MMA20312BV [FREESCALE]
Heterojunction Bipolar Transistor Technology; 异质结双极晶体管技术
| 型号： | MMA20312BV |
| 厂家： | 
Freescale |
| 描述： | Heterojunction Bipolar Transistor Technology |
| 文件： | 总18页 (文件大小：1043K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMA20312BV
Rev. 1, 12/2011
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMA20312BVT1
High Efficiency/Linearity Amplifier
The MMA20312BV is a 2--stage high efficiency, Class AB InGaP HBT
amplifier designed for use as a linear driver amplifier in wireless base station
applications as well as an output stage in femtocell or repeater applications. It
is suitable for applications with frequencies from 1800 to 2200 MHz such as
CDMA, TD--SCDMA, PCS, UMTS and LTE at operating voltages from 3 to
5 Volts. The amplifier is housed in a cost--effective, surface mount QFN plastic
package.
1800--2200 MHz, 27.2 dB
30.5 dBm
InGaP HBT
•
Typical Performance: VCC = 5 Volts, ICQ = 70 mA, Pout = 17 dBm
G
ACPR
(dBc)
PAE
(%)
ps
Frequency
1880 MHz
1920 MHz
2010 MHz
2025 MHz
2140 MHz
(dB)
29.0
29.0
27.4
26.8
27.0
Test Signal
TD--SCDMA
TD--SCDMA
TD--SCDMA
TD--SCDMA
W--CDMA
--47.4
--46.7
--52.0
--50.0
--51.7
9.1
9.0
9.3
9.5
9.4
CASE 2131--01
QFN 3x3
PLASTIC
Features
•
•
•
•
•
•
•
•
Frequency: 1800--2200 MHz
P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)
Active Bias Control (adjustable externally)
Single 3 to 5 Volt Supply
Cost--effective QFN Surface Mount Package
In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Rating
Supply Voltage
Symbol
Value
Unit
V
1800
MHz
2140
MHz
2200
MHz
Characteristic
Symbol
Unit
V
6
550
CC
CC
Small--Signal Gain
(S21)
G
28.8
26.4
25.5
dB
p
Supply Current
I
mA
dBm
°C
RF Input Power
P
14
in
Input Return Loss
(S11)
IRL
ORL
P1dB
--17.6 --10.9
-- 9 . 7
dB
dB
Storage Temperature Range
T
stg
--65 to +150
150
(2)
Output Return Loss
(S22)
--20.3 --14.7 --13.7
30.5 30.5
Junction Temperature
T
J
°C
2. For reliable operation, the junction temperature should not
Power Output @ 1dB
Compression
30.5 dBm
exceed 150°C.
1. V
= V
= V
= 5 Vdc, T = 25°C, 50 ohm system, CW
BIAS A
CC1
CC2
Application Circuit
Table 3. Thermal Characteristics
(3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
52
°C/W
JC
Case Temperature 86°C, V = V
= V
= 5 Vdc
BIAS
CC1
CC2
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
Table 4. Electrical Characteristics (V
= V
= V
= 5 Vdc, 2140 MHz, T = 25°C, 50 ohm system, in Freescale W--CDMA
BIAS A
CC1
CC2
Application Circuit)
Characteristic
Symbol
Min
23.6
—
Typ
27.2
--10.7
--15.5
28.2
44.5
3.3
Max
—
Unit
dB
(1)
Small--Signal Gain (S21)
G
p
Input Return Loss (S11)
IRL
ORL
P1dB
OIP3
NF
—
dB
Output Return Loss (S22)
—
—
dB
Power Output @ 1dB Compression, CW
—
—
dBm
dBm
dB
Third Order Output Intercept Point, Two--Tone CW
Noise Figure
—
—
—
—
(1,2)
Supply Current
I
62.5
—
70
77
—
mA
V
CQ
(2)
