MRF1550FNT1
更新时间：2024-09-18 05:58:05
品牌：FREESCALE
描述：RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
概述
数据手册MRF1550FNT1 概述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强模式横向的MOSFET
MRF1550FNT1 数据手册
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PDF下载Document Number: MRF1550N
Rev. 11, 9/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
MRF1550NT1
MRF1550FNT1
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 175 MHz. The high gain and broadband performance of these devices
make them ideal for large-signal, common source amplifier applications in
12.5 volt mobile FM equipment.
175 MHz, 50 W, 12.5 V
LATERAL N-CHANNEL
BROADBAND
• Specified Performance @ 175 MHz, 12.5 Volts
Output Power — 50 Watts
Power Gain — 12 dB
RF POWER MOSFETs
Efficiency — 50%
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Broadband-Full Power Across the Band: 135-175 MHz
• Broadband Demonstration Amplifier Information Available
CASE 1264-09, STYLE 1
TO-272-6 WRAP
PLASTIC
Upon Request
• 200_C Capable Plastic Package
MRF1550NT1
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
CASE 1264A-02, STYLE 1
TO-272-6
PLASTIC
MRF1550FNT1
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +40
20
Unit
Vdc
Vdc
Adc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
GS
Drain Current — Continuous
I
12
D
(1)
Total Device Dissipation @ T = 25°C
P
165
W
C
D
Derate above 25°C
0.50
W/°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
T
- 65 to +150
200
°C
°C
stg
T
J
(2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
Test Methodology
R
0.75
°C/W
θ
JC
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
T
T
C
J –
1. Calculated based on the formula P
=
D
R
θJC
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
I
I
—
—
—
—
1
μAdc
μAdc
DSS
(V = 60 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
0.5
GSS
(V = 10 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 12.5 Vdc, I = 800 μA)
V
1
—
—
—
3
0.5
1
Vdc
Ω
GS(th)
DS(on)
DS(on)
DS
D
Drain-Source On-Voltage
(V = 5 Vdc, I = 1.2 A)
R
V
—
—
GS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 4.0 Adc)
Vdc
GS
D
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
C
—
—
—
—
—
—
500
250
35
pF
pF
pF
iss
(V = 12.5 Vdc, V = 0 V, f = 1 MHz)
DS
GS
Output Capacitance
C
oss
(V = 12.5 Vdc, V = 0 V, f = 1 MHz)
DS
GS
Reverse Transfer Capacitance
(V = 12.5 Vdc, V = 0 V, f = 1 MHz)
C
rss
DS
GS
RF Characteristics (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
G
—
—
14.5
55
—
—
dB
%
ps
(V = 12.5 Vdc, P = 50 Watts, I
= 500 mA)
= 500 mA)
f = 175 MHz
f = 175 MHz
DD
out
DQ
Drain Efficiency
η
(V = 12.5 Vdc, P = 50 Watts, I
DD
out
DQ
MRF1550NT1 MRF1550FNT1
RF Device Data
Freescale Semiconductor
2
V
GG
+
V
DD
+
C10
C9
C8
R4
C20
C19
C18
C21
R3
R2
L5
C7
N2
Z6 Z7
Z8
L3
Z9
L4
Z10
Z11 C17
R1
C6
RF
OUTPUT
DUT
N1
Z1
C2
L1
Z2
C4
Z3
C5
L2
Z4
Z5
RF
INPUT
C13
C14
C15 C16
C11 C12
C1
C3
B1
C1
C2
C3
C4, C16
C5
C6
C7, C17
C8, C18
C9, C19
C10
C11, C12
C13
C14
C15
C20
L1
Ferroxcube #VK200
L4
L5
N1, N2
R1
R2
R3
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
1 Turn, #26 AWG, 0.240″ ID
