MRFE6VP8600H [FREESCALE]

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs; RF功率LDMOS晶体管高耐用性N - 沟道增强 - 模式横向的MOSFET
MRFE6VP8600H
型号: MRFE6VP8600H
厂家: FREESCALE SEMICONDUCTOR, INC    FREESCALE SEMICONDUCTOR, INC
描述:

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
RF功率LDMOS晶体管高耐用性N - 沟道增强 - 模式横向的MOSFET

晶体 晶体管
文件: 总20页 (文件大小:1270K)
下载:  下载PDF数据表文档文件

MRFE6VP8600HR5

LDMOS Broadband RF Power Transistor, 470-860 MHz, 600 W, 50 V

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3 PHILIPS

MRFE6VP8600HSR5

LDMOS Broadband RF Power Transistor, 470-860 MHz, 600 W, 50 V

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0 PHILIPS

MRFE6VS25N

RF Power LDMOS Transistor

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118 FREESCALE

MRFE6VS25NR1

RF Power LDMOS Transistor

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65 FREESCALE

MRFE8VP8600H

MRFE8VP8600H

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1 PHILIPS

MRFF959T1

L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, SC-90, 3 PIN

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0 PHILIPS

MRFG35002N6AT1

Gallium Arsenide PHEMT RF Power Field Effect Transistor

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42 FREESCALE

MRFG35002N6T1

Gallium Arsenide PHEMT RF Power Field Effect Transistor

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12 FREESCALE

MRFG35002N6T1

Gallium Arsenide PHEMT RF Power Field Effect Transistor

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11 FREESCALE

MRFG35002N6T1_08

Gallium Arsenide PHEMT RF Power Field Effect Transistor

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8 FREESCALE

MRFG35003ANT1

Gallium Arsenide PHEMT RF Power Field Effect Transistor

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23 FREESCALE

MRFG35003ANT1

C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN

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0 PHILIPS

MRFG35003M6T1

Gallium Arsenide PHEMT RF Power Field Effect Transistor

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18 FREESCALE

MRFG35003M6T1

GALLIUM ARSENIDE PHEMT

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15 MOTOROLA

MRFG35003M6T1

GALLIUM ARSENIDE PHEMT

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26 MOTOROLA