SQ4184EY [FREESCALE]
Automotive N-Channel 40 V (D-S) 175 °C MOSFET; 汽车N沟道40 V （D -S ）， 175 ℃的MOSFET
| 型号： | SQ4184EY |
| 厂家： | 
Freescale |
| 描述： | Automotive N-Channel 40 V (D-S) 175 °C MOSFET |
| 文件： | 总10页 (文件大小：882K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQ4184EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
40
FEATURES
• TrenchFET® Power MOSFET
RDS(on) () at VGS = 10 V
0.0046
0.0056
29
RDS(on) () at VGS = 4.5 V
• AEC-Q101 Qualified
ID (A)
• 100 % Rg and UIS Tested
Configuration
Single
• Material categorization:
For definitions of compliance please see
D
SO-8
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S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
SO-8
Lead (Pb)-free and Halogen-free
SQ4184EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
40
V
VGS
20
T
C = 25 °C
29
Continuous Drain Current
ID
TC = 125 °C
16.9
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
IS
6.4
A
IDM
IAS
EAS
84
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
50
125
L = 0.1 mH
mJ
W
TC = 25 °C
7.1
Maximum Power Dissipationa
PD
TC = 125 °C
2.3
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
80
UNIT
Junction-to-Ambient
PCB Mountb
°C/W
Junction-to-Foot (Drain)
RthJF
21
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (Fr-4 material).
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1 / 10
SQ4184EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
STATIC
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
40
1.5
-
-
2.0
-
-
V
2.5
VDS = 0 V, VGS
VGS = 0 V
=
20 V
100
1
nA
μA
A
VDS = 40 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
V
GS = 0 V
GS = 0 V
VDS = 40 V, TJ = 125 °C
VDS = 40 V, TJ = 175 °C
VDS5 V
-
-
50
250
-
V
-
-
ID(on)
VGS = 10 V
GS = 10 V
VGS = 10 V
GS = 10 V
VGS = 4.5 V
30
-
-
V
ID = 14 A
0.0036 0.0046
ID = 14 A, TJ = 125 °C
ID = 14 A, TJ = 175 °C
ID = 12 A
-
-
-
0.0070
0.0083
Drain-Source On-State Resistancea
RDS(on)
V
-
-
0.0046 0.0056
Forward Transconductanceb
DYNAMICb
gfs
VDS = 15 V, ID = 14 A
-
78
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
-
4319
512
240
72
5400
640
300
110
-
V
GS = 0 V
VDS = 20 V, f = 1 MHz
pF
-
-
Qgs
Qgd
Rg
VGS = 10 V
VDS = 20 V, ID = 5 A
f = 1 MHz
-
13
nC
-
11
-
1.2
-
2.57
15
3.9
25
td(on)
tr
td(off)
tf
-
46
70
V
DD = 20 V, RL = 4
ns
ID 5 A, VGEN = 10 V, Rg = 1
-
56
85
-
15
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICSb
Pulsed Currenta
ISM
-
-
-
84
A
V
Forward Voltage
VSD
IF = 6 A, VGS = 0 V
0.75
1.2
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2 / 10
SQ4184EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
75
60
45
30
15
0
75
60
45
30
15
0
VGS = 10 V thru 4 V
TC = 25 °C
VGS = 3 V
TC = 125 °C
TC = - 55 °C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
150
120
90
60
30
0
1.5
1.2
0.9
0.6
0.3
0.0
TC = - 55 °C
TC = 25 °C
TC = 25 °C
TC = 125 °C
TC = 125 °C
TC = 55 °C
0
4
8
12
16
20
1
2
3
4
5
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Transconductance
6000
5000
4000
3000
2000
1000
0
0.015
0.012
0.009
0.006
0.003
0.000
Ciss
VGS = 4.5 V
VGS = 10 V
Coss
Crss
0
8
16
24
32
40
10
20
30
40
50
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
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SQ4184EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
1.7
1.4
1.1
0.8
0.5
10
ID = 5 A
ID = 5 A
VGS = 10 V
8
VDS = 20 V
6
VGS = 4.5 V
4
2
0
0
20
40
60
80
- 50 - 25
0
25
50
75 100 125 150 175
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
0.025
0.020
0.015
0.010
0.005
0.000
TJ = 150 °C
1
0.1
TJ = 25 °C
TJ = 150 °C
0.01
TJ = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
48
46
44
42
40
0.6
0.3
ID = 1 mA
0.0
- 0.3
- 0.6
- 0.9
- 1.2
ID = 5 mA
ID = 250 μA
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Temperature (°C)
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
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4 / 10
SQ4184EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
100 μs
IDM Limited
10
1 ms
10 ms
Limited by RDS(on)
*
1
0.1
100 ms
1 s
10 s, DC
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
0.05
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 80 °C/W
thJA
0.02
