MW4IC915NBR1 [FREESCALE]
RF LDMOS Wideband Integrated Power Amplifiers; RF LDMOS宽带集成功率放大器
| 型号： | MW4IC915NBR1 |
| 厂家： | 
Freescale |
| 描述： | RF LDMOS Wideband Integrated Power Amplifiers |
| 文件： | 总20页 (文件大小：686K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MW4IC915N
Rev. 7, 5/2006
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC915NB/GNB wideband integrated circuit is designed for GSM
and GSM EDGE base station applications. It uses Freescale’s newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage
structure. Its wideband On-Chip design makes it usable from 750 to 1000 MHz.
The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, N-CDMA and W-CDMA.
MW4IC915NBR1
MW4IC915GNBR1
860 - 960 MHz, 15 W, 26 V
GSM/GSM EDGE, N-CDMA
RF LDMOS WIDEBAND
Final Application
• Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA,
Pout = 15 Watts CW, Full Frequency Band (860-960 MHz)
Power Gain — 30 dB
INTEGRATED POWER AMPLIFIERS
Power Added Efficiency — 44%
Driver Application
• Typical GSM/GSM EDGE Performances: VDD = 26 Volts, IDQ1 = 60 mA,
IDQ2 = 240 mA, Pout = 3 Watts Avg., Full Frequency Band (869-894 MHz
and 921-960 MHz)
Power Gain — 31 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = -65 dBc
Spectral Regrowth @ 600 kHz Offset = -83 dBc
EVM — 1.5%
CASE 1329-09
TO-272 WB-16
PLASTIC
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW
MW4IC915NBR1
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
• On-Chip Current Mirror gm Reference FET for Self Biasing Application(1)
• Integrated ESD Protection
• 200°C Capable Plastic Package
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MW4IC915GNBR1
V
R
D
2
2
G ND
V
1
2
3
4
5
G N D
C
1
1
6
5
V
R
G
R
D
2
N
V
V
V
R
G
2
1
1
D
S
V
D
S
1
n
R
D
R
F
o ut
/
R
F
6
1
4
i
n
1
V
D
S
2
R
F
V / RF
D S 2 o u t
i
V
R
G
7
8
9
V
V
G
S
S
C
1
2
V
R
D
1
1
G
N
N
1
0
1
1
3
2
N
C
V
R
G
G
D
G
N
D
1
1
(Top View)
V
G
S
1
Q
u
i
e
s
c
e
n
t
C
u
r
r
e
n
t
T
e
m
p
e
r
a
t
u
r
e
C
o
m
p
e
n
s
a
t
i
o
n
V
G
Note: Exposed backside flag is source
terminal for transistors.
S
2
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5. +65
-0.5. +15
-65 to +175
200
Unit
Vdc
Vdc
°C
Drain-Source Voltage
V
DSS
Gate-Source Voltage
V
GS
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
°C
Table 2. Thermal Characteristics
(1)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value
