MMG3015NT1 [FREESCALE]
Heterojunction Bipolar Transistor Technology (InGaP HBT); 异质结双极晶体管技术（的InGaP HBT ）
| 型号： | MMG3015NT1 |
| 厂家： | 
Freescale |
| 描述： | Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| 文件： | 总15页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMG3015NT1
Rev. 1, 4/2008
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMG3015NT1
Broadband High Linearity Amplifier
The MMG3015NT1 is a General Purpose Amplifier that is internally
Input and output matched. It is designed for a broad range of Class A,
small-signal, high linearity, general purpose applications. It is suitable for
applications with frequencies from 0 to 6000 MHz such as Cellular, PCS,
BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF.
0-6000 MHz, 15.5 dB
20.5 dBm
Features
InGaP HBT
• Frequency: 0-6000 MHz
• P1dB: 20.5 dBm @ 900 MHz
• Small Signal Gain: 15.5 dB @ 900 MHz
• Third Order Output Intercept Point: 36 dBm @ 900 MHz
• Single 5 Volt Supply
1
2
• Active Bias
3
• Internally Matched to 50 Ohms
• Low Cost SOT-89 Surface Mount Package
• RoHS Compliant
CASE 1514-02, STYLE 1
SOT-89
PLASTIC
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Characteristic
Symbol 900 2140 3500 Unit
Rating
Supply Voltage
Symbol
Value
Unit
V
MHz MHz
MHz
V
7
300
CC
CC
Small-Signal Gain
(S21)
G
15.5 14.5
12.5
dB
dB
dB
p
Supply Current
I
mA
dBm
°C
RF Input Power
P
12
in
Input Return Loss
(S11)
IRL
ORL
P1db
IP3
-15
-13
-19
-9
-19
-7
Storage Temperature Range
T
stg
-65 to +150
150
(2)
Junction Temperature
T
°C
Output Return Loss
(S22)
J
2. For reliable operation, the junction temperature should not
exceed 150°C.
Power Output @1dB
Compression
20.5 20.5
18.5 dBm
30.5 dBm
Third Order Output
Intercept Point
36
33.5
1. V = 5 Vdc, T = 25°C, 50 ohm system
CC
C
Table 3. Thermal Characteristics (V = 5 Vdc, I = 95 mA, T = 25°C)
CC
CC
C
(3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
41.5
°C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
Table 4. Electrical Characteristics (V = 5 Vdc, 900 MHz, T = 25°C, 50 ohm system, in Freescale Application Circuit)
CC
C
Characteristic
Symbol
Min
14
—
Typ
15.5
-15
-13
20.5
36
Max
—
Unit
dB
Small-Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
G
p
IRL
ORL
P1dB
IP3
—
dB
—
—
dB
Power Output @ 1dB Compression
Third Order Output Intercept Point
Noise Figure
—
—
dBm
dBm
dB
—
—
NF
—
5.6
95
—
(1)
Supply Current
I
80
—
120
—
mA
V
CC
(1)
Supply Voltage
V
5
CC
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3015NT1
RF Device Data
Freescale Semiconductor
2
Table 5. Functional Pin Description
2
Pin
Pin Function
Number
1
2
3
RF
in
Ground
RF /DC Supply
out
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22-A114)
Machine Model (per EIA/JESD 22-A115)
Charge Device Model (per JESD 22-C101)
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
MMG3015NT1
RF Device Data
Freescale Semiconductor
3
50 OHM TYPICAL CHARACTERISTICS
0
18
16
14
12
T
= 85°C
−40°C
C
25°C
−5
−10
−15
−20
S22
S11
10
8
V
= 5 Vdc
= 95 mA
CC
V
= 5 Vdc
CC
I
CC
−25
0
1
2
3
4
5
6
3.5
4
0
1
2
3
4
5
6
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 2. Small-Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Loss versus Frequency
16
15
14
22
21
20
19
900 MHz
2140 MHz
1960 MHz
2600 MHz
13
12
11
10
18
17
16
15
3500 MHz
V
I
= 5 Vdc
= 95 mA
V
I
= 5 Vdc
= 95 mA
CC
CC
CC
CC
14
0.5
1
1.5
2
2.5
3
10
12
14
16
18
20
22
P
, OUTPUT POWER (dBm)
out
f, FREQUENCY (GHz)
Figure 4. Small-Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
38
36
34
160
140
120
100
80
32
30