3 Turn, #24 AWG, 0.180″ ID
Type N Flange Mounts
180 pF, 100 mil Chip Capacitor
10 pF, 100 mil Chip Capacitor
33 pF, 100 mil Chip Capacitor
24 pF, 100 mil Chip Capacitors
160 pF, 100 mil Chip Capacitor
240 pF, 100 mil Chip Capacitor
300 pF, 100 mil Chip Capacitors
10 μF, 50 V Electrolytic Capacitors
0.1 μF, 100 mil Chip Capacitors
470 pF, 100 mil Chip Capacitor
200 pF, 100 mil Chip Capacitors
22 pF, 100 mil Chip Capacitor
30 pF, 100 mil Chip Capacitor
6.8 pF, 100 mil Chip Capacitor
1,000 pF, 100 mil Chip Capacitor
18.5 nH, Coilcraft #A05T
5.1 Ω, 1/4 W Chip Resistor
39 Ω Chip Resistor (0805)
1 kΩ, 1/8 W Chip Resistor
33 kΩ, 1/4 W Chip Resistor
1.000″ x 0.080″ Microstrip
0.400″ x 0.080″ Microstrip
0.200″ x 0.080″ Microstrip
0.200″ x 0.080″ Microstrip
0.100″ x 0.223″ Microstrip
0.160″ x 0.080″ Microstrip
0.260″ x 0.080″ Microstrip
0.280″ x 0.080″ Microstrip
0.270″ x 0.080″ Microstrip
0.730″ x 0.080″ Microstrip
Z9
Z10
Z11
Board
®
L2
5 nH, Coilcraft #A02T
Glass Teflon , 31 mils
L3
1 Turn, #24 AWG, 0.250″ ID
Figure 1. 135 - 175 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS
0
80
70
60
135 MHz
V
= 12.5 Vdc
DD
−5
175 MHz
50
40
30
20
10
155 MHz
175 MHz
−10
135 MHz
−15
155 MHz
40
V
= 12.5 Vdc
5.0
DD
−20
10
0
0
1.0
2.0
3.0
4.0
6.0
20
30
50
60
70
80
P , INPUT POWER (WATTS)
in
P
, OUTPUT POWER (WATTS)
out
Figure 2. Output Power versus Input Power
Figure 3. Input Return Loss
versus Output Power
MRF1550NT1 MRF1550FNT1
RF Device Data
Freescale Semiconductor
3
TYPICAL CHARACTERISTICS
16
15
14
13
80
175 MHz
70
155 MHz
135 MHz
60
155 MHz
175 MHz
135 MHz
50
40
12
11
10
V
= 12.5 Vdc
70
V
= 12.5 Vdc
70 80
DD
DD
30
10
10
20
30
40
50
60
80
20
30
P , OUTPUT POWER (WATTS)
out
40
50
60
P
, OUTPUT POWER (WATTS)
out
Figure 4. Gain versus Output Power
Figure 5. Drain Efficiency versus Output Power
80
70
70
65
60
155 MHz
135 MHz
175 MHz
135 MHz
175 MHz
60
50
40
155 MHz
55
50
V
P
= 12.5 Vdc
= 35 dBm
V
P
= 12.5 Vdc
DD
= 35 dBm
DD
in
in
200
400
600
800
1000
1200
200
400
600
I , BIASING CURRENT (mA)
DQ
800
1000
1200
I , BIASING CURRENT (mA)
DQ
Figure 6. Output Power versus Biasing Current
Figure 7. Drain Efficiency versus
Biasing Current
90
80
70
60
155 MHz
80
70
60
175 MHz
135 MHz
155 MHz
135 MHz
175 MHz
50
40
30
50
40
I
= 500 mA
= 35 dBm
I
= 500 mA
P = 35 dBm
in
DQ
DQ
P
in
10
11
12
13
14
15
10
11
12
V , SUPPLY VOLTAGE (VOLTS)
DD
13
14
15
V
, SUPPLY VOLTAGE (VOLTS)
DD
Figure 8. Output Power versus Supply Voltage
Figure 9. Drain Efficiency versus Supply Voltage
MRF1550NT1 MRF1550FNT1
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
11
10
10
10
9
10
8
10
90 100 110 120 130 140 150 160 170 180 190 200 210
T , JUNCTION TEMPERATURE (°C)
J
2
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 10. MTTF Factor versus Junction Temperature
MRF1550NT1 MRF1550FNT1
RF Device Data
Freescale Semiconductor
5
Z = 10 Ω
o
f = 175 MHz
f = 175 MHz
Z
in
Z
*
OL
f = 135 MHz
f = 135 MHz
V
= 12.5 V, I = 500 mA, P = 50 W
DQ out
DD
f
Z
Z
*
OL
in
MHz
135
155
175
Ω
Ω
4.1 + j0.5
4.2 + j1.7
3.7 + j2.3
1.0 + j0.6
1.2 + j.09
0.7 + j1.1
Z
= Complex conjugate of source
impedance.
