MRF6V12500HR3 [FREESCALE]
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs; 射频功率场效应晶体管N沟道增强模式横向的MOSFET
| 型号： | MRF6V12500HR3 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 文件： | 总10页 (文件大小：420K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6V12500H
Rev. 0, 9/2009
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF6V12500HR3
MRF6V12500HSR3
RF Power transistors designed for applications operating at frequencies
between 965 and 1215 MHz. These devices are suitable for use in pulsed
applications.
• Typical Pulsed Performance: VDD = 50 Volts, IDQ = 200 mA, Pout
=
500 Watts Peak (50 W Avg.), f = 1030 MHz, Pulse Width = 128 μsec,
Duty Cycle = 10%
Power Gain — 19.7 dB
965-1215 MHz, 500 W, 50 V
PULSED
LATERAL N-CHANNEL
RF POWER MOSFETs
Drain Efficiency — 62%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak
Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465-06, STYLE 1
NI-780
MRF6V12500HR3
CASE 465A-06, STYLE 1
NI-780S
MRF6V12500HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +100
-6.0, +10
- 65 to +150
150
Unit
Vdc
Vdc
°C
Drain-Source Voltage
V
DSS
Gate-Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
°C
C
T
200
°C
J
Table 2. Thermal Characteristics
Characteristic
(1,2)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 500 W Pulsed, 128 μsec Pulse Width, 10% Duty Cycle
Z
0.044
°C/W
θ
JC
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
2 (Minimum)
B (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate-Source Leakage Current
I
—
110
—
—
—
—
—
10
—
μAdc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain-Source Breakdown Voltage
(V = 0 Vdc, I = 200 mA)
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
20
μAdc
μAdc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
200
(V = 90 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 1.32 mA)
V
V
0.9
1.7
—
1.7
2.4
2.4
3.2
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I = 200 mAdc, Measured in Functional Test)
DD
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 3.26 Adc)
V
0.25
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
0.2
697
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
1391
iss
(V = 50 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 200 mA, P = 500 W Peak (50 W Avg.), f = 1030 MHz,
DD
DQ
out
Pulsed, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
G
18.5
58
19.7
62
22
—
-9
dB
%
ps
Drain Efficiency
η
D
Input Return Loss
IRL
—
-18
dB
1. Part internally matched both on input and output.
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor
2
V
SUPPLY
+
+
R3
R1
V
BIAS
C5
C12 C13
C14
C15
C9
C8
C7
C3
Z19
RF
OUTPUT
Z9
Z10
Z11 Z12 Z13 Z14 Z15 Z16 Z17
Z18
RF
INPUT
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z21
C1
DUT
Z20
R4
R2
C6
C16
C11
C10
C4
Z1
0.457″ x 0.080″ Microstrip
0.250″ x 0.080″ Microstrip
0.605″ x 0.040″ Microstrip
0.080″ x 0.449″ Microstrip
0.374″ x 0.608″ Microstrip
0.118″ x 1.252″ Microstrip
0.778″ x 1.710″ Microstrip
0.095″ x 1.710″ Microstrip
0.482″ x 0.050″ Microstrip
0.138″ x 1.500″ Microstrip
Z11
0.161” x 1.500″ Microstrip
0.613” x 1.281″ Microstrip
0.248” x 0.865″ Microstrip
0.087” x 0.425″ Microstrip
0.309” x 0.090″ Microstrip
0.193” x 0.516″ Microstrip
0.279” x 0.080″ Microstrip
0.731” x 0.080″ Microstrip
0.507” x 0.040″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z9, Z20
Z10
Z19, Z21
PCB
Arlon CuClad 250GX-0300-55-22, 0.030″, ε = 2.55
r
Figure 1. MRF6V12500HR3(HSR3) Test Circuit Schematic
Table 5. MRF6V12500HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
ATC
C1, C2
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
ATC100B330JT500XT
GRM55DR61H106KA88L
2225X7R225KT3AB
C3, C4, C5, C6
C7, C10
33 pF Chip Capacitors
ATC
10 μF, 50 V Chip Capacitors
2.2 μF, 100 V Chip Capacitors
22 μF, 25 V Chip Capacitor
1 μF, 100 V Chip Capacitor
470 μF, 63 V Electrolytic Capacitors
56 Ω, 1/4 W Chip Resistors
0 Ω, 3 A Chip Resistors
Murata
ATC
C8, C11, C13, C16
C9
TPSD226M025R0200
GRM31CR72A105KA01L
MCGPR63V477M13X26-RH
CRCW120656R0FKEA
CRCW12060000Z0EA
AVX
C12
Murata
Multicomp
Vishay
Vishay
C14, C15
R1, R2
R3, R4
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor
3
C14
C12
R3
C15
C13
C8
C7
C5
C9
C3
MRF6V12500H Rev. 1
R1
C2
C1
R2
C11 C10
C6
C4
R4
C16
Figure 2. MRF6V12500HR3(HSR3) Test Circuit Component Layout
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
10000
1000
160
C
140
120
100
80
iss
P
= 475 W
out
C
oss
100
10
1
Measured with 30 mV(rms)ac @ 1 MHz
= 0 Vdc
P
= 525 W