60
40
V
= 5 Vdc
= 95 mA
CC
28
26
I
CC
1 MHz Tone Spacing
20
0
0
1
2
3
4
5
6
0
1
2
3
V
, COLLECTOR VOLTAGE (V)
CC
f, FREQUENCY (GHz)
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
MMG3015NT1
RF Device Data
Freescale Semiconductor
4
50 OHM TYPICAL CHARACTERISTICS
38
38
37
36
35
37
36
35
34
33
V
= 5 Vdc
f = 900 MHz
34
CC
f = 900 MHz
1 MHz Tone Spacing
1 MHz Tone Spacing
33
−40
4.8
4.9
V
5
5.1
5.2
−20
0
20
40
60
80
100
, COLLECTOR VOLTAGE (V)
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
CC
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
5
4
3
10
10
10
−20
−30
−40
−50
−60
−70
V
= 5 Vdc
= 95 mA
CC
I
CC
f = 900 MHz
1 MHz Tone Spacing
120
125
130
135
140
145
150
5
10
15
20
P
, OUTPUT POWER (dBm)
out
T , JUNCTION TEMPERATURE (°C)
J
NOTE: The MTTF is calculated with V = 5 Vdc, I = 95 mA
CC CC
Figure 10. Third Order Intermodulation versus
Output Power
Figure 11. MTTF versus Junction Temperature
−20
8
V
= 5 Vdc, I = 95 mA, f = 2140 MHz
CC
CC
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 8.5 dB @
0.01% Probability (CCDF)
−30
−40
6
4
2
0
−50
−60
−70
V
= 5 Vdc
= 95 mA
CC
I
CC
0
1
2
3
4
2
4
6
8
10
12
14
16
18
20
f, FREQUENCY (GHz)
P
, OUTPUT POWER (dBm)
out
Figure 12. Noise Figure versus Frequency
Figure 13. Single-Carrier W-CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3015NT1
RF Device Data
Freescale Semiconductor
5
50 OHM APPLICATION CIRCUIT: 40-800 MHz
V
SUPPLY
R1
C3
C4
Z5
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z3
Z4
Z1
Z2
C1
C2
CC
Z1, Z5
Z2
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Figure 14. 50 Ohm Test Circuit Schematic
20
10
S21
R1
0
C4
C3
L1
−10
−20
−30
−40
S11
C2
C1
S22
V
= 5 Vdc
= 95 mA
CC
MMG30XX
Rev 2
I
CC
0
200
400
f, FREQUENCY (MHz)
600
800
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
0.01 μF Chip Capacitors
Part Number
C0603C103J5RAC
C0603C104J5RAC
C0603C105J5RAC
BK2125HM471-T
CRCW06030000FKEA
Manufacturer
Kemet
C1, C2
C3
0.1 μF Chip Capacitor
1 μF Chip Capacitor
Kemet
C4
Kemet
L1
470 nH Chip Inductor
0 W, 1/10 W Chip Resistor
Taiyo Yuden
Vishay
R1
MMG3015NT1
RF Device Data
Freescale Semiconductor
6
50 OHM APPLICATION CIRCUIT: 800-3600 MHz
V
SUPPLY
R1
C3
C4
Z5
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z3
Z4
Z1
Z2
C1
C2
CC
Z1, Z5
Z2
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Figure 17. 50 Ohm Test Circuit Schematic
30
20
10
R1
S21
C4
C3
L1
0
C2
C1
S22
S11
−10
−20
−30
V
= 5 Vdc
= 95 mA
CC
MMG30XX
Rev 2
I
CC
800
1200
1600
2000
2400
2800
3200
3600
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
150 pF Chip Capacitors
Part Number
C0603C151J5RAC
C0603C104J5RAC
C0603C105J5RAC
HK160856NJ-T
Manufacturer
Kemet
C1, C2
C3
0.1 μF Chip Capacitor
1 μF Chip Capacitor
56 nH Chip Inductor
Kemet
C4
Kemet
L1
Taiyo Yuden
Vishay
R1
0 W, 1/10 W Chip Resistor
CRCW06030000FKEA
MMG3015NT1
RF Device Data
Freescale Semiconductor
7
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S-Parameters (V = 5 Vdc, I = 95 mA, T = 25°C, 50 Ohm System)
CC
CC
C
S
S
S
S
22
11
21
12
f
MHz
|S
|
11
∠ φ
|S
|
21
∠ φ
|S
|
12
∠ φ
|S |
22
∠ φ
200
250
0.28
0.28
0.27
0.27
0.27
0.26
0.26
0.26
0.26
0.26
0.25
0.25
0.25
0.25
0.25
0.24
0.24
0.24
0.24
0.24
0.24
0.24
0.24
0.24
0.24
0.23
0.23
0.23
0.23
0.23
0.24
0.25
0.26
0.28
0.28
0.28
0.28
0.29
0.29
0.29
0.29
0.29
0.29
174.23
172.92
171.92
170.57
169.49
168.53
167.16
165.92
164.77
163.38
162.57
161.36
160.35
159.29
158.03
157.14
156.02
154.89
153.09
152.30
151.41
150.63
150.09
149.52
149.15
148.71
147.76
146.51
145.11
138.41
132.77
128.41
