MRF6S21050LR3 [FREESCALE]
RF Power Field Effect Transistors; 射频功率场效应晶体管
| 型号： | MRF6S21050LR3 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总12页 (文件大小：427K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRF6S21050L
Rev. 0, 3/2005
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21050LR3
MRF6S21050LSR3
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Typical 2-carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 450 mA,
Pout = 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
2170 MHz, 11.5 W AVG., 28 V
2 x W-CDMA
Drain Efficiency — 27.7%
IM3 @ 10 MHz Offset — -37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -40 dBc @ 3.84 MHz Channel Bandwidth
LATERAL N-CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW
Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
CASE 465E-04, STYLE 1
NI-400
Applications
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
MRF6S21050LR3
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
CASE 465F-04, STYLE 1
NI-400S
MRF6S21050LSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
-0.5, +68
-0.5, +12
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
151
0.86
W
W/°C
C
Storage Temperature Range
Operating Junction Temperature
CW Operation
T
- 65 to +150
°C
°C
W
stg
T
200
50
J
CW
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 50 W CW
Case Temperature 76°C, 12 W CW
R
°C/W
θ
JC
1.16
1.28
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1C (Minimum)
A (Minimum)
III (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
µAdc
µAdc
µAdc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 200 µAdc)
V
V
1
2
2
3
4
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 450 mAdc)
2.9
0.21
5.3
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 1.1 Adc)
V
—
—
0.3
—
GS
D
Forward Transconductance
(V = 10 Vdc, I = 1 Adc)
g
fs
DS
D
(3)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
C
—
0.75
—
pF
rss
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 450 mA, P = 11.5 W Avg., f1 = 2112.5 MHz,
DD
DQ
out
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
G
15
26
—
—
—
16
27.7
-37
-40
-15
18
—
dB
%
ps
Drain Efficiency
η
D
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
IM3
ACPR
IRL
-35
-38
-9
dBc
dBc
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part is internally matched both on input and output.
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
2
B1
R1
V
BIAS
V
SUPPLY
+
+
+
+
+
C7
C6
C5
C4
C3
C8
C9
C10
C11
C12
C13
C14
RF
OUTPUT
Z6
Z7
Z8
Z9
Z10
RF
INPUT
C2
Z1
Z2
Z3
Z4
Z5
C1
DUT
Z1, Z10
Z2
Z3
Z4
Z5
0.750″ x 0.084″ Microstrip
0.905″ x 0.084″ Microstrip
0.435″ x 0.173″ Microstrip
0.073″ x 0.333″ Microstrip
0.070″ x 0.333″ Microstrip
Z6
Z7
Z8
Z9
0.113″ x 0.590″ Microstrip
0.325″ x 0.590″ Microstrip
0.214″ x 0.150″ Microstrip
0.723″ x 0.084″ Microstrip
PCB
Arlon GX-0300-5022, 0.030″, ε = 2.5
r
Figure 1. MRF6S21050LR3(LSR3) Test Circuit Schematic
Table 5. MRF6S21050LR3(LSR3) Test Circuit Component Designations and Values
Part
Description
Bead, Surface Mount
Part Number
2743019447
Manufacturer
Fair-Rite
B1
C1, C2, C3, C8
C4
6.8 pF Chip Capacitors
100B6R8CP500X
ATC
0.01 µF Chip Capacitor (1825)
2.2 µF, 50 V Chip Capacitors (1825)
22 µF, 25 V Tantalum Capacitor
47 µF, 16 V Tantalum Capacitor
10 µF, 50 V Chip Capacitors (2220)
47 µF, 50 V Electrolytic Capacitor
220 µF, 50 V Electrolytic Capacitors
3.3 W, 1/4 W Chip Resistor (1210)
C1825C103J1RAC
C1825C225J5RAC
ECS-T1ED226R
Kemet
Kemet
C5, C11
C6
Panasonic TE Series
Kemet
C7
T491D476K016AS
GRM55DR61H106KA88B
MVK50VC47RM8X10TP
MVY50VC221MJ10TP
ERJ-14YJ3R3U
C9, C10
C12
Murata
Nippon
C13, C14
R1
Nippon
Dale/Vishay
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
3
C13
C11
C12
C10
C3
B1
C8
R1
C9
C4, C5*
C7 C6
C14
C2
C1
MRF6S21050L Rev. 1
* C4 on bottom, C5 on top.
