SQD40N04-10A [FREESCALE]

Automotive N-Channel 40 V (D-S) 175 °C MOSFET; 汽车N沟道40 V (D -S ), 175 ℃的MOSFET
SQD40N04-10A
型号: SQD40N04-10A
厂家: Freescale    Freescale
描述:

Automotive N-Channel 40 V (D-S) 175 °C MOSFET
汽车N沟道40 V (D -S ), 175 ℃的MOSFET

晶体 晶体管 脉冲
文件: 总9页 (文件大小:523K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SQD40N04-10A  
Automotive N-Channel  
40 V (D-S) 175 °C MOSFET  
PRODUCT SUMMARY  
FEATURES  
Halogen-free According to IEC 61249-2-21  
Definition  
• TrenchFET® Power MOSFET  
• Package with Low Thermal Resistance  
• 100 % Rg and UIS Tested  
VDS (V)  
40  
0.010  
0.014  
42  
R
DS(on) () at VGS = 10 V  
RDS(on) () at VGS = 4.5 V  
D (A)  
I
Configuration  
Single  
D
• AEC-Q101 Qualifiedd  
TO-252  
• Compliant to RoHS Directive 2002/95/EC  
G
Drain Connected to Tab  
G
D
S
S
Top View  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
TO-252  
SQD40N04-10A-GE3  
Lead (Pb)-free and Halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
40  
V
VGS  
20  
TC = 25 °C  
42  
Continuous Drain Currenta  
ID  
T
C = 125 °C  
35  
Continuous Source Current (Diode Conduction)a  
Pulsed Drain Currentb  
IS  
42  
A
IDM  
IAS  
EAS  
168  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
30  
L = 0.1 mH  
TC = 25 °C  
45  
mJ  
W
71  
24  
Maximum Power Dissipationb  
PD  
T
C = 125 °C  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
50  
UNIT  
Junction-to-Ambient  
PCB Mountc  
°C/W  
Junction-to-Case (Drain)  
RthJC  
2.1  
Notes  
a. Package limited.  
b. Pulse test; pulse width 300 μs, duty cycle 2 %.  
c. When mounted on 1" square PCB (FR-4 material).  
d. Parametric verification ongoing.  
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1 / 9  
SQD40N04-10A  
Automotive N-Channel  
40 V (D-S) 175 ??C MOSFET  
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX. UNIT  
Static  
Drain-Source Breakdown Voltage  
Gate-Source Threshold Voltage  
Gate-Source Leakage  
VDS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250 μA  
40  
1.5  
-
-
-
V
2.0  
2.5  
VDS = 0 V, VGS  
=
20 V  
-
100  
1.0  
nA  
μA  
A
VGS = 0 V  
VGS = 0 V  
GS = 0 V  
VDS = 40 V  
VDS = 40 V, TJ = 125 °C  
VDS = 40 V, TJ = 175 °C  
VDS5 V  
-
-
Zero Gate Voltage Drain Current  
On-State Drain Currenta  
IDSS  
-
-
50  
V
-
-
150  
-
ID(on)  
VGS = 10 V  
VGS = 10 V  
50  
-
-
0.006  
-
ID = 20 A  
0.010  
0.016  
0.019  
0.014  
-
V
GS = 10 V  
VGS = 10 V  
GS = 4.5 V  
ID = 20 A, TJ = 125 °C  
ID = 20 A, TJ = 175 °C  
ID = 20 A  
-
Drain-Source On-State Resistancea  
RDS(on)  
-
-
V
-
0.011  
58  
Forward Transconductanceb  
Dynamicb  
gfs  
VDS = 15 V, ID = 40 A  
-
S
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Chargec  
Gate-Source Chargec  
Gate-Drain Chargec  
Gate Resistance  
Turn-On Delay Timec  
Rise Timec  
Turn-Off Delay Timec  
Fall Timec  
Ciss  
Coss  
Crss  
Qg  
-
-
1755  
385  
250  
46  
2190  
480  
315  
70  
-
VGS = 0 V  
VDS = 25 V, f = 1 MHz  
pF  
-
-
Qgs  
Qgd  
Rg  
VGS = 10 V  
VDS = 20 V, ID = 40 A  
f = 1 MHz  
-
6.2  
13.5  
2.2  
7
nC  
-
-
1.1  
-
3.3  
10  
15  
37  
14  
td(on)  
tr  
td(off)  
tf  
-
10  
VDD = 20 V, RL = 0.5   
ID 40 A, VGEN = 10 V, Rg = 1   
ns  
-
25  
-
9
Source-Drain Diode Ratings and Characteristicsb  
Pulsed Currenta  
ISM  
-
-
-
168  
1.2  
A
V
Forward Voltage  
VSD  
IF = 40 A, VGS = 0 V  
0.8  
Notes  
a. Pulse test; pulse width 300 μs, duty cycle 2 %.  
