MPX5999D [FREESCALE]

Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated; 集成硅压力传感器片上信号调节,温度补偿和校准
MPX5999D
型号: MPX5999D
厂家: Freescale    Freescale
描述:

Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
集成硅压力传感器片上信号调节,温度补偿和校准

传感器 换能器 压力传感器 温度补偿
文件: 总8页 (文件大小:165K)
中文:  中文翻译
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MPX5999D  
Rev 5, 05/2005  
Freescale Semiconductor  
Technical Data  
MPX5999D  
Integrated Silicon Pressure Sensor  
On-Chip Signal Conditioned,  
Temperature Compensated and  
Calibrated  
The MPX5999D piezoresistive transducer is a state-of-the-art pressure  
sensor designed for a wide range of applications, but particularly for those  
employing a microcontroller or microprocessor with A/D inputs. This patented,  
single element transducer combines advanced micromachining techniques, thin-  
film metallization and bipolar semiconductor processing to provide an accurate,  
high level analog output signal that is proportional to applied pressure.  
Figure 1 shows a block diagram of the internal circuitry integrated on the  
stand-alone sensing chip.  
SERIES  
INTEGRATED  
PRESSURE SENSOR  
0 to 1000 kPa (0 to 150 psi)  
0.2 to 4.7 V OUTPUT  
Features  
Temperature Compensated Over 0 to 85°C  
Ideally Suited for Microprocessor or Microcontroller-Based Systems  
Patented Silicon Shear Stress Strain Gauge  
Durable Epoxy Unibody Element  
MPX5999D  
CASE 867-08  
ORDERING INFORMATION(1)  
MPX Series  
PIN NUMBERS  
1
2
3
Vout  
GND  
VS  
4
5
6
N/C  
N/C  
N/C  
Device  
Type  
Case  
Type  
Options  
Order Number  
Device Marking  
Basic Element  
Differential  
867 MPX5999D  
MPX5999D  
NOTE: Pins 4, 5, and 6 are internal device  
connections. Do not connect to external  
circuitry or ground. Pin 1 is noted by the  
notch in the lead.  
1. The MPX5999D pressure sensor is available as an element only.  
VS  
Gain Stage #2  
and  
Ground  
Reference  
Shift Circuitry  
Thin Film  
Temperature  
Compensation  
and  
Gain Stage #1  
Sensing  
Element  
Vout  
Pins 4, 5, and 6 are NO CONNECTS  
GND  
Figure 1. Fully Integrated Pressure Sensor Schematic  
© Freescale Semiconductor, Inc., 2005. All rights reserved.  
Table 1. Maximum Ratings(1)  
Rating  
Symbol  
P1max  
Tstg  
Value  
4000  
Unit  
kPa  
°C  
Maximum Pressure(2) (P2 1 Atmosphere)  
Storage Temperature  
–40 to +125  
–40 to +125  
Operating Temperature  
TA  
°C  
1. Extended exposure at the specified limits may cause permanent damage or degradation to the device.  
2. This sensor is designed for applications where P1 is always greater than, or equal to P2. P2 maximum is 500 kPa.  
Table 2. Operating Characteristics (VS = 5.0 Vdc, TA = 25°C unless otherwise noted, P1 > P2. Decoupling circuit shown in  
Figure 4 required to meet electrical specifications.)  
Characteristic  
Symbol  
POP  
VS  
Min  
0
Typ  
Max  
1000  
5.25  
10  
Unit  
kPa  
Pressure Range(1)  
Supply Voltage(2)  
Supply Current  
4.75  
5.0  
7.0  
0.2  
4.7  
4.5  
4.5  
Vdc  
IO  
mAdc  
Vdc  
Zero Pressure Offset(3)  
Full Scale Output(4)  
Full Scale Span(5)  
Sensitivity  
(0 to 85°C)  
(0 to 85°C)  
(0 to 85°C)  
Voff  
VFSO  
VFSS  
V/P  
0.088  
4.587  
0.313  
4.813  
Vdc  
Vdc  
mV/kPa  
%VFSS  
ms  
Accuracy(6)  
(0 to 85°C)  
2.5  
Response Time(7)  
tR  
1.0  
0.1  
20  
Output Source Current at Full Scale Output  
Warm-Up Time(8)  
IO+  
mAdc  
ms  
1. 1.0 kPa (kiloPascal) equals 0.145 psi.  
2. Device is ratiometric within this specified excitation range.  
3. Offset (Voff) is defined as the output voltage at the minimum rated pressure.  
4. Full Scale Output (VFSO) is defined as the output voltage at the maximum or full rated pressure.  
5. Full Scale Span (VFSS) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the  
minimum rated pressure.  
6. Accuracy (error budget) consists of the following:  
• Linearity:  
Output deviation from a straight line relationship with pressure over the specified pressure range.  
Temperature Hysteresis: Output deviation at any temperature within the operating temperature range, after the temperature is cycled to  
and from the minimum or maximum operating temperature points, with zero differential pressure applied.  
• Pressure Hysteresis:  
Output deviation at any pressure within the specified range, when this pressure is cycled to and from the  
minimum or maximum rated pressure, at 25°C.  
TcSpan:  
TcOffset:  
Output deviation over the temperature range of 0° to 85°C, relative to 25°C.  
Output deviation with minimum rated pressure applied, over the temperature range of 0° to 85°C, relative to 25°C.  