Unit
R
°C/W
θ
JC
GSM Application
(P = 15 W CW)
out
Stage 1, 26 Vdc, I = 60 mA
7.3
1.7
DQ
Stage 2, 26 Vdc, I = 240 mA
DQ
GSM EDGE Application
(P = 7.5 W CW)
out
Stage 1, 26 Vdc, I = 60 mA
7.3
1.8
DQ
Stage 2, 26 Vdc, I = 240 mA
DQ
CDMA Application
(P = 3.75 W CW)
out
Stage 1, 26 Vdc, I = 60 mA
7.4
1.9
DQ
Stage 2, 26 Vdc, I = 240 mA
DQ
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
Machine Model
1 (Minimum)
M3 (Minimum)
C2 (Minimum)
Charge Device Model
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
= 90 mA, I = 240 mA, P = 15 W PEP,
DQ2
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 26 Vdc, I
DS
DQ1
out
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz, Two-Tone
Power Gain
G
29
31
31
—
—
dB
%
ps
Power Added Efficiency
Intermodulation Distortion
Input Return Loss
PAE
IMD
IRL
29
—
—
-40
-15
-29
-10
dBc
dB
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued )
C
Characteristic
Symbol Min
= 60 mA, I = 240 mA, 869 MHz<Frequency>960 MHz
DQ2
Typ
Max
Unit
Typical Performances (In Freescale Reference Board) V = 26 V, I
DS
DQ1
Quiescent Current Accuracy over Temperature
with 1.8 kΩ Gate Feed Resistors (-10 to 85°C)
ΔI
QT
—
5
—
%
(1)
Gain Flatness in 40 MHz Bandwidth @ P = 3 W CW
G
—
0.2
—
—
—
—
dB
°
out
F
Deviation from Linear Phase in 40 MHz Bandwidth @ P = 3 W CW
Φ
—
0.6
out
Delay @ P = 3 W CW Including Output Matching
Delay
—
2.5
ns
°
out
Part-to-Part Phase Variation @ P = 3 W CW
ΔΦ
—
15
out
Typical GSM/GSM EDGE Performances (In Freescale Reference Board) V = 26 V, I
= 60 mA, I = 240 mA,
DQ2
DS
DQ1
869 MHz<Frequency<960 MHz
Output Power, 1dB Compression Point
Power Gain @ P = 15 W CW
P1dB
—
—
—
—
—
20
30
—
—
—
—
—
Watts
dB
G
out
ps
Power Added Efficiency @ P = 15 W CW
PAE
IRL
44
%
out
Input Return Loss @ P = 15 W CW
-15
1.5
dB
out
Error Vector Magnitude @ P = 3 W Avg. including
EVM
% rms
out
0.6% rms source EVM
Spectral Regrowth at 400 kHz Offset @ P = 3 W Avg.
SR1
SR2
—
—
-65
-83
—
—
dBc
dBc
out
Spectral Regrowth at 600 kHz Offset @ P = 3 W Avg.
out
1. Refer to AN1977/D, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977.
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
3
L
1
V
D S 2
+
+
1
2
3
4
5
1
1
6
5
V
T
C
1
0
C
1
1
1
C
1
5
C
1
4
D
S
1
N
C
+
C
1
C
2
C
3
R F
I N PU
R
F
C
C
1
1
2
3
O
U
T
P
U
T
C
1
6
Z
1
Z
2
Z
3
Z
4
Z
8
Z9
1
4
M
M4
6
Z
5
Z
3
7
7