in
Z
* = Complex conjugate of the load
OL
impedance at given output power,
voltage, frequency, and η > 50 %.
D
Output
Device
Input
Matching
Network
Matching
Network
Under Test
Z
Z
*
OL
in
Figure 11. Series Equivalent Input and Output Impedance
MRF1550NT1 MRF1550FNT1
RF Device Data
Freescale Semiconductor
6
Table 5. Common Source Scattering Parameters (VDD = 12.5 Vdc)
IDQ = 500 mA
S
S
S
S
S
S
S
S
S
S
S
S
11
11
11
21
12
12
12
22
22
22
f
|S
|
∠ φ
|S
|
∠ φ
80
69
61
54
51
47
46
43
43
43
41
41
|S
|
∠ φ
-39
-3
|S |
22
∠ φ
MHz
11
21
12
50
0.93
0.94
0.95
0.95
0.96
0.97
0.97
0.98
0.98
0.98
0.99
0.98
-178
-178
-178
-178
-178
-178
-178
-178
-178
-178
-177
-178
4.817
2.212
1.349
0.892
0.648
0.481
0.370
0.304
0.245
0.209
0.178
0.149
0.009
0.009
0.008
0.006
0.005
0.004
0.005
0.001
0.005
0.003
0.007
0.010
0.86
0.88
0.90
0.92
0.93
0.95
0.95
0.97
0.97
0.97
0.98
0.96
-176
-175
-174
-174
-174
-174
-174
-174
-174
-174
-175
-175
100
150
200
250
300
350
400
450
500
550
600
-8
-13
-7
-8
4
15
81
84
70
106
IDQ = 2.0 mA
21
f
|S
|
11
∠ φ
|S
|
21
∠ φ
80
69
61
54
51
47
46
43
43
44
41
41
|S
|
12
∠ φ
-119
4
|S |
22
∠ φ
MHz
50
0.93
0.94
0.95
0.95
0.96
0.97
0.97
0.98
0.98
0.98
0.99
0.98
-177
-178
-178
-178
-178
-178
-178
-178
-178
-177
-177
-178
4.81
2.20
1.35
0.89
0.65
0.48
0.37
0.30
0.25
0.21
0.18
0.15
0.003
0.006
0.003
0.004
0.001
0.004
0.006
0.007
0.006
0.006
0.002
0.004
0.93
0.93
0.93
0.93
0.94
0.94
0.95
0.96
0.97
0.97
0.97
0.96
-178
-178
-177
-176
-176
-175
-175
-174
-174
-174
-175
-174
100
150
200
250
300
350
400
450
500
550
600
-1
18
28
77
85
53
74
84
106
116
IDQ = 4.0 mA
21
f
|S
|
∠ φ
|S
|
∠ φ
87
82
77
74
71
68
67
|S
|
∠ φ
-116
42
|S |
22
∠ φ
MHz
11
21
12
50
0.97
0.96
0.96
0.96
0.97
0.97
0.97
-179
-179
-179
-179
-179
-179
-179
5.04
2.43
1.60
1.14
0.89
0.71
0.57
0.002
0.006
0.004
0.003
0.004
0.006
0.006
0.94
0.94
0.94
0.95
0.95
0.95
0.97
-179
-178
-177
-176
-175
-175
-174
100
150
200
250
300
350
13
43
65
68
74
MRF1550NT1 MRF1550FNT1
RF Device Data
Freescale Semiconductor
7
Table 5. Common Source Scattering Parameters (VDD = 12.5 Vdc) (continued)
IDQ = 4.0 mA (continued)
S
S
S
S
22
11
21
12
f
|S
|
∠ φ
|S
|
∠ φ
63
63
62
58
58
|S
|
∠ φ
58
|S |
22
∠ φ
MHz
11
21
12
400
450
500
550
600
0.97
0.98
0.98
0.98
0.98
-179
-178
-178
-178
-178
0.49
0.41
0.36
0.32
0.27
0.005
0.005
0.003
0.004
0.009
0.97
0.98
0.98
0.99
0.98
-173
-173
-173
-174
-174
73
128
57
83
MRF1550NT1 MRF1550FNT1
RF Device Data
Freescale Semiconductor
8
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
This device is a common-source, RF power, N-Channel
enhancement mode, Lateral Metal-Oxide Semiconductor
Field-Effect Transistor (MOSFET). Freescale Application
Note AN211A, “FETs in Theory and Practice”, is suggested
reading for those not familiar with the construction and char-
acteristics of FETs.