Supply Voltage
V
5
CC
Table 5. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Class
0, rated to 150 V
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
A
III
Table 6. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
1. Specified data is based on performance of soldered down part in W--CDMA application circuit.
2. For reliable operation, the junction temperature should not exceed 150°C.
V
V
V
CC1
BA2
CC1
V
V
V
BA2 CC1 CC1
RF
RF
V
out
out
BA1
12 11 10
BIAS
CIRCUIT
V
1
2
3
9
8
7
RF
BA1
out
V
V
RF
BIAS
BIAS
out
V
RF
CC2
in
4
5
6
RF
V
in
CC2
GND GND GND
GND
GND
GND
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
2
V
BIAS
Z5
V
CC1
R1
R2
C8
Z4
C17
C18
C19
12
11
10
1
2
9
8
C5
BIAS
CIRCUIT
RF
OUTPUT
Z2
Z3
C4
C3
RF
INPUT
Z1
3
7
C1
Z6
L1
C2
V
CC2
4
5
6
C13
C16
Z1
Z2
Z3
0.250″ x 0.030″ Microstrip
0.035″ x 0.030″ Microstrip
0.283″ x 0.030″ Microstrip
Z4
Z5
Z6
0.080″ x 0.030″ Microstrip
0.155″ x 0.010″ Microstrip
0.045″ x 0.010″ Microstrip
Figure 3. MMA20312BV Test Circuit Schematic — TD--SCDMA, 5 Volt Operation
Table 7. MMA20312BV Test Circuit Component Designations and Values — TD--SCDMA, 5 Volt Operation
Part
Description
22 pF Chip Capacitors
Part Number
06033J220GBS
Manufacturer
AVX
C1, C5
C2
1.8 pF Chip Capacitor
2.2 pF Chip Capacitor
5.6 pF Chip Capacitor
Components Not Placed
1 μF Chip Capacitors
10 pF Chip Capacitor
10 μF Chip Capacitors
0.1 μF Chip Capacitor
1.8 nH Chip Inductor
330 Ω Chip Resistor
1.5 kΩ Chip Resistor
06035J1R8BBS
06035J2R2BBS
06035J5R6BBS
AVX
AVX
AVX
C3
C4
C6, C7, C9
C8, C18
C13
GRM188R61A105KA61
06035J100GBS
Murata
AVX
C16, C19
C17
GRM188R60J106ME47
GRM188R71H104KA93
LL1608--FS1N8S
RR0816Q--331--D
RR0816Q--152--D
FR408
Murata
Murata
TOKO
Susumu
Susumu
Isola
L1
R1
R2
PCB
0.014″, ε = 3.7
r
Note: Component numbers C6, C7 and C9 are labeled on board but not placed. C10, C11, C12, C14 and C15 are intentionally omitted.
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
3
C8
C19
R1
R2
C7*
C17 C18
C9*
C6*
RF
OUT
RF
IN
C5
L1
C3
C4
C1
C2
C13
C16
QFN 3x3--12B
Rev. 0
(1) V
[Board] supplies V
, V
BA1
and V
[Device].
BIAS
BIAS
BA2
Note: Component numbers C6*, C7* and C9* are labeled on board but not placed.
Figure 4. MMA20312BV Test Circuit Component Layout — TD--SCDMA, 5 Volt Operation
Table 7. MMA20312BV Test Circuit Component Designations and Values — TD--SCDMA, 5 Volt Operation
Part
Description
22 pF Chip Capacitors
Part Number
06033J220GBS
Manufacturer
AVX
C1, C5
C2
1.8 pF Chip Capacitor
2.2 pF Chip Capacitor
5.6 pF Chip Capacitor
Components Not Placed
1 μF Chip Capacitors
10 pF Chip Capacitor
10 μF Chip Capacitors
0.1 μF Chip Capacitor
1.8 nH Chip Inductor
330 Ω Chip Resistor
1.5 kΩ Chip Resistor
06035J1R8BBS
06035J2R2BBS
06035J5R6BBS
AVX
AVX
AVX
C3
C4
C6, C7, C9
C8, C18
C13
GRM188R61A105KA61
06035J100GBS
Murata
AVX
C16, C19
C17
GRM188R60J106ME47
GRM188R71H104KA93
LL1608--FS1N8S
RR0816Q--331--D
RR0816Q--152--D
FR408
Murata
Murata
TOKO
Susumu
Susumu
Isola
L1
R1
R2
PCB
0.014″, ε = 3.7
r
Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted.
(Test Circuit Component Designations and Values table repeated for reference.)
