MRF5S21150HR3 [FREESCALE]
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs; 射频功率场效应晶体管N沟道增强模式横向的MOSFET
| 型号： | MRF5S21150HR3 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 文件： | 总12页 (文件大小：386K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRF5S21150H
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21150HR3
MRF5S21150HSR3
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA,
P
out = 33 Watts Avg., Full Frequency Band, Channel Bandwidth =
2110-2170 MHz, 33 W AVG., 28 V
2 x W-CDMA
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 12.5 dB
Efficiency — 25%
IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -39 dBc in 3.84 MHz Channel Bandwidth
LATERAL N-CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
CASE 465B-03, STYLE 1
NI-880
MRF5S21150HR3
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465C-02, STYLE 1
NI-880S
MRF5S21150HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
-0.5, +65
-0.5, +15
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
380
2.2
W
W/°C
C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
- 65 to +150
150
°C
°C
°C
stg
T
C
T
200
J
CW Operation @ T = 25°C
Derate above 25°C
CW
150
0.84
W
W/°C
C
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 33 W CW
R
°C/W
θ
JC
0.46
0.47
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
Machine Model
Charge Device Model
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 360 μAdc)
V
V
2.5
—
—
—
—
3.7
0.26
9
3.5
—
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 1300 mAdc)
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 3.6 Adc)
V
0.3
—
GS
D
Forward Transconductance
(V = 10 Vdc, I = 3.6 Adc)
g
fs
DS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
C
—
3.2
—
pF
rss
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1300 mA, P = 33 W Avg., f1 = 2112.5 MHz,
DD
DQ
out
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
G
11
23
12.5
25
—
—
dB
%
ps
Drain Efficiency
η
D
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
IM3
ACPR
IRL
-37
-39
-12
-35
-37
-9
dBc
dBc
dB
—
—
1. Part internally matched both on input and output.
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
2
V
supply
+
+
+
R1
C10
C11
C12
C20
V
bias
+
C1
C5
Z4
R2
C9
C6
Z10
Z12 Z13
C19
C18
Z6
Z8
Z9
Z14 Z15
C17
Z16 Z17
RF
OUTPUT
Z1
Z2
Z3
C4
Z5
RF
INPUT
Z11
C2
C3
Z7
C13
DUT
C8
+
+
C14
C15
C16
C7
Z1
0.500″ x 0.083″ Microstrip
0.505″ x 0.083″ Microstrip
0.536″ x 0.083″ Microstrip
0.776″ x 0.083″ Microstrip
0.119″ x 1.024″ Microstrip
0.749″ x 0.083″ Microstrip
0.117″ x 1.024″ Microstrip
0.117″ x 1.100″ Microstrip
Z10, Z11
Z12
Z13
Z14
Z15, Z16
Z17
0.709″ x 0.083″ Microstrip
0.415″ x 1.100″ Microstrip
0.874″ x 0.083″ Microstrip
1.182″ x 0.083″ Microstrip
0.070″ x 0.220″ Microstrip
0.430″ x 0.083″ Microstrip
Z2
Z3
Z4
Z5
Z6, Z7
Z8
PCB
Taconic TLX8, 0.030″, ε = 2.55
r
Z9
Figure 1. MRF5S21150HR3(HSR3) Test Circuit Schematic
Table 5. MRF5S21150HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
22 μF, 35 V Tantalum Capacitor
6.8 pF 100B Chip Capacitors
Part Number
TAJE226M035R
Manufacturer
AVX
C1
C2, C6, C8, C9, C13, C18,
C19
100B6R8CW
ATC
C3,C4
1.8 pF 100B Chip Capacitors
220 nF Chip Capacitors (1812)
10 μF, 35 V Tantalum Capacitors
0.3 pF Chip Capacitor
100B1R8BW
1812Y224KXA
293D1106X9035D
100B0R3BW
13661471
ATC
C5, C7, C10, C14
C11, C12, C15, C16
C17
Vishay-Vitramon
Vishay-Sprague
ATC
C20
470 μF, 63 V Electrolytic Capacitor, Radial
10 kW, 1/4 W Chip Resistors
Philips
R1, R2
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
3
C20
C1
R1
C11 C12
C9
C5
C10
R2
C6
C19
C18
C2
C4
C3
C17
C8
C7
C13
C14
C15 C16
MRF5S21150
Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S21150HR3(HSR3) Test Circuit Component Layout
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
13
12
11
35
30
25
G
ps
η
D
V
DD
= 28 Vdc, P = 33 W (Avg.), I = 1300 mA
out DQ
10
9
20
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IRL
−28
−10
−15
−20
−25
−30
8
7
6
5
−32
−36
−40
−44
IM3
ACPR
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 33 Watts Avg.