This surface mount packaged device was designed pri-
marily for VHF and UHF mobile power amplifier applications.
Manufacturability is improved by utilizing the tape and reel
capability for fully automated pick and placement of parts.
However, care should be taken in the design process to in-
sure proper heat sinking of the device.
drain-source voltage under these conditions is termed
DS(on). For MOSFETs, VDS(on) has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BVDSS values for this device are higher than normally re-
quired for typical applications. Measurement of BVDSS is not
recommended and may result in possible damage to the de-
vice.
V
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high - on the order of 109 Ω
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate-to-source threshold voltage,
The major advantages of Lateral RF power MOSFETs in-
clude high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mis-
matched loads without suffering damage.
VGS(th)
.
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate-to-drain (Cgd), and
gate-to-source (Cgs). The PN junction formed during fab-
rication of the RF MOSFET results in a junction capacitance
from drain-to-source (Cds). These capacitances are charac-
terized as input (Ciss), output (Coss) and reverse transfer
(Crss) capacitances on data sheets. The relationships be-
tween the inter-terminal capacitances and those given on
data sheets are shown below. The Ciss can be specified in
two ways:
Gate Termination — The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open-cir-
cuited or floating should be avoided. These conditions can
result in turn-on of the devices due to voltage build-up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate-to-source. If gate protec-
tion is required, an external zener diode is recommended.
Using a resistor to keep the gate-to-source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate-drain capacitance. If the
gate-to-source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate-threshold voltage
and turn the device on.
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF ap-
plications.
DC BIAS
Since this device is an enhancement mode FET, drain cur-
rent flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (IDQ), whose value is application dependent.
This device was characterized at IDQ = 150 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, IDQ may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. There-
fore, the gate bias circuit may generally be just a simple re-
sistive divider network. Some special applications may
require a more elaborate bias system.
Drain
C
gd
C
C
C
= C + C
gd gs
Gate
iss
= C + C
gd ds
C
oss
rss
ds
= C
gd
C
gs
Source
GAIN CONTROL
DRAIN CHARACTERISTICS
Power output of this device may be controlled to some de-
gree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.
One critical figure of merit for a FET is its static resistance
in the full-on condition. This on-resistance, RDS(on), occurs
in the linear region of the output characteristic and is speci-
fied at a specific gate-source voltage and drain current. The
MRF1550NT1 MRF1550FNT1
RF Device Data
Freescale Semiconductor
9
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
Large-signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region.
Two - port stability analysis with this device’s
S-parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Free-
scale Application Note AN215A, “RF Small-Signal Design
Using Two-Port Parameters” for a discussion of two port
network theory and stability.
