MRF6S27050HR3 [FREESCALE]
RF Power Field Effect Transistors; 射频功率场效应晶体管
| 型号： | MRF6S27050HR3 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总12页 (文件大小：464K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6S27050H
Rev. 0, 11/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2500 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
MRF6S27050HR3
MRF6S27050HSR3
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ
=
500 mA, Pout = 7 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
2500-2700 MHz, 7 W AVG., 28 V
SINGLE W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
Drain Efficiency — 22.5%
ACPR @ 5 MHz Offset — -42.5 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2600 MHz, 50 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
CASE 465-06, STYLE 1
NI-780
• Lower Thermal Resistance Package
MRF6S27050HR3
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465A-06, STYLE 1
NI-780S
MRF6S27050HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +68
-0.5, +12
- 65 to +150
150
Unit
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Case Operating Temperature
V
DSS
V
GS
T
stg
T
°C
C
(1,2)
Operating Junction Temperature
T
225
°C
J
Table 2. Thermal Characteristics
Characteristic
(2,3)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 43 W CW
Case Temperature 72°C, 7 W CW
R
θ
JC
°C/W
0.85
0.98
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 250 μAdc)
V
V
1
2
2
3
4
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 500 mAdc, Measured in Functional Test)
2.8
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 2.2 Adc)
V
—
0.21
0.3
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
0.83
232
—
—
pF
pF
rss
GS
Output Capacitance
C
oss
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 500 mA, P = 7 W Avg. W-CDMA,
out
DD
DQ
f = 2585 MHz and 2615 MHz, Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
15
20.5
-40
—
16
18
—
—
—
dB
%
ps
Drain Efficiency
η
22.5
-42.5
-10
D
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
dBc
dB
1. Part internally matched both on input and output.
MRF6S27050HR3 MRF6S27050HSR3
RF Device Data
Freescale Semiconductor
2
R1
B1
V
SUPPLY
B2
+
+
+
+
V
BIAS
C8
C9
C10
C11
C12
Z16
C13 C14 C15
+
+
Z9
Z11
C7
C6
C5
C4
C3
RF
OUTPUT
Z8
Z10
Z12
Z13 Z14 Z15
Z17
RF
INPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
C2
C1
DUT
Z1
0.748″ x 0.081″ Microstrip
0.273″ x 0.081″ Microstrip
0.055″ x 0.220″ Microstrip
0.090″ x 0.440″ Microstrip
0.195″ x 0.170″ Microstrip
0.797″ x 0.490″ Microstrip
0.082″ x 0.490″ Microstrip
0.050″ x 0.476″ Microstrip
0.070″ x 0.350″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.091″ x 0.753″ Microstrip
0.150″ x 0.753″ Microstrip
0.153″ x 0.543″ Microstrip
0.145″ x 0.384″ Microstrip
0.446″ x 0.148″ Microstrip
0.130″ x 0.425″ Microstrip
0.384″ x 0.081″ Microstrip
0.730″ x 0.081″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Arlon GX0300-55-22, 0.030″, ε = 2.55
r
Figure 1. MRF6S27050HR3(SR3) Test Circuit Schematic
Table 5. MRF6S27050HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
2508051107Y0
Fair-Rite
B2
Ferrite Bead, Short
2743019447
Fair-Rite
ATC
C1, C2
C3, C8
C4, C11
C5
4.3 pF Chip Capacitors
600B4R3BT250XT
600B3R6BT250XT
C1825C225J5RAC
C1825C103J1RAC
ECS-T1ED226R
3.6 pF Chip Capacitors
ATC
2.2 μF, 50 V Chip Capacitors
0.01 μF, 100 V Chip Capacitor
22 μF, 25 V Tantulum Capacitor
47 μF, 16 V Tantalum Capacitor
10 μF, 50 V Tantalum Capacitors
1.0 μF, 50 V Chip Capacitors
330 μF, 63 V Electrolytic Capacitor
47 μF, 50 V Electrolytic Capacitor
2.7 Ω, 1/4 W Chip Resistor
Kemet
Kemet
C6
Panasonic TE series
Kemet
C7
T491D476K016AT
522Z-050/100MTRE
GRM32RR71H105KA01B
SME63V331M12X25LL
MVK50VC47RM8X10TP
CRCW12062R7F100
C9, C10
C12, C13
C14
Tecate
Murata
Nippon Chemi-Con
United Chemi-Con
Vishay
C15
R1
MRF6S27050HR3 MRF6S27050HSR3
RF Device Data
Freescale Semiconductor
3
C11
C14
C3
B1
R1
B2
C9 C10
C15
C8
C4 Top
C5 Bottom
C7 C6
C1
C13
C2
C12
MRF6S27050
Rev. 1A
Figure 2. MRF6S27050HR3(SR3) Test Circuit Component Layout
MRF6S27050HR3 MRF6S27050HSR3
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
19
18
17
24
23
22
η
D
G
ps
V
= 28 Vdc, P = 7 W (Avg.), I = 500 mA
out DQ
Single−Carrier W−CDMA, 3.84 MHz Channel
DD
16
15
21
20
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
−5
IRL
14
13
12
11
−40
−50
−60
−70
−10
−15
ACPR
−20
−25
ALT1
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
f, FREQUENCY (MHz)
Figure 3. Single-Carrier W-CDMA Broadband Performance
@ Pout = 7 Watts Avg.