Figure 2. MRF6S21050LR3(LSR3) Test Circuit Component Layout
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
16.4
16.3
16.2
16.1
16
30
η
D
28
26
V
= 28 Vdc, P = 11.5 W (Avg.)
out
= 450 mA, 2−Carrier W−CDMA
DD
24
22
G
ps
I
DQ
10 MHz Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
15.9
15.8
15.7
15.6
−10
−20
−30
−40
−50
−60
−32
−34
−36
−38
−40
−42
IRL
IM3
15.5
15.4
ACPR
2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 11.5 Watts
16
15.9
15.8
15.7
15.6
15.5
15.4
15.3
15.2
41
η
D
40
39
38
V
= 28 Vdc, P = 23 W (Avg.)
out
= 450 mA, 2−Carrier W−CDMA
DD
I
DQ
37
G
ps
10 MHz Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
−10
−15
−20
−25
−30
−35
−24
−26
−28
−30
−32
−34
IRL
IM3
15.1
15
ACPR
2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 23 Watts
17.5
−10
V = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
DD
Two−Tone Measurements, 10 MHz Tone Spacing
I
= 675 mA
560 mA
DQ
17
16.5
16
−20
−30
675 mA
450 mA
335 mA
15.5
15
I
= 225 mA
DQ
−40
−50
−60
14.5
335 mA
V
= 28 Vdc, f1 = 2135 MHz
f2 = 2145 MHz, Two−Tone
DD
225 mA
14
560 mA
450 mA
Measurements, 10 MHz Tone Spacing
13.5
0.1
1
10
100
0.1
1
10
100
P , OUTPUT POWER (WATTS) PEP
out
P , OUTPUT POWER (WATTS) PEP
out
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
−10
52
V
= 28 Vdc, P = 60 W (PEP), I = 450 mA
out DQ
Two−Tone Measurements, Center Frequency = 2140 MHz
DD
Ideal
P3dB = 48.66 dBm (73.43 W)
51
50
−20
−30
−40
−50
−60
P1dB = 47.89 dBm (61.52 W)
3rd Order
5th Order
49
48
47
46
45
44
Actual
7th Order
V
DD
= 28 Vdc, I = 450 mA
DQ
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 2140 MHz
28
29
30
31
32
33
34
35
36
0.01
0.1
1
10
100
P , INPUT POWER (dBm)
in
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulse CW Output Power versus
Input Power
40
−20
V
= 28 Vdc, I = 450 mA, f1 = 2135 MHz
DQ
35 f2 = 2145 MHz, 2 x W−CDMA, 10 MHz @ 3.84 MHz
DD
IM3
−25
Channel Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
30
−30
−35
25
20
ACPR
−40
−45
G
ps
15
10
−50
−55
−60
5
0
η
D
0.2
1
10
30
P , OUTPUT POWER (WATTS) AVG. W−CDMA
out
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
17
16.5
16
64
56
48
40
I
= 450 mA
f = 2140 MHz
DQ
16.5
16
G
ps
15.5
15.5
15
15
14.5
14
14.5
14
32
24
13.5
32 V
20 V
28 V
70
16 V
= 12 V
24 V
V
I
= 28 Vdc
= 450 mA
DD
13
12.5
12
16
8
13.5
13
DQ
V
η
D
DD
f = 2140 MHz
0
10
20
30
40
50
60
80
90 100
3
10
, OUTPUT POWER (WATTS) CW
100
P
out
P
out
, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
9
8
7
6
10
10
10
10
90 100 110 120 130 140 150 160 170 180 190 200 210
T , JUNCTION TEMPERATURE (°C)
J
2
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 12. MTTF Factor versus Junction Temperature
W-CDMA TEST SIGNAL
100
10
+20
+30
0
3.84 MHz
Channel BW
−10
1
−20
−30
0.1
0.01
W−CDMA. 3.84 MHz Channel Bandwidth @ +5 MHz
−40
−50
Offset. IM3 Measured in 3.84 MHz Bandwidth @
+10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability
on CCDF
−ACPR @
+ACPR @
3.84 MHz BW 3.84 MHz BW
−60
−70
−80
−IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
0.001
0.0001
−25 −20 −15 −10 −5
0
5
10
15
20
25
0
2
4
6
8
10
f, FREQUENCY (MHz)
PEAK−TO−AVERAGE (dB)
Figure 14. 2-Carrier W-CDMA Spectrum
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
7
f = 2200 MHz
Z = 25 Ω
o
Z
load
f = 2080 MHz
f = 2200 MHz
Z
source
f = 2080 MHz
V
DD
= 28 Vdc, I = 450 mA, P = 11.5 W Avg.