124.16
119.27
118.39
117.49
116.75
116.03
115.21
114.41
113.69
112.97
112.24
6.17
6.16
6.15
6.14
6.12
6.11
6.10
6.08
6.06
6.05
6.03
6.01
5.99
5.97
5.95
5.93
5.91
5.88
5.83
5.80
5.77
5.75
5.72
5.69
5.67
5.65
5.62
5.60
5.57
5.41
5.23
5.05
4.87
4.69
4.65
4.62
4.59
4.55
4.52
4.48
4.44
4.41
4.37
171.48
169.36
167.25
165.15
163.07
160.97
158.87
156.78
154.73
152.65
150.58
148.53
146.50
144.45
142.41
140.38
138.38
136.37
132.34
130.37
128.39
126.41
124.46
122.50
120.54
118.61
116.65
114.72
112.79
103.23
93.77
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
-2.66
0.06
0.07
0.08
0.09
0.09
0.10
0.11
0.12
0.13
0.14
0.14
0.15
0.16
0.17
0.18
0.18
0.19
0.20
0.21
0.22
0.22
0.23
0.24
0.24
0.25
0.26
0.26
0.27
0.28
0.31
0.35
0.38
0.40
0.43
0.44
0.44
0.45
0.46
0.46
0.47
0.48
0.48
0.49
-43.26
-50.81
-56.75
-62.45
-67.13
-71.09
-74.88
-77.99
-81.75
-85.06
-88.16
-91.28
-93.96
-96.90
-99.99
-102.70
-105.47
-108.27
-114.23
-117.17
-120.26
-123.42
-126.34
-129.61
-132.32
-134.63
-136.77
-138.90
-141.13
-152.46
-163.83
-175.54
172.45
161.50
159.35
157.23
154.83
152.37
150.02
147.68
145.58
143.48
141.43
-3.32
300
-3.93
350
-4.60
400
-5.22
450
-5.85
500
-6.50
550
-7.14
600
-7.76
650
-8.41
700
-9.03
750
-9.64
800
-10.26
-10.88
-11.52
-12.14
-12.78
-13.38
-14.64
-15.28
-15.94
-16.57
-17.17
-17.81
-18.46
-19.07
-19.73
-20.39
-21.04
-24.38
-27.79
-31.33
-35.09
-39.03
-39.86
-40.65
-41.48
-42.33
-43.16
-44.01
-44.83
-45.67
-46.48
850
900
950
1000
1050
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1900
2150
2400
2650
2900
2950
3000
3050
3100
3150
3200
3250
3300
3350
84.48
75.21
66.04
64.24
62.43
60.59
58.77
56.97
55.15
53.36
51.59
49.84
(continued)
MMG3015NT1
RF Device Data
Freescale Semiconductor
8
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S-Parameters (V = 5 Vdc, I = 95 mA, T = 25°C, 50 Ohm System) (continued)
CC
CC
C
S
S
S
S
22
11
21
12
f
MHz
|S
|
11
∠ φ
|S
|
21
∠ φ
|S
|
12
∠ φ
|S |
22
∠ φ
3400
3450
3500
3550
3600
0.29
0.29
0.29
0.29
0.29
111.50
110.37
109.50
108.57
107.57
4.34
4.30
4.27
4.23
4.20
48.07
45.96
44.53
42.83
41.14
0.09
0.09
0.09
0.09
0.09
-47.31
-48.32
-49.01
-49.82
-50.64
0.49
0.50
0.50
0.51
0.52
139.46
137.08
135.57
133.81
132.08
MMG3015NT1
RF Device Data
Freescale Semiconductor
9
1.7
7.62
0.305 diameter
2.49
3.48
0.58
5.33
2.54
1.27
1.27
0.86
0.64
3.86
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL
AND RF PERFORMANCE.
Recommended Solder Stencil
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM
PITCH.
Figure 20. Recommended Mounting Configuration
MMG3015NT1
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
MMG3015NT1
RF Device Data
Freescale Semiconductor
11
MMG3015NT1
RF Device Data
Freescale Semiconductor
12
MMG3015NT1
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3100: General Purpose Amplifier Biasing
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Aug. 2007
Apr. 2008
•
•
Initial Release of Data Sheet
Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings,
p. 1
•
Corrected Fig. 13, Single-Carrier W-CDMA Adjacent Channel Power Ratio versus Output Power y-axis
(ACPR) unit of measure to dBc, p. 5
•
Updated Part Numbers in Tables 8, 9, Component Designations and Values, to latest RoHS compliant
part numbers, p. 6, 7
MMG3015NT1
RF Device Data
Freescale Semiconductor
14
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Document Number: MMG3015NT1
Rev. 1,4/2008
相关型号：
MMG3H21NT1
Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
FREESCALE
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