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS — TD--SCDMA
0
-- 5
35
30
-- 4 0 °C
25°C
-- 4 0 °C
85°C
-- 10
-- 15
-- 20
-- 25
-- 30
-- 3 5
25
20
15
10
5
85°C
25°C
V
= V
= V
= 5 Vdc
BIAS
V
= V
= V
= 5 Vdc
BIAS
CC1
CC2
CC1
CC2
0
1500
1750
2000
2250
2500
2750
1500
1750
2000
2250
2500
2750
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. S11 versus Frequency versus
Temperature
Figure 6. S21 versus Frequency versus
Temperature
0
-- 5
-- 4 0 °C
85°C
-- 10
-- 15
-- 20
-- 25
-- 30
-- 3 5
25°C
V
= V
= V
= 5 Vdc
BIAS
CC1
CC2
1500
1750
2000
2250
2500
2750
f, FREQUENCY (MHz)
Figure 7. S22 versus Frequency versus
Temperature
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — TD--SCDMA
200
180
160
140
120
100
80
-- 10
-- 15
-- 20
-- 25
-- 30
-- 35
V
= V
= V
= 5 Vdc
BIAS
CC1
CC2
f = 2017.5 MHz
25°C
85°C
I
CC
-- 4 0 °C
-- 40
-- 45
60
85°C
ACPR
40
-- 50
-- 55
-- 4 0 °C
20
0
23
25°C
19
-- 60
7
9
11
13
15
17
21
P
, OUTPUT POWER (dBm)
out
Figure 8. ACPR versus Collector Current versus
Output Power versus Temperature
30
29
28
27
26
25
24
50
45
40
35
30
25
20
15
10
Gain
-- 4 0 °C
25°C
85°C
V
= V
= V
= 5 Vdc
BIAS
CC1
CC2
-- 4 0 °C
85°C
f = 2017.5 MHz
23
22
PAE
21
20
5
0
25°C
7
9
11
13
15
17
19
21
23
P
, OUTPUT POWER (dBm)
out
Figure 9. Power Gain versus Power Added
Efficiency versus Output Power versus Temperature
31
V
= V
= V
= 5 Vdc
BIAS
CC1
CC2
30
29
28
27
26
-- 4 0 °C
85°C
25°C
25
24
1800
1850
1900
1950
2000
2050
f, FREQUENCY (MHz)
Figure 10. P1dB versus Frequency versus
Temperature, CW
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
6
V
BIAS
Z5
V
CC1
R1
R2
C8
Z4
C9
C17
C18
C19
12
11
10
1
2
9
8
C5
BIAS
CIRCUIT
RF
OUTPUT
Z2
Z3
C4
C3
RF
INPUT
Z1
3
7
C1
Z6
L1
C2
V
CC2
4
5
6
C13
C16
Z1
Z2
Z3
0.218″ x 0.030″ Microstrip
0.068″ x 0.030″ Microstrip
0.250″ x 0.030″ Microstrip
Z4
Z5
Z6
0.080″ x 0.030″ Microstrip
0.155″ x 0.010″ Microstrip
0.045″ x 0.010″ Microstrip
+
Figure 11. MMA20312BV Test Circuit Schematic — W--CDMA, 5 Volt Operation
Table 8. MMA20312BV Test Circuit Component Designations and Values — W--CDMA, 5 Volt Operation
Part
Description
22 pF Chip Capacitors
Part Number
06033J220GBS
Manufacturer
AVX
C1, C5
C2, C3
C4
1.8 pF Chip Capacitors
5.6 pF Chip Capacitor
Components Not Placed
1 μF Chip Capacitors
100 pF Chip Capacitor
10 pF Chip Capacitor
10 μF Chip Capacitors
0.1 μF Chip Capacitor
1.8 nH Chip Inductor
330 Ω Chip Resistor
1500 Ω Chip Resistor
06035J1R8BBS
06035J5R6BBS
AVX
AVX
C6, C7
C8, C18
C9
GRM188R61A105KA61
GRM1885C1H101JA01
06035J100GBS
Murata
Murata
AVX
C13
C16, C19
C17
GRM188R60J106ME47
GRM188R71H104KA93
LL1608--FS1N8S
Murata
Murata
TOKO
Susumu
Susumu
Isola
L1
R1
RR0816Q--331--D
RR0816Q--152−D
FR408
R2
PCB
0.014″, ε = 3.7
r
Note: Component numbers C6 and C7 are labeled on board but not placed. C10, C11, C12, C14 and C15 are intentionally omitted.
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
7
C8
C19
R1
R2
C7*
C9
C17 C18
C6*
RF
RF
OUT
IN
C5
L1
C3
C4
C1
C2
C13
C16
QFN 3x3--12B
Rev. 0
(1) V
[Board] supplies V
, V
BA1
and V
[Device].
