SUD45P03-10 [FREESCALE]
P-Channel 30-V (D-S), MOSFET; P通道30 - V（D -S）的MOSFET
| 型号： | SUD45P03-10 |
| 厂家： | 
Freescale |
| 描述： | P-Channel 30-V (D-S), MOSFET |
| 文件： | 总7页 (文件大小：407K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD45P03-10
P-Channel 30-V (D-S), MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFETs
I
D (A)a
- 15
VDS (V)
RDS(on) (Ω)
RoHS
0.010 at VGS = - 10 V
0.018 at VGS = - 4.5 V
COMPLIANT
- 30
- 12
S
TO-252
G
Drain Connected to Tab
G
D
S
D
Top View
Ordering Information: SUD45P03-10-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
- 30
20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
TA = 25 °C
- 15
- 8
Continuous Drain Currentb
ID
TA = 100 °C
A
IDM
IS
Pulsed Drain Current
- 100
- 15
70
Continuous Source Current (Diode Conduction)
TC = 25 °C
TA = 25 °C
Maximum Power Dissipationb
PD
W
4b
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb
RthJA
30
°C/W
RthJC
Maximum Junction-to-Case
1.8
Notes:
a. Calculated Rating for TA = 25 °C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings
and Typical Characteristics).
b. Surface Mounted on FR4 board, t ≤ 10 s.
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SUD45P03-10
P-Channel 30-V (D-S), MOSFET
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VGS(th)
IGSS
VGS = 0 V, ID = - 250 µA
VDS = VGS, ID = - 250 µA
Drain-Source Breakdown Voltage
- 30
V
Gate Threshold Voltage
Gate-Body Leakage
- 1.0
- 3.0
100
- 1
VDS = 0 V, VGS
=
20 V
nA
µA
VDS = - 30 V, VGS = 0 V
DS = - 30 V, VGS = 0 V, TJ = 125 °C
VDS = - 5 V, VGS = - 10 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
V
- 50
- 50
- 20
ID(on)
A
V
DS = - 5 V, VGS = - 4.5 V
VGS = - 10 V, ID = - 15 A
GS = - 10 V, ID = - 15 A, TJ = 125 °C
GS = - 4.5 V, ID = - 15 A
VDS = - 15 V, ID = - 15 A
0.010
0.015
0.018
Drain-Source On-State Resistancea
RDS(on)
V
Ω
V
Forward Transconductancea
Dynamicb
gfs
20
S
Ciss
Coss
Crss
Qg
Input Capacitance
6000
1100
700
90
VGS = 0 V, VDS = - 25 V, f = 1 MHz
VDS = - 15 V, VGS = - 10 V, ID = - 45 A
Output Capacitance
Reverse Transfer Capacitance
pF
nC
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
150
Qgs
Qgd
td(on)
tr
20
16
15
25
375
100
140
550
200
250
V
DD = - 15 V, RL = 0.33 Ω
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ - 45 A, VGEN = - 10 V, RG = 2.4 Ω
td(off)
tf
Source-Drain Diode Ratings and Characteristic TC = 25 °C
ISM
VSD
trr
Pulsed Current
Diode Forward Voltagea
100
1.5
A
V
IF = - 45 A, VGS = 0 V
1.0
55
IF = - 45 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
100
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SUD45P03-10
P-Channel 30-V (D-S), MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
80
60
40
20
0
250
200
150
100
50
V
= 10, 9, 8, 7 V
GS
6 V
5 V
T
= 125 °C
C
4 V
3 V
25 °C
- 55 °C
4
0
0
1
2
3
5
0
2
4
6
8
10
V
- Gate-to-Source Voltage (V)
V
- Drain-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
0.05
0.04
0.03
0.02
0.01
0.00
80
60
40
20
0
T
C
= - 55 °C
25 °C
125 °C
V
= 4.5 V
GS
V
= 10 V
GS
0
20
40
I - Drain Current (A)
D
60
80
100
0
10
20
30
40
50
I
D
- Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
8000
6000
4000
2000
0
20
16
12
8
V
= 15 V
= 45 A
DS
C
iss
I
D
C
oss
4
C
rss
0
0
5
10
15
20
25
30
0
30
60
90
120
V
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
DS
Capacitance
Gate Charge
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SUD45P03-10
P-Channel 30-V (D-S), MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
1.6
1.2
0.8
0.4
0.0
100
V
= 10 V
= 45 A
GS
I
D
T = 150 °C
J
T = 25 °C
J
10
1
- 50 - 25
0
25
50
75
100 125 150
0
0.3
0.6
0.9
1.2
1.5
T - Junction Temperature (°C)
J
V
- Source-to-Drain Voltage (V)
SD
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
500
100
20
16
12
8
10, 100 µs
Limited
by R
DS(on)*
1 ms
10
1
10 ms
100 ms
1 s
T
= 25 °C
A
4
Single Pulse
DC
0
0.1
0
25
50
75
100
125
150
0.1
1
10
100
T
A
- Ambient Temperature (°C)
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Maximum Drain Current
vs. Ambient Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
500
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SUD45P03-10
P-Channel 30-V (D-S), MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
MIN.
INCHES
MAX.
C1
b2
DIM.
A
MAX.
2.38
1.14
0.127
0.88
1.14
5.44
0.58
0.58
6.22
4.45
6.73
5.50
MIN.
0.087
0.035
0.001
0.028
0.030
0.206
0.018
0.018
0.235
0.161
0.255
0.177
2.21
0.89
0.030
0.71
0.76
5.23
0.46
0.46
5.97
4.10
6.48
4.49
0.094
0.045
0.005
0.035
0.045
0.214
0.023
0.023
0.245
0.175
0.265
0.217
A1
A2
b
b1
b2
C
C1
D
D1
E
b
C
b1
E1
e
e
A2
2.28 BSC
4.57 BSC
9.65
0.090 BSC
0.180 BSC
0.380
e1
A1
e1
H
10.41
1.78
1.02
1.27
1.52
0.410
0.070
0.040
0.050
0.060
L
1.40
0.64
0.89
1.15
0.055
0.025
0.035
0.040
L1
L2
L3
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
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SUD45P03-10
P-Channel 30-V (D-S), MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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SUD45P03-10
P-Channel 30-V (D-S), MOSFET
Disclaimer
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