8
9
V
R
1
G
G
S
S
1
2
Z
6
+
M
2
M
C
6
C
5
C
C
4
7
N
C
1 3
Q
u
i
e
s
c
e
n
t
C
u
r
r
e
n
t
1
0
NC
Tem
pe
r
a
t u
r
e
C
o
m
p
e
n
s
a
t io n
11
1 2
V
R
2
+
C
9
C
8
Z1
Z2
Z3
Z4
Z5
0.086″, 50 W Microstrip
Z6
Z7
Z8
Z9
0.157″ x 0.283″ Microstrip
0.429″ x 0.283″ Microstrip
0.394″ x 0.088″ Microstrip
0.181″ x 0.088″ Microstrip
0.133″ x 0.236″ Microstrip
0.435″ x 0.283″ Microstrip
0.171″ x 0.283″ Microstrip
0.429″ x 0.283″ Microstrip
PCB
Taconic TLX8, 0.030″, ε = 2.55
r
Figure 3. MW4IC915NBR1(GNBR1) Test Fixture Schematic
Table 6. MW4IC915NBR1(GNBR1) Test Fixture Component Designations and Values
Part
C1, C6, C9, C14
Description
22 mF, 35 V Tantalum Chip Capacitors
1000 pF Chip Capacitors
Part Number
TAJE226M035R
Manufacturer
AVX
C2, C5, C8, C11
C3, C4, C7, C10, C16
C12, C13
100B102JCA500X
100B220JCA500X
100B100JCA500X
ATC
ATC
ATC
22 pF Chip Capacitors
10 pF Chip Capacitors
C15
10 mF Tantalum Chip Capacitor
12.5 nH Inductor
T491X226K035AS4394 Kemet
L1
M1, M2, M3, M4
R1, R2
0.283″, 90_ Mitered Microstrip Bends
10 kΩ, 1/4 W Chip Resistor (1206)
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
4
C
1
V
D
V
D S
S
1
2
C
1
4
MW4IC915MB
Rev 0
C
C
2
3
C11
C1 5
C1 0
1
L
C1 6
C
1
1
2
C
3
C
4
C
5
C
C
7
8
C
1
6
C
9
R
V
G
V
G S
S
1
2
R
2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. MW4IC915NBR1(GNBR1) Test Fixture Component Layout
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
5
V
D
S
+
C
4
C
5
C
6
1
2
3
4
5
1
1
6
5
R
1
N
C
+
C
7
C
1
0
C 9
R F
I N PUT
R
F
C
1
1
5
C2
O
U
T
P
U
T
C
3
Z
1
Z
2
Z
3
Z
4
Z5
Z
6
Z7
1
4
6
C
7
8
9
N
C
1
3
2
Q
u
i
e
s
c
e
n
t
C
u
r
r
e
n
t
1
0
N
C
Tem
pe
ra
t u
r
e
C
o
m
p
e
n
s
a
t i on
1
1
1
V
G S
R
2
+
R
7
P
2
C
8
C
1
1
C
1
2
C1 6
R
4
R
3
R
6
P
1
C
1
3
C
1
4
C1 7
R
5
Z1
Z2
Z3
Z4
0.681″ x 0.039″, 50 W Microstrip
0.157″ x 0.228″ Microstrip
0.468″ x 0.157″ Microstrip
0.220″ x 0.157″ Microstrip
Z5
Z6
Z7
0.566″ x 0.043″ Microstrip
0.165″ x 0.043″ Microstrip
0.078″ x 0.043″ Microstrip
PCB
Taconic RF35, 0.02″, ε = 3.5
r
Figure 5. MW4IC915NBR1(GNBR1) Reference Board Schematic
Table 7. MW4IC915NBR1(GNBR1) Reference Board Component Designations and Values
Part
Description
Part Number
08051J100GBT
08051J5R6BBT
08051J330GB
08055C103KAT
TAJE226MO35R
08055C104KAT
3224W
Manufacturer
C1, C15
C2
10 pF Chip Capacitors (0805), ACCU-P
5.6 pF Chip Capacitor (0805), ACCU-P