BIAS
BIAS
BA2
Note: Component numbers C6* and C7* are labeled on board but not placed.
Figure 12. MMA20312BV Test Circuit Component Layout — W--CDMA, 5 Volt Operation
Table 8. MMA20312BV Test Circuit Component Designations and Values — W--CDMA, 5 Volt Operation
Part
Description
22 pF Chip Capacitors
Part Number
06033J220GBS
Manufacturer
AVX
C1, C5
C2, C3
C4
1.8 pF Chip Capacitors
5.6 pF Chip Capacitor
Components Not Placed
1 μF Chip Capacitors
100 pF Chip Capacitor
10 pF Chip Capacitor
10 μF Chip Capacitors
0.1 μF Chip Capacitor
1.8 nH Chip Inductor
330 Ω Chip Resistor
1500 Ω Chip Resistor
06035J1R8BBS
06035J5R6BBS
AVX
AVX
C6, C7
C8, C18
C9
GRM188R61A105KA61
GRM1885C1H101JA01
06035J100GBS
Murata
Murata
AVX
C13
C16, C19
C17
GRM188R60J106ME47
GRM188R71H104KA93
LL1608--FS1N8S
Murata
Murata
TOKO
Susumu
Susumu
Isola
L1
R1
RR0816Q--331--D
RR0816Q--152−D
FR408
R2
PCB
0.014″, ε = 3.7
r
Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted.
(Test Circuit Component Designations and Values table repeated for reference.)
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
8
TYPICAL CHARACTERISTICS — W--CDMA
200
180
160
140
120
100
80
-- 10
-- 15
-- 20
-- 25
-- 30
-- 35
V
= V
= V
= 5 Vdc
BIAS
CC1
CC2
f = 2140 MHz
I
CC
-- 40
-- 45
60
ACPR
40
-- 50
-- 55
20
0
24
-- 60
8
10
12
14
16
18
20
22
P
, OUTPUT POWER (dBm)
out
Figure 13. ACPR versus Collector Current
versus Output Power
30
29
28
27
26
25
24
50
45
40
35
30
25
20
15
10
V
= V
= V
= 5 Vdc
BIAS
CC1
CC2
f = 2140 MHz
Gain
PAE
23
22
21
20
5
0
8
10
12
14
16
18
20
22
24
P
, OUTPUT POWER (dBm)
out
Figure 14. Power Gain versus Power Added
Efficiency versus Output Power
31
30
29
28
27
26
V
= V
= V
= 5 Vdc
BIAS
CC1
CC2
25
24
2100
2120
2140
2160
2180
2200
f, FREQUENCY (MHz)
Figure 15. P1dB versus Frequency, CW
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
9
V
BIAS
Z5
V
CC1
R1
R2
C8
Z4
C9
C17
12
11
10
1
2
9
8
C5
BIAS
CIRCUIT
RF
OUTPUT
Z2
Z3
C4
C3
RF
INPUT
Z1
3
7
C1
Z6
L1
C2
V
CC2
4
5
6
C13
C16
Z1
Z2
Z3
0.250″ x 0.030″ Microstrip
0.124″ x 0.030″ Microstrip
0.195″ x 0.030″ Microstrip
Z4
Z5
Z6
0.080″ x 0.030″ Microstrip
0.048″ x 0.010″ Microstrip
0.045″ x 0.010″ Microstrip
Figure 16. MMA20312BV Test Circuit Schematic — IS--95, 3.3 Volt Operation
Table 9. MMA20312BV Test Circuit Component Designations and Values — IS--95, 3.3 Volt Operation
Part
Description
22 pF Chip Capacitors
Part Number
06033J220GBS
Manufacturer
AVX
C1, C5, C9
C2
C3
C4
2.2 pF Chip Capacitor
2.4 pF Chip Capacitor
4.7 pF Chip Capacitor
Components Not Placed
1 μF Chip Capacitors
10 pF Chip Capacitor
4.7 μF Chip Capacitor
1.5 nH Chip Inductor
82 Ω Chip Resistor
06035J2R2BBS
06035J2R4BBS
06035J4R7BBS
AVX
AVX
AVX
C6, C7, C18, C19
C8, C17
C13
C16
L1
GRM188R61A105KA61
06035J100GBS
Murata
AVX
GRM188R60J106ME47
LL1608--FS1N5S
RR0816Q--820--D
RR0816Q--511--D
FR408
Murata
TOKO
Susumu
Susumu
Isola
R1
R2
510 Ω Chip Resistor
PCB
0.014″, ε = 3.7
r
Note: Component numbers C6, C7, C18 and C19 are labeled on board but not placed. C10, C11, C12, C14 and C15 are intentionally omitted.
