T491X226K035AS [FREESCALE]
RF LDMOS Wideband Integrated Power Amplifiers; RF LDMOS宽带集成功率放大器
| 型号： | T491X226K035AS |
| 厂家： | 
Freescale |
| 描述： | RF LDMOS Wideband Integrated Power Amplifiers |
| 文件： | 总16页 (文件大小：594K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MW4IC001MR4
Rev. 3, 1/2005
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC001 wideband integrated circuit is designed for use as a distortion
signature device in analog predistortion systems. It uses Freescale’s newest
High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip
design makes it usable from 800 MHz to 2170 MHz. The linearity performances
cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and
W-CDMA.
MW4IC001NR4
MW4IC001MR4
800-2170 MHz, 900 mW, 28 V
W-CDMA
• Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA
Output Power — 900 mW PEP
Power Gain — 13 dB
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
Efficiency — 38%
• High Gain, High Efficiency and High Linearity
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• N Suffix Indicates Lead-Free Terminations
• In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
- 0.5, +65
- 0.5, +15
DSS
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
4.58
0.037
W
W/°C
C
D
Storage Temperature Range
Operating Junction Temperature
T
- 65 to +150
150
°C
°C
stg
T
J
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case @ 85°C
R
θ
JC
27.3
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
0 (Minimum)
M1 (Minimum)
C2 (Minimum)
Machine Model
Charge Device Model
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(V = 65 Vdc, V = 0 Vdc)
I
I
I
—
—
—
—
—
—
10
10
1
µAdc
µAdc
µAdc
DSS
DSS
GSS
DS
GS
Zero Gate Voltage Drain Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 V, I = 50 µA)
V
V
2
2
3
5
5
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 V, I = 10 mA)
3.7
DS
D
Drain-Source On-Voltage
(V = 10 V, I = 0.05 A)
V
—
—
0.48
0.05
0.9
—
GS
D
Forward Transconductance
(V = 10 V, I = 0.1 A)
g
fs
DS
D
Dynamic Characteristics
Output Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
45
—
—
pF
pF
oss
GS
Reverse Transfer Capacitance
C
0.62
rss
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two-Tone Common Source Amplifier Power Gain
G
—
—
—
—
13
29
—
—
—
—
dB
%
ps
(V = 28 Vdc, P = 0.9 W PEP, I = 12 mA,
DD
out
DQ
f = 2170 MHz, Tone Spacing = 100 kHz)
Two-Tone Drain Efficiency
η
D
(V = 28 Vdc, P = 0.9 W PEP, I = 12 mA,
DQ
DD
out
f = 2170 MHz, Tone Spacing = 100 kHz)
Third Order Intermodulation Distortion
IMD
IRL
- 28
-18
dBc
dB
(V = 28 Vdc, P = 0.9 W PEP, I = 12 mA,
DQ
DD
out
f = 2170 MHz, Tone Spacing = 100 kHz)
Input Return Loss
(V = 28 Vdc, P = 0.9 W PEP, I = 12 mA,
DQ
DD
out
f = 2170 MHz, Tone Spacing = 100 kHz)
Output Power, 1 dB Compression Point, CW
P1dB
—
12
0.85
13
—
—
—
—
W
dB
%
(V = 28 Vdc, I
= 12 mA, f = 2170 MHz)
DD
DQ
Common-Source Amplifier Power Gain
G
ps
(V = 28 Vdc, P = 0.9 W CW, I
= 12 mA, f = 2170 MHz)
= 12 mA, f = 2170 MHz)
= 12 mA, f = 2170 MHz)
DD
out
DQ
DQ
DQ
Drain Efficiency
η
D
35
38
(V = 28 Vdc, P = 0.9 W CW, I
DD
out
Input Return Loss
IRL
-10
-16
dB
(V = 28 Vdc, P = 0.9 W CW, I
DD
out
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
2
V
GG
V
DD
C1
C2
+
Z6
R1
C7
C6
C8
Z7
RF
OUTPUT
RF
INPUT
Z8
Z9
Z10
Z11
Z12
Z13
C13
DUT
Z1
Z2
Z3 Z4
Z5