14
−25
−30
I
= 1900 mA
DQ
1900 mA
1600 mA
1300 mA
−35
13
12
I
= 700 mA
DQ
−40
1600 mA
1000 mA
1300 mA
−45
−50
−55
−60
−65
1000 mA
11
10
700 mA
V
DD
f1 = 2135 MHz, f2 = 2145 MHz
= 28 Vdc
V = 28 Vdc
DD
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
Two−Tone Measurement, 10 MHz Tone Spacing
1
10
100
1000
1
10
P , OUTPUT POWER (WATTS) PEP
out
100
1000
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
−25
−30
−35
−40
−45
−50
−55
−60
58
56
3rd Order
Ideal
P3dB = 53.41 dBm (219.28 W)
P1dB = 52.73 dBm (187.5 W)
54
52
50
5th Order
7th Order
Actual
V
DD
= 28 Vdc, P = 150 W (PEP), I = 1300 mA
out DQ
V
DD
= 28 Vdc, I = 1300 mA
DQ
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
48
35
37
39
41
43
45
47
0.1
1
10
100
TWO−TONE SPACING (MHz)
P , INPUT POWER (dBm)
in
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
9
30
25
20
15
10
10
10
10
10
−25
−30
−35
−40
−45
−50
−55
V
= 28 Vdc, I = 1300 mA, f1 = 2135 MHz,
DQ
DD
f2 = 2145 MHz, 2−Carrier W−CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel Bandwidth,
PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3
8
7
6
ACPR
η
D
G
ps
5
0
1
10
, OUTPUT POWER (WATTS) AVG. (W−CDMA)
100
100
120
140
160
180
200
220
P
out
T , JUNCTION TEMPERATURE (°C)
J
2
Figure 8. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 9. MTTF Factor versus Junction Temperature
W-CDMA TEST SIGNAL
−20
100
3.84 MHz
Channel BW
−30
−40
−50
−60
−70
−80
−90
−100
10
1
0.1
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ 10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.01
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
0.001
−110
−120
0.0001
−25 −20 −15 −10 −5
0
5
10
15
20 25
0
2
4
6
8
10
f, FREQUENCY (MHz)
PEAK−TO−AVERAGE (dB)
Figure 11. 2-Carrier W-CDMA Spectrum
Figure 10. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
6
f = 2200 MHz
Z
load
f = 2080 MHz
Z = 25 Ω
o
f = 2080 MHz
f = 2200 MHz
Z
source
V
DD
= 28 Vdc, I = 1300 mA, P = 33 W Avg.
DQ out
f
Z
Z
load
source
MHz
Ω
Ω
2080
2110
2140
2170
2200
3.05 - j9.66
3.97 - j10.31
4.70 - j11.03
5.45 - j12.41
6.18 - j13.04
1.02 - j2.94
1.09 - j2.51
1.16 - j2.46
1.16 - j2.58
1.02 - j2.55
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 12. Series Equivalent Source and Load Impedance
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
7
NOTES
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
8
NOTES
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
B
G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2X
Q
bbb
1
M
M
M
B
T
A
B
4. DELETED
(FLANGE)
3
INCHES
DIM MIN MAX
MILLIMETERS
MIN
33.91
13.6
MAX
34.16
13.8
K
2
A
B
1.335
0.535
0.147
0.495
0.035
0.003
1.345
0.545
0.200
0.505
0.045
0.006
D
C
3.73
5.08
D
12.57
0.89
0.08
12.83
1.14
0.15
M
M
M
bbb
T
A
B
E
F
G
1.100 BSC
27.94 BSC
(INSULATOR)
(LID)
M
(LID)
R
H
0.057
0.170
0.872
0.871
.118
0.067
0.210
0.888
0.889
.138
1.45
4.32
1.70
5.33
K
M
M
M
M
M
M
M
M
bbb
ccc
T
T
A
B
B
ccc
T
T
A
B
M
22.15
19.30
3.00
22.55
22.60
3.51
N
(INSULATOR)
N
S
Q
R
0.515
0.515
0.525
0.525
13.10
13.10
13.30
13.30
M
M
A
M
M
aaa
A
B
S
aaa
bbb
ccc
0.007 REF
0.010 REF
0.015 REF
0.178 REF
0.254 REF
0.381 REF
H
C
STYLE 1:
F
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
E
A
T
A
CASE 465B-03
ISSUE D
NI-880
MRF5S21150HR3
(FLANGE)
B
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
(FLANGE)
INCHES
DIM MIN MAX
MILLIMETERS
MIN
22.99
13.60
3.73
MAX
23.24
13.80
5.08
A
B
0.905
0.535
0.147
0.495
0.035
0.003
0.057
0.170
0.872
0.871
0.515
0.515
0.915
0.545
0.200
0.505
0.045
0.006
0.067
0.210
0.888
0.889
0.525
0.525
K
2
C
D
12.57
0.89
0.08
12.83
1.14
0.15
D
E
M
M
M
F
bbb
T
A
B
H
1.45
4.32
1.70
5.33
K
M
22.15
19.30
13.10
13.10
22.55
22.60
13.30
13.30
(LID)
R
(INSULATOR)
(LID)
M
N
R
M
M
M
M
M
ccc
T
T
A
A
B
M
M
M
M
bbb
T
T
A
A
B
B
S
(INSULATOR)
S
aaa
bbb
ccc
0.007 REF
0.010 REF
0.015 REF
0.178 REF
0.254 REF
0.381 REF
N
M
M
M
ccc
aaa
B
STYLE 1:
H
PIN 1. DRAIN
2. GATE
3. SOURCE
C
F
E
SEATING
T
PLANE
CASE 465C-02
ISSUE D
A
A
(FLANGE)
NI-880S
MRF5S21150HSR3
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
11
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MRF5S21150H
Rev. 1, 5/2006
相关型号：
MRF5S21150HSR3
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
FREESCALE
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