19
18
17
34
33
32
η
D
G
ps
V
= 28 Vdc, P = 14 W (Avg.)
out
= 500 mA, Single−Carrier W−CDMA
DD
16
15
31
30
I
DQ
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−5
IRL
14
13
12
11
−30
−40
−50
−60
−10
−15
ACPR
−20
−25
ALT1
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
f, FREQUENCY (MHz)
Figure 4. Single-Carrier W-CDMA Broadband Performance
@ Pout = 14 Watts Avg.
20
19
18
17
16
−15
I
= 1000 mA
V
= 28 Vdc, f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two−Tone Measurements
DQ
DD
−20
−25
−30
750 mA
500 mA
250 mA
I
= 125 mA
DQ
−35
−40
−45
−50
−55
250 mA
750 mA
15
14
13
12
125 mA
V
= 28 Vdc
DD
500 mA
f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two−Tone Measurements
1000 mA
1
10
100
0.5
1
10
, OUTPUT POWER (WATTS) PEP
100
P
P
, OUTPUT POWER (WATTS) PEP
out
out
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S27050HR3 MRF6S27050HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
−10
−5
V
= 28 Vdc, I = 500 mA
DQ
f1 = 2598.75 MHz, f2 = 2601.25 MHz
DD
V
= 28 Vdc, P = 50 W (PEP), I = 500 mA
out DQ
Two−Tone Measurements
DD
−10
−15
−20
−30
−40
−50
Two−Tone Measurements, 2.5 MHz Tone Spacing
(f1 + f2)/2 = Center Frequency of 2600 MHz
−20
−25
IM3−U
IM3−L
−30
−35
−40
−45
−50
−55
3rd Order
IM5−L
IM5−U
IM7−L
−60
−70
5th Order
7th Order
IM7−U
1
10
100
0.1
1
10
100
TWO−TONE SPACING (MHz)
P
, OUTPUT POWER (WATTS) PEP
out
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
54
P6dB = 47.88 dBm (61.38 W)
Ideal
53
52
51
50
P3dB = 47.44 dBm (55.46 W)
P1dB = 46.91 dBm (49.06 W)
49
48
47
Actual
46
45
44
V
= 28 Vdc, I = 500 mA
DQ
DD
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 2600 MHz
27
28
29
30
31
32
33
34
35
36
37
P , INPUT POWER (dBm)
in
Figure 9. Pulsed CW Output Power versus
Input Power
50
45
−15
−20
−25
V
= 28 Vdc, I = 500 mA, f = 2600 MHz
DQ
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
DD
40 PAR = 8.5 dB @ 0.01% Probability (CCDF)
−30
−35
−40
−45
−50
−55
−60
−65
35
30
25
ACPR
20
G
ps
15
10
5
ALT1
η
D
0
0.2
1
10
40
P
, OUTPUT POWER (WATTS) AVG. W−CDMA
out
Figure 10. Single-Carrier W-CDMA ACPR,
ALT1, Power Gain and Drain Efficiency
versus Output Power
MRF6S27050HR3 MRF6S27050HSR3
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
20
19
18
17
16
15
14
13
12
64
17
I
= 500 mA
f = 2600 MHz
DQ
−30_C
56
48
40
32
24
16
25_C
85_C
G
ps
T = −30_C
C
25_C
85_C
16
15
14
V
= 28 Vdc
= 500 mA
DD
8
0
I
DQ
f = 2600 MHz
η
32 V
60
D
V
= 24 V
28 V
50
DD
0.1
1
10
100
0.3
10
20
30
40
70
P
, OUTPUT POWER (WATTS) CW
out
P
, OUTPUT POWER (WATTS) CW
out
Figure 12. Power Gain versus Output Power
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
9
35
30
25
20
15
10
10
10
10
10
6
5
4
V
= 28 Vdc, I = 500 mA
DQ
DD
WiMAX, 802.16, 64 QAM 3/4, 4 Bursts
7 MHz Channel Bandwidth, f = 2600 MHz
8
7
6
3
η
D
EVM
2
1
34
35
36
37
38
39
40
41
42
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
P
, OUTPUT POWER (dBm)
out
2
Figure 13. Drain Efficiency and Error Vector
Magnitude versus Output Power
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 14. MTTF Factor versus Junction Temperature
MRF6S27050HR3 MRF6S27050HSR3
RF Device Data
Freescale Semiconductor
7
W-CDMA TEST SIGNAL
100
10
−10
−20
−30
−40
−50
−60
3.84 MHz
Channel BW
1
0.1
0.01
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ 10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
−70
−80
−90
0.001
−ACPR in 3.84 MHz
Integrated BW
−ACPR in 3.84 MHz
Integrated BW
0.0001
0
2
4
6
8
10
−100
−110
PEAK−TO−AVERAGE (dB)
Figure 15. CCDF W-CDMA 3GPP, Test Model 1,
−9 −7.2 −5.4 −3.6 −1.8
0
1.8 3.6
5.4 7.2
9
64 DPCH, 67% Clipping, Single-Carrier Test Signal
f, FREQUENCY (MHz)
Figure 16. Single-Carrier W-CDMA Spectrum
MRF6S27050HR3 MRF6S27050HSR3
RF Device Data
Freescale Semiconductor
8
Z
source
f = 2700 MHz
f = 2500 MHz
Z = 25 Ω
o
f = 2500 MHz
Z
load
f = 2700 MHz
V
= 28 Vdc, I = 500 mA, P = 7 W Avg.
