概述
数据手册MHL19338N 概述
PCS Band RF Linear LDMOS Amplifier PCS频段射频线性LDMOS放大器
MHL19338N 数据手册
通过下载MHL19338N数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Document Number: MHL19338N
Rev. 6, 8/2006
Freescale Semiconductor
Technical Data
PCS Band
RF Linear LDMOS Amplifier
MHL19338N
Designed for ultra-linear amplifier applications in 50 ohm systems operating in
the PCS frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital modulation systems, such as TDMA and
CDMA.
1900-2000 MHz
4.0 W, 30 dB
RF LINEAR LDMOS AMPLIFIER
• Third Order Intercept: 46 dBm Typ
• Power Gain: 30 dB Typ (@ f = 1960 MHz)
• Input VSWR v 1.5:1
Features
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
• N Suffix Indicates Lead-Free Terminations
CASE 301AP-02, STYLE 1
Table 1. Absolute Maximum Ratings (T = 25°C unless otherwise noted)
C
Rating
Symbol
Value
30
Unit
Vdc
dBm
°C
DC Supply Voltage
V
DD
RF Input Power
P
+10
in
Storage Temperature Range
T
stg
- 40 to +100
- 20 to +100
Operating Case Temperature Range
T
°C
C
Table 2. Electrical Characteristics (V = 28 Vdc, T = 25°C; 50 Ω System)
DD
C
Characteristic
Symbol
Min
—
Typ
500
30
Max
525
32
Unit
mA
dB
Supply Current
Power Gain
I
DD
(f = 1960 MHz)
G
p
G
F
29
—
Gain Flatness
(f = 1900 - 2000 MHz)
(f = 1950 MHz)
0.1
36
0.4
—
dB
Power Output @ 1 dB Compression
P1dB
ITO
NF
35
45
—
dBm
dBm
dB
Third Order Intercept (f1 = 1950 MHz, f2 = 1955 MHz)
Noise Figure (f = 2000 MHz)
46
—
4.2
4.5
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
PACKAGE DIMENSIONS
2X
Q
A
A
M
M
M
A
0.008 (0.20)
T
S
G
B
S
M
M
T A
0.020 (0.51)
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION "F" TO CENTER OF LEADS.
R
S
J
1
2
3
4
K
INCHES
DIM MIN MAX
MILLIMETERS
MIN
44.70
34.80
6.22
MAX
45.21
35.31
6.73
W
A
B
C
D
E
F
1.760
1.370
0.245
0.017
0.080
1.780
1.390
0.265
0.023
0.100
4X D
N
M
M
0.020 (0.51)
T
B
0.43
2.03
0.58
2.54
L
H
0.086 BSC
1.650 BSC
1.290 BSC
2.18 BSC
41.91 BSC
32.77 BSC
G
H
J
F
0.266
0.125
0.280
0.165
6.76
3.18
7.11
4.19
E
K
L
0.990 BSC
0.390 BSC
25.15 BSC
9.91 BSC
T
N
P
Q
R
S
W
0.008
0.013
0.132
0.555
0.465
0.20
0.33
3.35
C
0.118
0.535
0.445
3.00
13.59
11.30
SEATING
PLANE
14.10
11.81
4X P
M
0.020 (0.51)
T
0.090 BSC
2.29 BSC
STYLE 1:
PIN 1. RF INPUT
2. VDD1
3. VDD2
4. RF OUTPUT
CASE: GROUND
CASE 301AP-02
ISSUE E
MHL19338N
RF Device Data
Freescale Semiconductor
2
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Document Number: MHL19338N
Rev. 6, 8/2006
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