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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5 / 10
SQ4184EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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6 / 10
SQ4184EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
0.004"
q
e
B
A
1
L
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
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7 / 10
SQ4184EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
Mounting LITTLE FOOT®, SO-8 Power MOSFETs
Wharton McDaniel
0.288
7.3
Surface-mounted LITTLE FOOT power MOSFETs use
integrated circuit and small-signal packages which have
0.050
1.27
0.088
2.25
been been modified to provide the heat transfer capabilities
required by power devices. Leadframe materials and
design, molding compounds, and die attach materials have
been changed, while the footprint of the packages remains
the same.
0.088
2.25
0.027
0.69
0.078
1.98
0.2
5.07
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, ( www.freescale.net.cn ), for the
basis of the pad design for a LITTLE FOOT SO-8 power
MOSFET. In converting this recommended minimum pad
to the pad set for a power MOSFET, designers must make
two connections: an electrical connection and a thermal
connection, to draw heat away from the package.
Figure 2. Dual MOSFET SO-8 Pad Pattern
With Copper Spreading
The minimum recommended pad patterns for the
single-MOSFET SO-8 with copper spreading (Figure 1) and
dual-MOSFET SO-8 with copper spreading (Figure 2) show
the starting point for utilizing the board area available for the
heat-spreading copper. To create this pattern, a plane of
copper overlies the drain pins. The copper plane connects
the drain pins electrically, but more importantly provides
planar copper to draw heat from the drain leads and start the
process of spreading the heat so it can be dissipated into the
ambient air. These patterns use all the available area
underneath the body for this purpose.
In the case of the SO-8 package, the thermal connections
are very simple. Pins 5, 6, 7, and 8 are the drain of the
MOSFET for a single MOSFET package and are connected
together. In a dual package, pins 5 and 6 are one drain, and
pins 7 and 8 are the other drain. For a small-signal device or
integrated circuit, typical connections would be made with
traces that are 0.020 inches wide. Since the drain pins serve
the additional function of providing the thermal connection
to the package, this level of connection is inadequate. The
total cross section of the copper may be adequate to carry
the current required for the application, but it presents a
large thermal impedance. Also, heat spreads in a circular
fashion from the heat source. In this case the drain pins are
the heat sources when looking at heat spread on the PC
board.
Since surface-mounted packages are small, and reflow
soldering is the most common way in which these are
affixed to the PC board, “thermal” connections from the
planar copper to the pads have not been used. Even if
additional planar copper area is used, there should be no
problems in the soldering process. The actual solder
connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the
drain pins, the solder mask generation occurs automatically.
0.288
7.3
0.050
1.27
0.196
5.0
A final item to keep in mind is the width of the power traces.
The absolute minimum power trace width must be
determined by the amount of current it has to carry. For
thermal reasons, this minimum width should be at least
0.020 inches. The use of wide traces connected to the drain
plane provides a low impedance path for heat to move away
from the device.
0.027
0.69
0.078
1.98
0.2
5.07
Figure 1. Single MOSFET SO-8 Pad
Pattern With Copper Spreading
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8 / 10
SQ4184EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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9 / 10
SQ4184EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
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10 / 10
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