DQ out
DD
f
Z
Z
load
W
source
W
MHz
2500
2525
2550
2575
2600
2625
2650
2675
2700
6.897 + j6.212
7.062 + j6.412
7.239 + j6.611
7.428 + j6.808
7.630 + j7.002
7.846 + j7.193
8.075 + j7.380
8.320 + j7.561
8.579 + j7.737
11.524 - j6.193
11.325 - j6.396
11.110 - j6.594
10.880 - j6.783
10.634 - j6.962
10.373 - j7.130
10.098 - j7.283
9.810 - j7.420
9.511 - j7.541
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 17. Series Equivalent Source and Load Impedance
MRF6S27050HR3 MRF6S27050HSR3
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
B
G
2X
Q
1
M
M
M
B
bbb
T A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
3
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
K
B
2
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
B
bbb
T A
MIN
33.91
9.65
MAX
34.16
9.91
A
B
1.335
0.380
0.125
0.495
0.035
0.003
1.345
0.390
0.170
0.505
0.045
0.006
C
3.18
4.32
(LID)
R
(INSULATOR)
M
N
D
12.57
0.89
0.08
12.83
1.14
0.15
E
M
M
M
M
M
M
M
bbb
T A
B
ccc
T A
T A
B
F
G
1.100 BSC
27.94 BSC
(INSULATOR)
S
(LID)
H
0.057
0.170
0.774
0.772
.118
0.067
0.210
0.786
0.788
.138
1.45
4.32
1.70
5.33
K
M
M
M
M
M
B
aaa
B
ccc
T A
M
19.66
19.60
3.00
19.96
20.00
3.51
H
N
Q
R
0.365
0.365
0.375
0.375
9.27
9.27
9.53
9.52
C
S
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
F
SEATING
PLANE
E
A
T
STYLE 1:
A
CASE 465-06
ISSUE G
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
NI-780
MRF6S27050HR3
4X U
(FLANGE)
4X Z
(LID)
B
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2X K
2
B
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
bbb
T A
B
MIN
20.45
9.65
3.18
12.57
0.89
0.08
1.45
4.32
19.61
19.61
9.27
9.27
−−−
MAX
20.70
9.91
4.32
12.83
1.14
0.15
1.70
5.33
20.02
20.02
9.53
9.52
1.02
0.76
A
B
0.805
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
0.365
0.365
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
0.815
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
0.375
0.375
C
D
E
(LID)
N
(LID)
R
F
M
M
M
ccc
T A
B
M
M
M
M
H
ccc
T A
T A
B
K
(INSULATOR)
S
M
(INSULATOR)
M
N
M
M
M
M
M
B
aaa
B
bbb
T A
R
S
H
U
Z
−−−
C
aaa
bbb
ccc
0.127 REF
0.254 REF
0.381 REF
3
F
SEATING
PLANE
E
A
STYLE 1:
T
PIN 1. DRAIN
2. GATE
5. SOURCE
A
(FLANGE)
CASE 465A-06
ISSUE H
NI-780S
MRF6S27050HSR3
MRF6S27050HR3 MRF6S27050HSR3
RF Device Data
Freescale Semiconductor
10
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Nov. 2006
• Initial Release of Data Sheet
MRF6S27050HR3 MRF6S27050HSR3
RF Device Data
Freescale Semiconductor
11
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Document Number: MRF6S27050H
Rev. 0, 11/2006
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