b. Guaranteed by design, not subject to production testing.  
c. Independent of operating temperature.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
www.freescale.net.cn  
2 / 9  
SQD40N04-10A  
Automotive N-Channel  
40 V (D-S) 175 ??C MOSFET  
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)  
100  
80  
60  
40  
20  
0
120  
100  
80  
60  
40  
20  
0
V
= 10 V thru 6 V  
GS  
V
= 5 V  
GS  
V
= 4 V  
GS  
T
= 25 °C  
C
T
= 125 °C  
C
T
= - 55 °C  
6
C
0
0
0
2
4
8
10  
100  
50  
0
4
8
12  
16  
20  
VGS - Gate-to-Source Voltage (V)  
VDS - Drain-to-Source Voltage (V)  
Transfer Characteristics  
Output Characteristics  
0.05  
0.04  
0.03  
0.02  
0.01  
0
100  
80  
60  
40  
20  
0
V
= 4.5 V  
GS  
T
= - 55 °C  
C
T
= 25 °C  
C
T
= 125 °C  
C
V
= 10 V  
GS  
20  
40  
60  
80  
0
8
16  
24  
32  
40  
I
- Drain Current (A)  
ID - Drain Current (A)  
D
Transconductance  
On-Resistance vs. Drain Current  
10  
8
3000  
2500  
2000  
1500  
1000  
500  
I
= 40 A  
D
C
iss  
V
= 20 V  
DS  
6
4
C
oss  
2
C
rss  
0
0
10  
20  
30  
40  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Drain-to-Source Voltage (V)  
Qg - Total Gate Charge (nC)  
Gate Charge  
Capacitance  
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3 / 9  
SQD40N04-10A  
Automotive N-Channel  
40 V (D-S) 175 ??C MOSFET  
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)  
55  
52  
49  
46  
43  
40  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
I
= 10 mA  
D
I
= 30 A  
D
V
= 10 V  
GS  
- 50 - 25  
0
25  
50  
75 100 125 150 175  
- 50 - 25  
0
25  
TJ - Junction Temperature (°C)  
On-Resistance vs. Junction Temperature  
50  
75 100 125 150 175  
TJ - Junction Temperature (°C)  
Drain Source Breakdown vs. Junction Temperature  
100  
10  
1
0.05  
0.04  
0.03  
0.02  
0.01  
0
T
= 150 °C  
J
T
= 25 °C  
J
0.1  
0.01  
T
= 150 °C  
J
T
= 25 °C  
6
J
0.001  
0
2
4
8
10  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
VGS - Gate-to-Source Voltage (V)  
VSD - Source-to-Drain Voltage (V)  
On-Resistance vs. Gate-to-Source Voltage  
Source Drain Diode Forward Voltage  
0.5  
0.1  
- 0.3  
- 0.7  
- 1.1  
I
= 5 mA  
D
I
= 250 μA  
D
- 1.5  
- 50 - 25  
0
25  
50  
75 100 125 150 175  
TJ - Temperature (°C)  
Threshold Voltage  
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4 / 9  
SQD40N04-10A  
Automotive N-Channel  
40 V (D-S) 175 ??C MOSFET  
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)  
I
Limited  
DM  
100  
Limited by R  
*
DS(on)  
100 μs  
1 ms  
I
Limited  
10  
1
D
10 ms  
100 ms  
1 s, 10 s, DC  
0.1  
T
= 25 °C  
C
Single Pulse  
BVDSS Limited  
0.01  
0.01  
0.1  
1
10  
100  
VDS - Drain-to-Source Voltage (V)  
* VGS > minimum VGS at which RDS(on) is specified  
Safe Operating Area  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
1000  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
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5 / 9  
SQD40N04-10A  
Automotive N-Channel  
40 V (D-S) 175 ??C MOSFET  
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.02  
0.05  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Case  
1
10  
100  
Note  
The characteristics shown in the two graphs  
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)  
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)  
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single  
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part  
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities  
can widely vary depending on actual application parameters and operating conditions.  