33 pF Chip Capacitors (0805), ACCU-P
10 nF Chip Capacitors (0805)
AVX
AVX
AVX
AVX
AVX
AVX
Bourns
C3, C4, C9, C11, C13
C5, C10, C12, C14
C6, C7, C8
22 mF, 35 V Tantalum Capacitors
100 nF Chip Capacitors (0805)
C16, C17
P1, P2
5 kΩ Potentiometer CMS Cermet Multi-turn
0 Ω, 1/8 W Chip Resistors (0805)
10 kΩ, 1/4 W Chip Resistors (1206)
R1, R2, R3, R4, R5
R6, R7
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
6
V
D
G RO UN D
D
R
1
C
6
C
7
C
5
C
4
C 10
9
C
C
1
1
5
C
2
C
3
C1 3
C
C11
C 14
C 12
R
7
R
6
MW4IC915MB
Rev 0
C1 7
1
P
P 2
C
1
6
R
5
C
8
R
4
R
3
R2
V
G G
G RO UND
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 6. MW4IC915NBR1(GNBR1) Reference Board Component Layout
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS (FREESCALE TEST FIXTURE, 50 OHM SYSTEM)
3
3
3
2
2
2
2
2
1
4
2
0
8
6
4
2
0
8
0
−
−
−
−
−
−
−
−
−
G
p
s
8
1
2
3
4
4
5
6
7
PAE
6
4
2
0
8
6
4
2
I
R
L
I MD3
V
P
=
=
=
2 6 V d c
D
D
t
1
5
W
m
(
PE P)
o u
I
D
9
0
A
, I
=
24 0 m A
Q
1
D
Q
2
Tw
o
− T
o ne
Me
a
s
u
r
e
m
e nt
1
6
4
1
0
0
k
H
z
T
o
n
e
S
p
a
c
i
n
g
1
−
8
0
8
6
0
8
8
0
9
0
0
9
2
0
9
4
0
9
6
0
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
Figure 7. Two-Tone Wideband Circuit Performance @ Pout = 15 Watts PEP
3
3
3
2
2
2
2
2
4
2
0
8
6
4
2
0
0
−
−
−
−
−
−
−
− 20
− 30
− 40
− 50
− 60
− 70
− 80
− 90
G
3
r
d
O
r
d
e
r
p
s
7
1
2
2
3
4
4
4
1
8
5
2
9
5
t
h
h
O
r
d
e
r
r
I
R
L
V
P
=
=
=
2
6 V d c
W
D
D
t
7
t
O
r
d
e
6
(
P
E
P
)
o
u
I
D
9
0
mA , I
D Q2
=
2
4
0
m
A
Q
1
T
w
o
−
T
o
n
e
M
e
a
s u
r
e
m
ent
I
MD
3
1
0
0
kH
z
T
o
n
e
S
p
a
c
i n
g
PAE
V
=
=
2 6 V d c
m A, I
D
D
18
16
14
−
−
5
6
3
I
D
9
0
=
24 0 mA
Q
1
D Q 2
f
=
9
60
MHz
6
1 0
0
kH
z
To ne
S
p
a
c
i
n
g
− 70
8
60
8
80
9
0
0
9
2
0
9
4
0
9
6
0
0
.
1
1
1
0
1
0
0
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
P , OU T PU T
o u t
P
O
W
E
R
(
W
A
T
T
S
)
A
v
g
.
Figure 8. Two-Tone Wideband Circuit Performance
@ Pout = 6 Watts
Figure 9. Intermodulation Distortion Products
versus Output Power
TYPICAL CHARACTERISTICS (FREESCALE REFERENCE BOARD)
3
3
3
3
3
2
2
2
4
5
6
3 5
3 4
3 3
3 2
3 1
3 0
2 9
2 8
T
=
=
−
3
0
_
C
C
2
5_
C
−
3
0_
C
3
2
1
0
9
8
7
4
4
8
0
T
=
−
3
0 _
C
V
=
=
2 6 Vd c
m A, I
C
D
D
I
f
6
0
240 m A
D
Q
1
D Q2
G
p s
=
9
1
0
MH z
V
P
=
=
=
2
6 V d c
W CW
D
D
t
8
5_
C
2
5_
5_
C
C
3
o u
3
2
2
4
I
D
6
0
m A,
I
= 24 0 m A
D Q 2
Q
1
2
8
5
_
C
C
P A E
8
1
8
6
5_
0
0
.
