RO4350B [FREESCALE]
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs; 射频功率场效应晶体管N - 沟道增强 - 模式横向的MOSFET
| 型号： | RO4350B |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| 文件： | 总13页 (文件大小：863K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6V13250H
Rev. 0, 6/2011
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V13250HR3
MRF6V13250HSR3
RF Power transistors designed for applications operating at 1300 MHz.
These devices are suitable for use in pulsed and CW applications.
•
Typical Performance: VDD = 50 Volts, IDQ = 100 mA
P
(W)
f
G
(dB)
η
(%)
IRL
(dB)
out
ps
D
Signal Type
(MHz)
1300 MHz, 250 W, 50 V
LATERAL N--CHANNEL
RF POWER MOSFETs
Pulsed (200 μsec,
10% Duty Cycle)
250 Peak
1300
22.7
57.0
-- 1 8
•
Typical Performance: VDD = 50 Volts, IDQ = 10 mA, TC = 25°C
P
(W)
f
G
(dB)
η
(%)
IRL
(dB)
out
ps
D
Signal Type
(MHz)
CW
230 CW
1300
21.0
55.0
-- 1 7
•
•
Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz
at all Phase Angles
CASE 465--06, STYLE 1
NI--780
•
250 Watts Pulsed Peak Power, 10% Duty Cycle, 200 μsec
MRF6V13250HR3
CW Capable
Features
•
•
•
•
•
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Characterized from 20 V to 50 V for Extended Power Range
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
CASE 465A--06, STYLE 1
NI--780S
MRF6V13250HSR3
•
•
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 12.
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +120
--6.0, +10
-- 65 to +150
150
Unit
Vdc
Vdc
°C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
°C
(1,2)
T
J
225
°C
Total Device Dissipation @ T = 25°C
P
476
W
C
D
Derate above 25°C
2.38
W/°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
°C/W
Pulsed: Case Temperature 65°C, 250 W Pulsed, 200 μsec Pulse Width, 10% Duty
Cycle, 50 Vdc, I = 100 mA, 1300 MHz
CW: Case Temperature 77°C, 235 W CW, 50 Vdc, I
Z
R
θ
JC
0.07
0.42
θ
DQ
JC
= 10 mA, 1300 MHz
DQ
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2 (Minimum)
B (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
I
—
120
—
—
—
—
—
1
μAdc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 50 mA)
V
—
10
20
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
μAdc
μAdc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
(V = 90 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 640 μAdc)
V
V
1.0
2.0
0.1
1.8
2.4
2.7
3.0
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I = 100 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 1.58 Adc)
V
0.25
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
1.2
58
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
340
iss
(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 100 mA, P = 250 W Peak (25 W Avg.), f = 1300 MHz
DD
DQ
out
Pulsed, 200 μsec Pulse Width, 10% Duty Cycle
Power Gain
G
21.5
53.5
—
22.7
57.0
-- 1 8
24.0
—
dB
%
ps
D
Drain Efficiency
η
Input Return Loss
IRL
-- 9
dB
Typical Performance (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 10 mA, P = 230 W CW, f = 1300 MHz, T = 25°C
DD
DQ
out
C
Power Gain
G
—
21.0
55.0
-- 1 7
—
—
—
dB
%
ps
Drain Efficiency
Input Return Loss
η
—
—
D
IRL
dB
Load Mismatch (In Freescale Application Test Fixture, 50 ohm system) V = 50 Vdc, I = 100 mA, P = 250 W Peak (25 W Avg.),
DD
DQ
out
f = 1300 MHz, Pulsed, 200 μsec Pulse Width, 10% Duty Cycle
VSWR 10:1 at all Phase Angles
Ψ
No Degradation in Output Power
1. Part internally input matched.
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
2
Z19
Z10
R1
V
V
SUPPLY
BIAS
+
+
+
C7
C8
C9
C10 C11
C12
C1
C2
C3
Z4
C4
Z7
Z18
RF
OUTPUT
Z9
Z11
Z12
Z13
Z14
Z15 Z16
Z17
RF
INPUT
C6
Z1
Z2
Z3
Z5
Z6
Z8
C5
DUT
Z20
Z21
V
SUPPLY
+
C18
C17 C16 C15 C14
C13
Z1
0.447″ x 0.063″ Microstrip
0.030″ x 0.084″ Microstrip
0.120″ x 0.063″ Microstrip
0.855″ x 0.293″ Microstrip
0.369″ x 0.825″ Microstrip
0.203″ x 0.516″ Microstrip
0.105″ x 0.530″ Microstrip
0.105″ x 0.530″ Microstrip
0.116″ x 0.050″ Microstrip
0.122″ x 0.050″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18, Z20
Z19*, Z21*
0.162″ x 1.160″ Microstrip
0.419″ x 1.160″ Microstrip
0.468″ x 0.994″ Microstrip
0.131″ x 0.472″ Microstrip
0.264″ x 0.222″ Microstrip
0.500″ x 0.111″ Microstrip
0.291″ x 0.063″ Microstrip
0.105″ x 0.388″ Microstrip
0.854″ x 0.052″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9*
Z10
*Line length includes microstrip bends.