DQ out
f
Z
Z
load
source
MHz
2080
2090
2100
2110
2120
2130
2140
2150
2160
2170
2180
2190
2200
Ω
Ω
4.09 - j14.65
3.74 - j13.95
3.95 - j13.36
4.44 - j13.00
5.03 - j12.89
5.55 - j13.05
5.76 - j13.26
5.57 - j13.70
4.86 - j13.92
4.04 - j13.61
3.69 - j12.91
3.91 - j12.44
4.41 - j12.32
2.36 - j7.52
2.25 - j7.11
2.40 - j6.78
2.68 - j6.59
2.99 - j6.52
3.26 - j6.64
3.32 - j6.68
3.20 - j6.87
2.82 - j6.93
2.44 - j6.70
2.33 - j6.29
2.49 - j6.05
2.77 - j5.96
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
8
NOTES
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
2X
Q
M
M
M
G
bbb
T
B
A
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060 .005 (1.52 0.13) RADIUS OR .06 .005
(1.52 0.13) x 45° CHAMFER.
B
SEE NOTE 4
2X K
1
2
3
B
INCHES
DIM MIN MAX
.805 20.19
MILLIMETERS
MIN
MAX
20.44
9.9
2X D
A
B
.795
.380
.125
.275
.035
.004
.390
.163
.285
.045
.006
9.65
3.17
6.98
0.89
0.10
M
M
M
bbb
T
A
B
C
4.14
7.24
1.14
0.15
D
E
F
N (LID)
M
M
M
B
.600 BSC
15.24 BSC
G
ccc
T
A
M
M
M
B
ccc
T
A
H
.057
.092
.395
.395
.120
.395
.395
.067
.122
.405
.405
.130
.405
.405
1.45
2.33
10
10
3.05
10
1.7
K
3.1
10.3
10.3
3.3
10.3
10.3
R (LID)
M
C
E
F
N
Q
R
S
10
aaa
bbb
ccc
.005 BSC
.010 BSC
.015 BSC
0.127 BSC
0.254 BSC
0.381 BSC
S
H
M
M
M
aaa
T
A
B
SEATING
PLANE
(INSULATOR)
T
M
(INSULATOR)
M
M
M
B
aaa
T
A
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
A
CASE 465E-04
ISSUE E
NI-400
MRF6S21050LR3
2X D
bbb
NOTES:
1. CONTROLLING DIMENSION: INCH.
M
M
M
T
A
B
1
2
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
MILLIMETERS
MIN
MAX
10.29
10.29
4.14
7.24
1.14
0.15
1.70
3.10
A
B
.395
.395
.125
.275
.035
.004
.057
.092
.395
.395
.395
.395
.405 10.03
.405 10.03
2X K
C
.163
.285
.045
.006
.067
.122
3.18
6.98
0.89
0.10
1.45
2.34
D
(LID)
R
E
M
M
M
ccc
T A
B
F
M
M
M
B
ccc
T
A
H
(LID)
N
K
C
E
A
F
M
.405 10.03
.405 10.03
.405 10.03
.405 10.03
10.29
10.29
10.29
10.29
N
R
3
S
aaa
bbb
ccc
.005 REF
.010 REF
.015 REF
0.127 REF
0.254 REF
0.38 REF
H
(INSULATOR)
S
SEATING
PLANE
T
A
M
M
M
B
aaa
T
A
(FLANGE)
STYLE 1:
(INSULATOR)
M
PIN 1. DRAIN
2. GATE
3. SOURCE
B
B
(FLANGE)
M
M
M
aaa
T A
B
CASE 465F-04
ISSUE C
NI-400S
MRF6S21050LSR3
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
11
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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
Freescale Semiconductor, Inc. 2005. All rights reserved.
1-800-441-2447 or 303-675-2140
Fax: 303-675-2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Document Number:
Rev. 0, 3/2005
MRF6S21050L
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