MRF1550NT1 MRF1550FNT1
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
A
E1
B
r1
DRAIN ID
NOTE 6
4
5
4X b2
1
6
5
3
M
aaa
D A
D1
DRAIN ID
M
aaa
D A
2X b1
2
3
2
1
D
M
aaa
D A
4X
e
6
4
4X
b3
E2
E
VIEW Y-Y
NOTES:
1. CONTROLLING DIMENSION: INCH .
SEATING
PLANE
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
C
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSION D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.006 PER SIDE. DIMENSION D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
A
DATUM
PLANE
H
E2
DETERMINED AT DATUM PLANE −H−.
Y
Y
5. DIMENSIONS b1 AND b3 DO NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS
OF THE b1 AND b2 DIMENSIONS AT MAXIMUM
MATERIAL CONDITION.
SEATING
PLANE
D
6. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
INCHES
DIM MIN MAX
0.098
A1 0.000
A2 0.100
MILLIMETERS
A1
L
MIN
2.49
0.00
2.54
MAX
2.74
0.10
2.64
23.67
20.68
7.72
6.40
6.22
1.78
5.05
2.13
2.39
0.28
A
0.108
0.004
0.104
q
D
0.928
D1 0.806
0.296
0.932 23.57
0.814 20.47
A2
STYLE 1:
PIN 1. SOURCE (COMMON)
2. DRAIN
E
0.304
0.252
0.245
0.070
0.199
0.084
0.094
0.011
7.52
6.30
6.12
1.52
4.90
1.98
2.24
0.18
E1 0.248
E2 0.241
3. SOURCE (COMMON)
4. SOURCE (COMMON)
5. GATE
L
0.060
b1 0.193
b2 0.078
b3 0.088
c1
e
c1
6. SOURCE (COMMON)
0.007
0.193 BSC
4.90 BSC
r1
q
0.063
0
0.068
6
1.60
0
1.73
6
CASE 1264-09
ISSUE K
_
_
_
_
aaa
0.004
0.10
TO-272-6 WRAP
PLASTIC
MRF1550NT1
MRF1550NT1 MRF1550FNT1
RF Device Data
Freescale Semiconductor
11
A
E1
E2
B
2X
P
M
aaa
D A B
DRAIN ID
NOTE 5
4X b2
4
5
6
1
2
3
6
5
3
M
aaa
D A
DRAIN ID
2X b1
2
1
D
D2
M
aaa
D A
4X
e
4
4X
b3
D1
bbb C A
B
M
aaa
D A
E
VIEW Y-Y
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.006 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
c1
DETERMINED AT DATUM PLANE −H−.
A
4. DIMENSIONS b1 AND b3 DO NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS
OF THE b1 AND b2 DIMENSIONS AT MAXIMUM
MATERIAL CONDITION.
SEATING
PLANE
F
D
A1
ZONE "J"
Y
Y
5. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
6. DIMENSION A2 APPLIES WITHIN ZONE J ONLY.
A2
6
INCHES
DIM MIN MAX
0.098
A1 0.038
A2 0.040
MILLIMETERS
MIN
2.49
0.96
1.02
MAX
2.69
1.12
1.07
23.72
A
0.106
0.044
0.042
D
D1
D2
E
0.926
0.810 BSC
0.608 BSC
0.492 0.500 12.50
0.254 6.25
0.170 BSC 4.32 BSC
0.025 BSC 0.64 BSC
0.934 23.52
20.57 BSC
15.44 BSC
12.70
6.45
STYLE 1:
PIN 1. SOURCE (COMMON)
2. DRAIN
E1 0.246
E2
F
3. SOURCE (COMMON)
4. SOURCE (COMMON)
5. GATE
P
0.126
0.134
0.199
0.084
0.094
3.20
3.40
5.05
2.13
2.39
b1 0.193
b2 0.078
b3 0.088
4.90
1.98
2.24
6. SOURCE (COMMON)
c1
e
0.007
0.193 BSC
0.011 0.178
0.279
4.90 BSC
aaa
bbb
0.004
0.008
0.10
0.20
CASE 1264A-02
ISSUE C
TO-272-6
PLASTIC
MRF1550FNT1
MRF1550NT1 MRF1550FNT1
RF Device Data
Freescale Semiconductor
12
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Document Number: MRF1550N
Rev.11,9/2006
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