Figure 1. MRF6V13250HR3(HSR3) Test Circuit Schematic — 1300 MHz
Table 5. MRF6V13250HR3(HSR3) Test Circuit Component Designations and Values — 1300 MHz
Part
Description
22 μF, 35 V Tantalum Capacitors
0.1 μF, 50 V Chip Capacitors
100 pF Chip Capacitors
Part Number
Manufacturer
Kemet
C1, C2
T491X226K035AT
C3, C11, C14
C4, C6, C7, C18
C5
CDR33BX104AKWS
ATC800B101JT500XT
ATC100B4R7CT500XT
ATC100B102JT50XT
ATC700B102FT50XT
ATC200B103KT50XT
MCGPR63V477M13X26--RH
CRCW120615R0FKEA
RO4350B
AVX
ATC
4.7 pF Chip Capacitor
ATC
C8, C17
C9, C16
C10, C15
C12, C13
R1
1000 pF Chip Capacitors
1000 pF Chip Capacitors
10K pF Chip Capacitors
ATC
ATC
ATC
470 μF, 63 V Electrolytic Capacitors
15 Ω, 1/4 W Chip Resistor
Multicomp
Vishay
Rogers
PCB
0.030″, ε = 3.50
r
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
3
C7
C9 C11
C3
C4
C12
R1
C1 C2
C8 C10
C5
C6
C17 C15
C18
C13
MRF6V13250H/HS
Rev 3
C16 C14
Figure 2. MRF6V13250HR3(HSR3) Test Circuit Component Layout — 1300 MHz
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS — PULSED
1000
100
10
60
V
= 50 Vdc, I = 100 mA, f = 1300 MHz
DQ
DD
Ideal
Pulse Width = 200 μsec, Duty Cycle = 10%
59
58
57
C
iss
P3dB = 55.4 dBm
(345 W)
C
oss
P2dB = 55.1 dBm
(326 W)
56
55
P1dB = 54.7 dBm
(293 W)
Measured with ±30 mV(rms)ac @ 1 MHz
= 0 Vdc
Actual
V
GS
C
rss
54
53
1
0
10
20
30
40
50
30
31
32
33
34
35
36
37
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
P , INPUT POWER (dBm) PULSED
in
DS
Figure 3. Capacitance versus Drain--Source Voltage
Figure 4. Pulsed Output Power versus
Input Power
24
23
70
60
25
23
V
= 50 Vdc, I = 100 mA, f = 1300 MHz
DQ
DD
Pulse Width = 200 μsec Duty Cycle = 10%
21
19
22
21
50
40
V
= 50 V
DD
45 V
G
ps
40 V
30
20
17
20
19
35 V
200
30 V
150
15
13
11
η
D
I
= 100 mA, f = 1300 MHz
Pulse Width = 200 μsec
DQ
25 V
10
0
18
17
Duty Cycle = 10%
20 V
100
1
10
100
500
0
50
250
300
350
400
P
, OUTPUT POWER (WATTS) PULSED
P , OUTPUT POWER (WATTS) PULSED
out
out
Figure 6. Pulsed Power Gain versus
Output Power
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
24
23
70
70
-- 3 0 _C
V
= 50 Vdc
= 100 mA
DD
V
= 50 V
DD
45 V
I
DQ
40 V
60
50
60
50
35 V
f = 1300 MHz
Pulse Width = 200 μsec
Duty Cycle = 10%
G
ps
30 V
22
21
20
19
25 V
40
30
20 V
85_C
25_C
40
30
20
10
T
= --30_C
C
η
D
20
25_C
I
= 100 mA, f = 1300 MHz
Pulse Width = 200 μsec
DQ
10
0
18
17
Duty Cycle = 10%
85_C
3
10
100
500
0
50
100
150
200
250
300
350
400
P
, OUTPUT POWER (WATTS) PULSED
P
, OUTPUT POWER (WATTS) PULSED
out
out
Figure 7. Pulsed Efficiency versus
Output Power
Figure 8. Pulsed Power Gain and Drain Efficiency
versus Output Power
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS — CW
24
23
60
55
50
22
21
20
19
45
40
G
ps
35
30
25
20
15
10
18
17
16
η
D
V
= 50 Vdc
= 10 mA
DD
I
DQ
f = 1300 MHz
= 25°C
15
14
T
C
10
100
, OUTPUT POWER (WATTS) CW
400
P
out
Figure 9. CW Power Gain and Drain Efficiency versus Output Power
60
55
25
24
23
10 mA
100 mA
I
= 700 mA
DQ
50
45
40
350 mA
500 mA
500 mA
350 mA
22
21
20
19
18
I
= 700 mA
DQ
35
30
25
100 mA
10 mA
V
= 50 Vdc
V
= 50 Vdc
DD
DD
20
15
10
f = 1300 MHz
= 25°C
f = 1300 MHz
T = 25°C
C
17
16
T
C
10
100
, OUTPUT POWER (WATTS) CW
400
10
100
, OUTPUT POWER (WATTS) CW
400
P
P
out
out
Figure 11. CW Efficiency versus Output Power
Figure 10. CW Power Gain versus Output Power
9
10
8
10
7
10
6
10
5
10
4
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 50 Vdc, P = 230 W CW, and η = 55%.
DD
out
D
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature — CW
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
6
Z = 10 Ω
o
Z
source
Z
load
f = 1300 MHz
f = 1300 MHz
V
= 50 Vdc, I = 100 mA, P = 250 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
1300
5.32 + j4.11
1.17 + j1.48
Z
=
Test circuit impedance as measured from
gate to ground.
source
Z
load
=
Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 13. Series Equivalent Source and Load Impedance — Pulsed
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
8
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
9
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
10
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF6V13250H and MRF6V13250HS parts will be available for 2 years after release of
MRF6V13250H and MRF6V13250HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF6V13250H and MRF6V13250HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
June 2011
• Initial Release of Data Sheet
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
12
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Document Number: MRF6V13250H
Rev. 0, 6/2011
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