
, OUTPUT POWER (WATTS) AVG.
out
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
Figure 18. DVB--T (8k OFDM) Drain Efficiency, Power Gain and
IMD Shoulder versus Output Power — 470--860 MHz
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
12
TYPICAL CHARACTERISTICS — 470--860 MHz REFERENCE CIRCUIT
40
35
5
V
= 50 Vdc, I = 700 mA
DQ
DD
η
D
665 MHz
860 MHz
DVB--T (8k OFDM), 64 QAM Data
Carrier Modulation, 5 Symbols
0
470 MHz
-- 5
-- 1 0
-- 1 5
-- 2 0
30
25
G
ps
665 MHz
20
15
860 MHz
470 MHz
665 MHz
470 MHz
(1)
-- 2 5
--30
IMD
10
5
--
860 MHz
160
0
40
P
80
120
200
, OUTPUT POWER (WATTS) AVG.
out
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
Figure 19. DVB--T (8k OFDM) Drain Efficiency, Power Gain and
IMD Shoulder versus Output Power — 470--860 MHz
22
21
20
19
18
17
16
15
14
13
12
11
10
0
-- 1
T
= 35°C
50°C
C
-- 2
-- 3
-- 4
G
75°C
ps
-- 5
-- 6
-- 7
IRL
-- 8
-- 9
-- 1 0
75°C
V
= 50 Vdc, P = 125 W Avg.
out
= 1400 mA, DVB--T (8k OFDM)
DD
50°C
35°C
I
DQ
64 QAM Data Carrier Modulation, 5 Symbols
-- 11
-- 1 2
850 900
450
500 550
600
650 700
750 800
f, FREQUENCY (MHz)
Figure 20. Broadband Power Gain and IRL versus Frequency
37
35
33
31
29
-- 1 5
-- 1 7
-- 1 9
-- 2 1
-- 2 3
-- 2 5
-- 2 7
-- 2 9
-- 3 1
V
= 50 Vdc, P = 125 W Avg., I = 1400 mA
out DQ
DD
DVB--T (8k OFDM), 64 QAM Data Carrier Modulation, 5 Symbols
η
D
T
= 35°C
75°C
C
27
25
23
21
19
17
50°C
75°C
(1)
IMD
35°C
50°C -- 3 3
-- 3 5
450 500
550 600
650 700
750
800 850
900
f, FREQUENCY (MHz)
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
Figure 21. Broadband Drain Efficiency and IMD Shoulder versus Frequency
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
13
470--860 MHz REFERENCE CIRCUIT
Z = 10 Ω
o
f = 860 MHz
f = 470 MHz
Z
load
f = 860 MHz
Z
source
f = 470 MHz
V
= 50 Vdc, I = 1400 mA, P = 125 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
470
500
530
560
590
620
650
680
710
740
770
800
830
860
Ω
Ω
1.96 -- j3.13
1.91 -- j2.46
1.88 -- j1.86
1.91 -- j1.37
1.93 -- j0.94
1.99 -- j0.49
2.11 -- j0.14
2.17 + j0.02
2.14 + j0.26
2.11 + j0.32
1.92 + j0.56
1.65 + j0.91
1.50 + j1.07
0.95 + j1.72
5.30 + j1.92
4.65 + j1.95
4.50 + j2.35
4.71 + j2.66
5.40 + j2.75
5.93 + j2.29
6.03 + j1.81
6.04 + j1.45
5.58 + j0.95
5.37 + j0.80
4.80 + j0.56
4.78 + j0.55
4.59 + j0.45
3.93 + j0.11
Z
Z
=
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Test circuit impedance as measured
from drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 22. Broadband Series Equivalent Source and Load Impedance — 470--860 MHz
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
14
PACKAGE DIMENSIONS
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
15
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
16
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
17
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
18
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents to aid your design process.
Application Notes
•
•
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
•
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Sept. 2011
Sept. 2011
•
•
Initial Release of Data Sheet
Added Fig. 19, DVB--T (8k OFDM) Drain Efficiency, Power Gain and IMD Shoulder versus Output Power --
470--860 MHz @ 700 mA to indicate efficiency gains with appropriate precorrection systems, p. 13
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
19
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1--800--521--6274 or +1--480--768--2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1--8--1, Shimo--Meguro, Meguro--ku,
Tokyo 153--0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
support.asia@freescale.com
Semiconductor was negligent regarding the design or manufacture of the part.
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1--800--441--2447 or +1--303--675--2140
Fax: +1--303--675--2150
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
ꢀ Freescale Semiconductor, Inc. 2011. All rights reserved.
LDCForFreescaleSemiconductor@hibbertgroup.com
Document Number: MRFE6VP8600H
Rev. 1, 9/2011
相关型号：
MCGPR63V477M13X26-RH
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
FREESCALE
MCH-068TAL-01A-TR30
PCMCIA Connector, 68 Contact(s), 2 Row(s), Male, Right Angle, Solder Terminal
3M
MCH-068TAL-01A3-TR30
PCMCIA Connector, 68 Contact(s), 2 Row(s), Male, Right Angle, Solder Terminal
3M
MCH-068TAL-01B-TR30
PCMCIA Connector, 68 Contact(s), 2 Row(s), Male, Right Angle, Solder Terminal
3M
MCH-068TAL-01C-TR30
PCMCIA Connector, 68 Contact(s), 2 Row(s), Male, Right Angle, Solder Terminal
3M
MCH-068TAL-01D-TR30
PCMCIA Connector, 68 Contact(s), 2 Row(s), Male, Right Angle, Solder Terminal
3M
©2020 ICPDF网 联系我们和版权申明