• Variation from Nominal: The variation from nominal values, for Offset or Full Scale Span, as a percent of VFSS, at 25°C.  
7. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a  
specified step change in pressure.  
8. Warm-up Time is defined as the time required for the device to meet the specified output voltage after the pressure has been stabilized.  
Table 3. Mechanical Characteristics  
Characteristics  
Weight, Basic Element (Case 867)  
Typ  
Unit  
4.0  
grams  
MPX5999D  
Sensors  
Freescale Semiconductor  
2
ON-CHIP TEMPERATURE COMPENSATION, CALIBRATION AND SIGNAL CONDITIONING  
Figure 2 shows the sensor output signal relative to  
pressure input. Typical, minimum, and maximum output  
curves are shown for operation over a temperature range of  
0° to 85°C using the decoupling circuit shown in Figure 4. The  
output will saturate outside of the specified pressure range.  
The performance over temperature is achieved by  
integrating the shear-stress strain gauge, temperature  
compensation, calibration and signal conditioning circuitry  
onto a single monolithic chip.  
environments, while allowing the pressure signal to be  
transmitted to the silicon diaphragm.  
The MPX5999D pressure sensor operating  
characteristics, and internal reliability and qualification tests  
are based on use of dry air as the pressure media. Media  
other than dry air may have adverse effects on sensor  
performance and long-term reliability. Contact the factory for  
information regarding media compatibility in your application.  
Figure 4 shows the recommended decoupling circuit for  
interfacing the output of the integrated sensor to the A/D input  
of a microprocessor or microcontroller. Proper decoupling of  
the power supply is recommended.  
Figure 3 illustrates the differential or gauge configuration  
in the basic chip carrier (Case 867). A fluoro silicone gel  
isolates the die surface and wire bonds from harsh  
5.0  
Transfer Function:  
4.5  
V
V
out = VS*(0.000901*P+0.04) ± Error  
S = 5.0 Vdc  
4.0  
3.5  
3.0  
2.5  
Temperature = 0 to 85°C  
TYP  
MAX  
MIN  
2.0  
1.5  
1.0  
0.5  
0
100 200  
400 500  
700 800  
1000 1100  
900  
0
300  
600  
Differential Pressure (kPa)  
Figure 2. Output versus Pressure Differential  
Stainless Steel  
Silicone  
Metal Cover  
Die Coat  
Die  
P1  
Wire Bond  
Lead Frame  
RTV Die  
Bond  
P2  
Thermoplastic Case  
Figure 3. Cross-Sectional Diagrams (not to scale)  
+5 V  
Output  
Vout  
Vs  
IPS  
1.0 µF  
GND  
470 pF  
0.01 µF  
Figure 4. Recommended Power Supply Decoupling and Output Filtering  
(For additional output filtering, please refer to Application Note AN1646)  
MPX5999D  
Sensors  
Freescale Semiconductor  
3
PRESSURE (P1)/VACUUM (P2) SIDE IDENTIFICATION TABLE  
Freescale designates the two sides of the pressure sensor  
Pressure (P1)  
Side Identifier  
as the Pressure (P1) side and the Vacuum (P2) side. The  
Pressure (P1) side is the side containing fluoro silicone gel  
which protects the die from harsh media. The Freescale MPX  
pressure sensor is designed to operate with positive  
differential pressure applied, P1 > P2.  
Part Number  
Case Type  
MPX5999D  
867  
Stainless Steel Cap  
The Pressure (P1) side may be identified by using the  
table below:  
MPX5999D  
Sensors  
Freescale Semiconductor  
4
PACKAGE DIMENSIONS  
C
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
R
POSITIVE PRESSURE  
(P1)  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION -A- IS INCLUSIVE OF THE MOLD  
STOP RING. MOLD STOP RING NOT TO EXCEED  
16.00 (0.630).  
M
B
-A-  
INCHES  
DIM MIN MAX MIN  
MILLIMETERS  
N
L
MAX  
16.00  
13.56  
5.59  
A
B
C
D
F
0.595  
0.630 15.11  
0.534 13.06  
PIN 1  
1
2
3
4
5
6
0.514  
0.200  
0.027  
0.048  
SEATING  
PLANE  
-T-  
0.220  
0.033  
0.064  
5.08  
0.68  
1.22  
0.84  
1.63  
G
J
S
G
J
L
M
N
R
S
0.100 BSC  
2.54 BSC  
F
0.014  
0.695  
0.016 0.36  
0.725 17.65  
0.40  
18.42  
D 6 PL  
0.136 (0.005)  
30˚ NOM  
30˚ NOM  
M
M
T A  
0.475  
0.430  
0.090  
0.495 12.07  
0.450 10.92  
12.57  
11.43  
2.66  
0.105  
2.29  
STYLE 1:  
PIN 1. VOUT  
2. GROUND  
STYLE 2:  
PIN 1. OPEN  
2. GROUND  
STYLE 3:  
PIN 1. OPEN  
2. GROUND  
3. VCC  
4. V1  
5. V2  
3. -VOUT  
4. VSUPPLY  
5. +VOUT  
6. OPEN  
3. +VOUT  
4. +VSUPPLY  
5. -VOUT  
6. VEX  
6. OPEN  
CASE 867-08  
ISSUE N  
BASIC ELEMENT  
MPX5999D  
Sensors  
Freescale Semiconductor  
5
NOTES  
MPX5999D  
Sensors  
6
Freescale Semiconductor  
NOTES  
MPX5999D  
Sensors  
Freescale Semiconductor  
7
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MPX5999D  
Rev. 5  
05/2005  

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