SQD50N03-06P [FREESCALE]
Automotive N-Channel 30 V (D-S) 175 °C MOSFET; 汽车N沟道30 V （D -S ）， 175 ℃的MOSFET
| 型号： | SQD50N03-06P |
| 厂家： | 
Freescale |
| 描述： | Automotive N-Channel 30 V (D-S) 175 °C MOSFET |
| 文件： | 总9页 (文件大小：744K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQD50N03-06P
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
FEATURES
30
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• AEC-Q101 Qualified
R
DS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
D (A)
0.0060
0.0085
50
I
• Material categorization:
For definitions of compliance please see
Configuration
Single
D
TO-252
G
Drain Connected to Tab
S
G
D
S
N-Channel MOSFET
Top View
ORDERING INFORMATION
Package
TO-252
SQD50N03-06P-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
20
TC = 25 °C
TC = 125 °C
50
Continuous Drain Currenta
ID
50
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
50
A
IDM
IAS
EAS
200
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
45
L = 0.1 mH
101
mJ
W
TC = 25 °C
TC = 125 °C
83
27
Maximum Power Dissipationb
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
50
UNIT
Junction-to-Ambient
PCB Mountc
°C/W
Junction-to-Case (Drain)
RthJC
1.8
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
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SQD50N03-06P
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
30
1.5
-
-
2.0
-
-
V
2.5
VDS = 0 V, VGS
=
20 V
100
1
nA
μA
A
VGS = 0 V
VGS = 0 V
GS = 0 V
VDS = 30 V
VDS = 30 V, TJ = 125 °C
VDS = 30 V, TJ = 175 °C
VDS5 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
-
-
50
250
-
V
-
-
ID(on)
VGS = 10 V
VGS = 10 V
50
-
-
ID = 20 A
0.0047 0.0060
V
GS = 10 V
VGS = 10 V
GS = 4.5 V
ID = 20 A, TJ = 125 °C
ID = 20 A, TJ = 175 °C
ID = 20 A
-
-
-
0.0090
0.0107
Drain-Source On-State Resistancea
RDS(on)
-
V
-
0.0067 0.0085
Forward Transconductanceb
Dynamicb
gfs
VDS = 15 V, ID = 20 A
-
74
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
-
3222
563
241
25.2
9.1
9.4
1.6
10
4030
705
300
38
-
VGS = 0 V
VDS = 25 V, f = 1 MHz
pF
-
-
Qgs
Qgd
Rg
VGS = 4.5 V
VDS = 15 V, ID = 50 A
f = 1 MHz
-
nC
-
-
0.5
-
2.8
15
15
39
14
td(on)
tr
td(off)
tf
-
10
VDD = 15 V, RL = 0.3
ID 50 A, VGEN = 10 V, Rg = 1
ns
-
26
-
9
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
200
1.5
A
V
Forward Voltage
VSD
IF = 85 A, VGS = 0 V
1
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SQD50N03-06P
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
140
120
100
80
160
120
80
40
0
VGS = 10 V thru 5 V
VGS = 4 V
60
TC = 25 °C
40
20
VGS = 3 V
12
TC = - 55 °C
TC = 125 °C
0
0
3
6
9
15
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
1.2
0.9
0.6
0.3
0.0
120
100
80
60
40
20
0
TC = - 55 °C
TC = 25 °C
TC = 25 °C
TC = 125 °C
TC = 125 °C
TC = - 55 °C
0
1
2
3
4
5
0
10
20
30
40
50
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Transconductance
0.025
0.020
0.015
0.010
0.005
0.000
5000
4000
3000
2000
1000
0
Ciss
VGS = 4.5 V
VGS = 10 V
Coss
Crss
0
20
40
60
80
100
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
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SQD50N03-06P
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.5
2.0
1.5
1.0
0.5
10
ID = 20 A
ID = 50 A
VDS = 15 V
8
VGS = 10 V
6
VGS = 4.5 V
4
2
0
- 50 - 25
0
25
50
75 100 125 150 175
0
10
20
30
40
50
60
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
0.05
0.04
0.03
0.02
0.01
0.00
TJ = 150 °C
1
0.1
TJ = - 50 °C
TJ = 150 °C
0.01
0.001
TJ = 25 °C
TJ = 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
40
38
36
34
32
30
0.5
0.1
ID = 10 mA
- 0.3
- 0.7
- 1.1
- 1.5
ID = 5 mA
ID = 250 μA
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
TJ - Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
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SQD50N03-06P
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID Limited
100
10
100 μs
1 ms
10 ms
100 ms
1 s,10 s, DC
Limited by RDS(on)
*
1
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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SQD50N03-06P
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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SQD50N03-06P
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
MIN.
INCHES
MAX.
C1
b2
DIM.
A
MAX.
2.38
1.14
0.127
0.88
1.14
5.44
0.58
0.58
6.22
4.45
6.73
5.50
MIN.
0.087
0.035
0.001
0.028
0.030
0.206
0.018
0.018
0.235
0.161
0.255
0.177
2.21
0.89
0.030
0.71
0.76
5.23
0.46
0.46
5.97
4.10
6.48
4.49
0.094
0.045
0.005
0.035
0.045
0.214
0.023
0.023
0.245
0.175
0.265
0.217
A1
A2
b
b1
b2
C
C1
D
D1
E
b
C
b1
E1
e
e
A2
2.28 BSC
4.57 BSC
9.65
0.090 BSC
0.180 BSC
0.380
e1
A1
e1
H
10.41
1.78
1.02
1.27
1.52
0.410
0.070
0.040
0.050
0.060
L
1.40
0.64
0.89
1.15
0.055
0.025
0.035
0.040
L1
L2
L3
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
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SQD50N03-06P
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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SQD50N03-06P
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
Disclaimer
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