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6 / 9  
SQD40N04-10A  
Automotive N-Channel  
40 V (D-S) 175 ??C MOSFET  
TO-252AA CASE OUTLINE  
E
A
MILLIMETERS  
MIN.  
INCHES  
MAX.  
C1  
b2  
DIM.  
A
MAX.  
2.38  
1.14  
0.127  
0.88  
1.14  
5.44  
0.58  
0.58  
6.22  
4.45  
6.73  
5.50  
MIN.  
0.087  
0.035  
0.001  
0.028  
0.030  
0.206  
0.018  
0.018  
0.235  
0.161  
0.255  
0.177  
2.21  
0.89  
0.030  
0.71  
0.76  
5.23  
0.46  
0.46  
5.97  
4.10  
6.48  
4.49  
0.094  
0.045  
0.005  
0.035  
0.045  
0.214  
0.023  
0.023  
0.245  
0.175  
0.265  
0.217  
A1  
A2  
b
b1  
b2  
C
C1  
D
D1  
E
b
C
b1  
E1  
e
e
A2  
2.28 BSC  
4.57 BSC  
9.65  
0.090 BSC  
0.180 BSC  
0.380  
e1  
A1  
e1  
H
10.41  
1.78  
1.02  
1.27  
1.52  
0.410  
0.070  
0.040  
0.050  
0.060  
L
1.40  
0.64  
0.89  
1.15  
0.055  
0.025  
0.035  
0.040  
L1  
L2  
L3  
ECN: T11-0110-Rev. L, 18-Apr-11  
DWG: 5347  
E1  
Note  
Dimension L3 is for reference only.  
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7 / 9  
SQD40N04-10A  
Automotive N-Channel  
40 V (D-S) 175 ??C MOSFET  
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)  
0.224  
(5.690)  
0.180  
(4.572)  
0.055  
(1.397)  
Recommended Minimum Pads  
Dimensions in Inches/(mm)  
Return to Index  
www.freescale.net.cn  
8 / 9  
SQD40N04-10A  
Automotive N-Channel  
40 V (D-S) 175 ??C MOSFET  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively,  
“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vi shay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain type s of applications are based on freestyle’s knowledge of typical  
requirements that are often placed on freestyle products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All  
operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify freestyle’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the freestyle product could result in personal injury or death.  
Customers using or selling freestyle products not expressly indicated for use in such applications do so at their own risk and agr ee  
to fully indemnify and hold freestyle and its distributors harmless from and against an y and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vis hay  
Material Category Policy  
freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the  
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  
(EEE) - recast, unless otherwis e specified as non-compliant.  
Please note that some freestyle documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
all the products identified as being compliant to Directive 2002 /95/EC conform to Directive 2011/65/EU.  
www.freescale.net.cn  
9 / 9  

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