SQ2348ES [FREESCALE]
Automotive N-Channel 30 V (D-S) 175 °C MOSFET; 汽车N沟道30 V （D -S ）， 175 ℃的MOSFET
| 型号： | SQ2348ES |
| 厂家： | 
Freescale |
| 描述： | Automotive N-Channel 30 V (D-S) 175 °C MOSFET |
| 文件： | 总7页 (文件大小：565K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQ2348ES
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
30
0.024
0.032
8
R
DS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
D (A)
Configuration
FEATURES
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
I
Single
• 100 % Rg and UIS Tested
D
TO-236
• Material categorization:
(SOT-23)
For definitions of compliance please see
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G
S
1
2
3
D
G
Top View
S
SQ2348ES*
N-Channel MOSFET
* Marking Code: 8Gxxx
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and Halogen-free
SQ2348ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
20
T
C = 25 °C
8
Continuous Drain Current
ID
TC = 125 °C
5.3
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
IS
3.8
A
IDM
IAS
EAS
32
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
15.5
L = 0.1 mH
TC = 25 °C
12
mJ
W
3
Maximum Power Dissipationa
PD
T
C = 125 °C
1
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
166
50
UNIT
Junction-to-Ambient
PCB Mountb
°C/W
Junction-to-Foot (Drain)
RthJF
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
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1 / 7
SQ2348ES
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
30
1.5
-
-
-
V
2.0
2.5
VDS = 0 V, VGS
=
20 V
-
100
1
nA
μA
A
VGS = 0 V
VGS = 0 V
GS = 0 V
VDS = 30 V
VDS = 30 V, TJ = 125 °C
VDS = 30 V, TJ = 175 °C
VDS5 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
-
-
50
V
-
-
150
-
ID(on)
VGS = 10 V
VGS = 10 V
10
-
-
0.020
-
ID = 12 A
0.024
0.036
0.042
0.032
-
V
GS = 10 V
VGS = 10 V
GS = 4.5 V
ID = 12 A, TJ = 125 °C
ID = 12 A, TJ = 175 °C
ID = 8 A
-
Drain-Source On-State Resistancea
RDS(on)
-
-
V
-
0.026
10
Forward Transconductanceb
Dynamicb
gfs
VDS = 15 V, ID = 3 A
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
430
100
40
540
125
50
14.5
-
VGS = 0 V
VDS = 15 V, f = 1 MHz
-
pF
-
-
7.95
1.6
1.3
17.3
4.5
8
Qgs
Qgd
Rg
VGS = 10 V
VDS = 15 V, ID = 5.5 A
f = 1 MHz
-
nC
-
-
8.65
27
7
td(on)
tr
td(off)
tf
-
-
-
-
12
32
9
V
DD = 15 V, RL = 3.4
ns
ID 4.4 A, VGEN = 10 V, Rg = 1
21
6
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
32
A
V
Forward Voltage
VSD
IF = 3.5 A, VGS = 0 V
0.8
1.2
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SQ2348ES
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
25
20
15
10
5
25
20
15
10
5
VGS = 10 V thru 4 V
TC = 25 °C
VGS = 3 V
TC = 125 °C
TC = - 55 °C
0
0
0
1
2
3
4
5
0
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
4
3
2
1
0
30
24
18
12
6
TC = - 55 °C
T
C = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0
0
1
2
3
4
5
0
1
2
3
4
5
6
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Transconductance
0.10
0.08
0.06
0.04
0.02
0
700
560
420
280
140
0
Ciss
VGS = 4.5 V
VGS = 10 V
Coss
Crss
0
5
10
15
20
25
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
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SQ2348ES
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
8
2.0
ID = 5.5 A
ID = 5.5 A
DS = 15 V
V
1.7
1.4
1.1
0.8
0.5
6
VGS = 10 V
4
VGS = 4.5 V
2
0
0
2
4
6
8
10
- 50 - 25
0
25
50
75 100 125 150 175
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
0.15
0.12
0.09
0.06
0.03
0.00
TJ = 150 °C
1
0.1
TJ = 25 °C
TJ = 150 °C
0.01
TJ = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.2
40
38
36
34
32
30
ID = 1 mA
- 0.1
- 0.4
- 0.7
- 1.0
ID = 5 mA
ID = 250 μA
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Temperature (°C)
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
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SQ2348ES
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
10
1
100 μs
1 ms
10 ms
Limited by RDS(on)
*
100 ms
BVDSS Limited
0.1
1 s, 10 s, DC
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
0.02
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 166 °C/W
thJA
(t)
3. T - T = P
Z
JM DM thJA
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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SQ2348ES
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
10
1
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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SQ2348ES
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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