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
10
C8
C19*
R1
R2
C7*
C18*
C17
C3
C9
C6*
RF
RF
OUT
IN
C5
L1
C4
C1
C2
C13
C16
QFN 3x3--12B
Rev. 0
(1) V
[Board] supplies V
, V
BA1
and V
[Device].
BIAS
BIAS
BA2
Note: Component numbers C6*, C7*, C18* and C19* are labeled on board but not placed.
Figure 17. MMA20312BV Test Circuit Component Layout — IS--95, 3.3 Volt Operation
Table 9. MMA20312BV Test Circuit Component Designations and Values — IS--95, 3.3 Volt Operation
Part
Description
22 pF Chip Capacitors
Part Number
06033J220GBS
Manufacturer
AVX
C1, C5, C9
C2
C3
C4
2.2 pF Chip Capacitor
2.4 pF Chip Capacitor
4.7 pF Chip Capacitor
Components Not Placed
1 μF Chip Capacitors
10 pF Chip Capacitor
4.7 μF Chip Capacitor
1.5 nH Chip Inductor
82 Ω Chip Resistor
06035J2R2BBS
06035J2R4BBS
06035J4R7BBS
AVX
AVX
AVX
C6, C7, C18, C19
C8, C17
C13
C16
L1
GRM188R61A105KA61
06035J100GBS
Murata
AVX
GRM188R60J106ME47
LL1608--FS1N5S
RR0816Q--820--D
RR0816Q--511--D
FR408
Murata
TOKO
Susumu
Susumu
Isola
R1
R2
510 Ω Chip Resistor
PCB
0.014″, ε = 3.7
r
Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted.
(Test Circuit Component Designations and Values table repeated for reference.)
MMA20312BVT1
11
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — IS--95
200
180
160
140
120
100
80
-- 10
-- 15
-- 20
-- 25
-- 30
-- 35
V
= V
= V
= 3.3 Vdc
BIAS
CC1
CC2
f = 1960 MHz
Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
I
CC
-- 40
-- 45
60
40
ACPR
-- 50
-- 55
20
0
22
-- 60
8
10
12
14
16
18
20
P
, OUTPUT POWER (dBm)
out
Figure 18. ACPR versus Collector Current
versus Output Power
30
29
28
27
26
25
24
50
45
40
35
30
25
20
15
10
V
= V
= V
= 3.3 Vdc
BIAS
CC1
CC2
Gain
PAE
f = 1960 MHz
Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
23
22
21
20
5
0
8
10
12
14
16
18
20
22
P
, OUTPUT POWER (dBm)
out
Figure 19. Power Gain versus Power Added
Efficiency versus Output Power
31
30
29
28
27
26
V
= V
= V
= 3.3 Vdc
BIAS
CC1
CC2
25
24
1800
1840
1880
1920
1960
2000
f, FREQUENCY (MHz)
Figure 20. P1dB versus Frequency, CW
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
12
3.00
0.70
2.00
0.30
3.40
0.50
1.6 x 1.6 Solder Pad
with Thermal Via
Structure
Figure 21. PCB Pad Layout for QFN 3x3
MA02
YWZ
Figure 22. Product Marking
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
13
PACKAGE DIMENSIONS
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
14
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
15
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
16
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
•
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
.s2p File
Development Tools
•
•
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Aug. 2011
Dec. 2011
•
Initial Release of Data Sheet
Updated minimum operating voltage from 3.3 V to 3 V to reflect actual device capability, p. 1
All references to “V ” in the data sheet tables, test circuit schematics and component layouts is
•
•
CTRL
replaced with “V
”. V
is the supply voltage which sets the internal bias conditions via pins 1, 2, and
BIAS
BIAS
12, p. 1--3, 5--7, 9, 10, 12. Footnote “(1) V
test circuit component layouts, p. 4, 8, 11.
[Board] supplies V
, V
BA1
and V [Device]” added to
BIAS
BIAS
BA2
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
17
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Document Number: MMA20312BV
Rev. 1, 12/2011
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