1
1
1
0
1 00
8
6
0
8
70
8
8
0
8
9
0
9
0
0
9
1
0
9
2
0
9
3
0
9
4
0
9
5
0
9
6
0
P ,
out
O
U
T
P
U
T
P
O
W
E
R
(
W
A
T
T
S
)
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
Figure 10. Power Gain and Power Added Efficiency
versus Output Power
Figure 11. Power Gain versus Frequency
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
8
TYPICAL CHARACTERISTICS (FREESCALE REFERENCE BOARD) - CONTINUED
3
3
3
3
3
4
3
2
1
0
2
1
T
=
−
3
0 _
C
C
2
1
0
9
V
P
=
=
=
26 V d c
P 1dB
D
D
t
o u
T
=
−
3
0 _
C
C
I
D
6
0
mA ,
I = 2 40 mA
D Q2
Q
1
2
8
5_
5_
C
C
2
5_
C
8
5
_
C
1
8
7
V
P
=
=
=
2
6 V d c
W CW
D
D
t
2
9
8
3
o u
I
D
6
0
m A,
I
=
0
24 0 m A
Q
1
D
Q
2
2
1
8
60
8
70
8
8
0
8
9
0
9
0
0
9
1
0
9
2
0
9
3
0
9
4
0
9
50
9
60
8
60
8
70
8
80
8
9
0
9
0
0
9
1
0
9
2
0
9
3
0
9
4
9
5
0
9
6
0
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
Figure 13. Power Added Efficiency versus
Frequency
Figure 12. Power Gain versus Frequency
−
−
−
−
5
5
6
6
0
4
5
3
5
2
5
1
5
0
2
5
_
C
V
=
=
2
6
V
d
c
D
D
3
.
.
.
.
I
D
6
0
m
A
,
I
=
2
4
0
m
A
Q
1
D
Q
2
5
0
5
2
5
_
C
E
D
G
E
M
o
d
u
l
a
t i
o
n
T
=
8 5_
C
C
f = 91 0 MH z
−
3
0_
C
−
3
0_
C
2
1
0
T
=
8
5
_
C
C
−
70
V
=
=
2 6 V d c
D
D
I
60
m A,
I
D
= 24 0 m A
Q 2
D Q
1
−
7
5
0
E
D G E M od ul at ion
f
=
9
10
MHz
−
8
0
.
1
1
1
0
1 0 0
0
.
1
1
1
0
1
0
0
P ,
o u t
O U TP UT
P O WE R
(
W
A
T
T
S
)
P
o ut
,
O
U
T
P
U
T
P
O
W
E
R
(
W
A
T
T
S
)
A
V
G
.
Figure 15. Spectral Regrowth at 400 kHz
versus Output Power
Figure 14. Error Vector Magnitude versus
Output Power
−
7
0
V
=
=
26 Vd c
m A, I =
D
D
− 72
− 74
− 76
− 78
I
D
6
0
2
4
0
m
A
Q
1
D
Q
2
E DG E M odu la ti on
f = 910 M Hz
T
=
−
3
0
_
C
C
8
5
_
C
2
5
_
C
− 80
− 82
− 84
− 86
0
.
1
1
1
0
1
0
0
P , O U TP UT P OW E R (WATTS )
o u t
Figure 16. Spectral Regrowth at 600 kHz
versus Output Power
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
9
Z
=
5 Ω
o
Z
lo a d
f
=
9
0
0
M
H
z
f
= 9 80 MH z
V
D
=
26
V,
I
DQ 1
=
60
m A,
I
D Q 2
=
2
4
0
m
A
,
P
o u t
= P 1d B
D
f
Z
load
MHz
Ω
900
910
920
3.23 - j4.30
3.24 - j4.36
3.25 - j4.42
930
940
950
3.25 - j4.47
3.23 - j4.52
3.21 - j4.56
960
970
980
3.16 - j4.60
3.11 - j4.65
3.04 - j4.70
Z
load
=
Test circuit impedance as
measured from drain to ground.
O
u
t
p
u
t
D
U
e
vi ce
d e r Te s t
M i
Ne t wo rk
a
t
c
h
n
g
n
Z
Z
in
load
Figure 17. Series Equivalent Input and Load Impedance
MW4IC915NBR1 MW4IC915GNBR1
10
RF Device Data
Freescale Semiconductor
NOTES
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
11
NOTES
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
12
NOTES
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
13
PACKAGE DIMENSIONS
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
14
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
15
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
16
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
17
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
18
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
19
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MW4IC915N
Rev. 7, 5/2006
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