MRF5P21180HR6 [FREESCALE]
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET; 射频功率场效应晶体管N沟道增强模式横向MOSFET
| 型号： | MRF5P21180HR6 |
| 厂家： | 
FREESCALE SEMICONDUCTOR, INC |
| 描述： | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 文件： | 总12页 (文件大小：389K) |
| 下载： | 下载PDF数据表文档文件 |
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RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, NI-1230, CASE 375D-04, 4 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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MRF5P21240
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MRF5S19060MBR1
RF Power Field Effect TransistorsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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MRF5S19060MR1
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