out
V
GS
P
= 500 W
out
60
40
V
= 50 Vdc, I = 200 mA
DQ
DD
C
20
0
rss
f = 1030 MHz, Pulse Width = 128 μsec
0.1
0
5
10
15
20
25
0
10
V
20
30
40
50
DUTY CYCLE (%)
, DRAIN−SOURCE VOLTAGE (VOLTS)
DS
Figure 4. Safe Operating Area
Figure 3. Capacitance versus Drain-Source Voltage
22
80
70
62
61
60
59
58
57
P3dB = 57.6 dBm (575 W)
21
20
19
18
Ideal
G
ps
P1dB = 57.1 dBm (511 W)
60
50
Actual
56
55
54
53
52
51
50
49
40
30
20
10
0
η
D
17
16
V
= 50 Vdc, I = 200 mA, f = 1030 MHz
DQ
DD
V
= 50 Vdc, I = 200 mA, f = 1030 MHz
DQ
DD
15
14
Pulse Width = 128 μsec, Duty Cycle = 10%
Pulse Width = 128 μsec, Duty Cycle = 10%
30
100
1000
30
32
34
36
38
40
42
P
, OUTPUT POWER (WATTS) PULSED
out
P , INPUT POWER (dBm) PULSED
in
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
Figure 6. Pulsed Output Power versus
Input Power
22
21
20
19
18
17
22
21
20
19
18
17
I
= 800 mA
DQ
50 V
600 mA
I
= 200 mA, f = 1030 MHz
DQ
400 mA
Pulse Width = 128 μsec
Duty Cycle = 10%
45 V
16
15
14
200 mA
40 V
35 V
V
= 30 V
DD
V
= 50 Vdc, f = 1030 MHz
DD
13
12
Pulse Width = 128 μsec, Duty Cycle = 10%
30
100
1000
30
100
1000
P
, OUTPUT POWER (WATTS) PULSED
out
P
, OUTPUT POWER (WATTS) PULSED
out
Figure 8. Pulsed Power Gain versus
Output Power
Figure 7. Pulsed Power Gain versus
Output Power
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
700
22
80
70
G
ps
T
= −30_C
C
21
20
19
18
17
16
15
14
600
500
T
= −30_C
55_C
C
85_C
60
50
40
30
20
10
0
25_C
25_C
85_C
55_C
400
300
200
η
D
V
= 50 Vdc, I = 200 mA, f = 1030 MHz
DQ
DD
100
0
V
= 50 Vdc, I = 200 mA, f = 1030 MHz
DQ
DD
Pulse Width = 128 μsec, Duty Cycle = 10%
Pulse Width = 128 μsec, Duty Cycle = 10%
0
2
4
6
8
10
12
30
100
, OUTPUT POWER (WATTS) PULSED
1000
P , INPUT POWER (dBm) PULSED
in
P
out
Figure 9. Pulsed Output Power versus
Input Power
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power
9
10
8
10
7
10
6
10
5
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 50 Vdc, P = 500 W Peak, Pulse Width = 128 μsec,
DD
out
Duty Cycle = 10%, and η = 62%.
D
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor
6
Z = 5 Ω
o
Z
f = 1030 MHz
load
f = 1030 MHz
Z
source
V
= 50 Vdc, I = 200 mA, P = 500 W Peak
DQ out
DD
f
Z
Z
load
W
source
W
MHz
1030
1.36 - j1.27
2.50 - j0.17
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
load
=
Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 12. Series Equivalent Source and Load Impedance
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
B
G
2X
Q
1
M
M
M
B
bbb
T
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
3
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
K
B
2
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
B
bbb
T
A
MIN
33.91
9.65
MAX
34.16
9.91
A
B
1.335
0.380
0.125
0.495
0.035
0.003
1.345
0.390
0.170
0.505
0.045
0.006
C
3.18
4.32
(LID)
R
(INSULATOR)
M
N
D
12.57
0.89
0.08
12.83
1.14
0.15
E
M
M
M
M
M
M
M
M
bbb
T
A
B
ccc
T
T
A
A
B
F
G
1.100 BSC
27.94 BSC
(INSULATOR)
S
(LID)
H
0.057
0.170
0.774
0.772
.118
0.067
0.210
0.786
0.788
.138
1.45
4.32
1.70
5.33
K
M
M
M
M
aaa
B
ccc
T
A
B
M
19.66
19.60
3.00
19.96
20.00
3.51
H
N
Q
R
0.365
0.365
0.375
0.375
9.27
9.27
9.53
9.52
C
S
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
F
SEATING
PLANE
E
A
T
STYLE 1:
A
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465-06
ISSUE G
NI-780
MRF6V12500HR3
4X U
(FLANGE)
4X Z
(LID)
B
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2X K
2
B
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
bbb
T
A
B
MIN
20.45
9.65
3.18
12.57
0.89
0.08
1.45
4.32
19.61
19.61
9.27
9.27
−−−
MAX
20.70
9.91
4.32
12.83
1.14
0.15
1.70
5.33
20.02
20.02
9.53
9.52
1.02
0.76
A
B
0.805
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
0.365
0.365
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
0.815
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
0.375
0.375
C
D
E
(LID)
N
(LID)
R
S
F
M
M
M
M
ccc
T
A
B
M
M
M
M
H
ccc
T
T
A
A
B
K
(INSULATOR)
M
(INSULATOR)
M
N
M
M
M
M
aaa
B
bbb
T
A
B
R
S
H
U
Z
−−−
C
aaa
bbb
ccc
0.127 REF
0.254 REF
0.381 REF
3
F
SEATING
PLANE
E
A
STYLE 1:
T
PIN 1. DRAIN
2. GATE
5. SOURCE
A
(FLANGE)
CASE 465A-06
ISSUE H
NI-780S
MRF6V12500HSR3
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor
8
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2009
• Initial Release of Data Sheet
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor
9
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Document Number: MRF6V12500H
Rev. 0, 9/2009
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