R2
L2
C5
C11
C12
L1
C3
C9
C10
C4
Z1
Z2
Z3
Z4
Z5
1.331″ x 0.044″ Microstrip
0.126″ x 0.076″ Microstrip
0.065″ x 0.175″ Microstrip
0.065″ x 0.195″ Microstrip
0.680″ x 0.145″ Microstrip
1.915″ x 0.055″ Microstrip
0.120″ x 0.141″ Microstrip
Z9
0.062″ x 0.044″ to 0.615″ Taper
0.082″ x 0.615″ Microstrip
0.075″ x 0.044″ Microstrip
0.625″ x 0.044″ Microstrip
1.375″ x 0.044″ Microstrip
Z10
Z11
Z12
Z13
Z6, Z7
Z8
PCB
Rogers RO4350, 0.020″, ε = 3.5
r
Figure 1. MW4IC001NR4(MR4) 900 MHz Test Circuit Schematic
Table 6. MW4IC001NR4(MR4) 900 MHz Test Circuit Component Designations and Values
Part
Description
0.1 µF, 100 V Chip Capacitors
43 pF, 500 V Chip Capacitors
12 pF, 500 V Chip Capacitor
22 µF, 35 V Tantalum Chip Capacitor
4.7 pF, 500 V Chip Capacitor
0.6-4.5 pF, 500 V Variable Capacitors
2.7 pF, 500 V Chip Capacitor
3.3 pF, 500 V Chip Capacitor
5.6 nH Chip Inductor
Part Number
C1210C104K5RACTR
100B430JP500X
100B120JP500X
T491X226K035AS
100B4R7CP500X
27271SL
Manufacturer
Kemet
C1, C6
C2, C3, C5, C7
ATC
C4
ATC
C8
Kemet
ATC
C9
C10, C11
C12
C13
L1
Johanson
ATC
100B2R7CP500X
100B3R3CP500X
0805 Series
ATC
AVX
L2
10 nH Chip Inductor
1008 Series
ATC
R1
100 W Chip Resistor
CRCW12061001F100
CRCW120620R0F100
Dale
Dale
R2
20 W Chip Resistor
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
3
V
V
GG
DD
C8
C1
C2
C6
C7
R1
C4
C12
C9 C3
C10
C5
L2
C11
C13
L1
R2
MW4IC001MR4
900 MHz
Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MW4IC001NR4(MR4) 900 MHz Test Circuit Component Layout
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS - 900 MHz
50
−15
−17
−19
−21
−23
−25
−27
−29
−31
−33
−35
IRL
46
42
η
D
38
34
V
P
I
= 28 Vdc
= 0.9 W (PEP)
= 14 mA
DS
out
30
26
DQ
Two−Tone Measurement
100 kHz Tone Spacing
22
IM3
18
14
G
ps
10
855 860 865 870 875 880 885 890 895 900 905
f1, FREQUENCY (MHz)
Figure 3. Two-Tone Performance versus
Frequency
15
14
13
60
55
50
−25
G
η
D
ps
V
= 28 Vdc
f1 = 880 MHz
DS
−30
−35
I
= 8 mA
f2 = 880.1 MHz
DQ
12
11
45
40
P1dB
10 mA
18 mA
−40
−45
10
9
35
30
16 mA
14 mA
8
7
V
= 28 Vdc
= 14 mA
25
20
DS
−50
−55
I
DQ
f = 880 MHz
Two−Tone Measurement
100 kHz Tone Spacing
12 mA
6
15
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
P , OUTPUT POWER (WATTS) PEP
out
1
10
P
, OUTPUT POWER (WATTS)
out
Figure 4. CW Performance versus Output
Power
Figure 5. Intermodulation Distortion versus
Output Power
−25
−30
−35
−25
V
= 28 Vdc
DS
= 14 mA
f1 = 880 MHz
I
DQ
−30
−35
−40
f2 = 880.1 MHz
−40
−45
3rd Order
−50
−55
V
= 28 Vdc
DS
= 14 mA
f1 = 880 MHz,
10 MHz
I
DQ
5th Order
7th Order
−60
−65
−45
−50
1 MHz
Tone
Spacing = 100 kHz
Two−Tone Measurement
100 kHz Tone Spacing
f2 = f1 + Tone Spacing
Two−Tone Measurement
−70
0.01
0.1
1
10
0.01
0.1
1
10
P
, OUTPUT POWER (WATTS) PEP
out
P
, OUTPUT POWER (WATTS) PEP
out
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Third Order Intermodulation
Distortion versus Output Power
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
5
Z5
V
GG
Z12
+
V
DD
C1
C2
+
Z4
R1
C4
C6
Z11
RF
OUTPUT
RF
INPUT
Z8
Z9
Z13
Z14
Z15
Z10
DUT
Z1
Z2
Z3
Z6
Z7
C5
C3
C7
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
1.018″ x 0.044″ Microstrip
0.495″ x 0.296″ Microstrip
0.893″ x 0.500″ Microstrip
1.340″ x 0.022″ Microstrip
0.912″ x 0.022″ Microstrip
0.241″ x 0.500″ Microstrip
0.076″ x 0.150″ Microstrip
0.294″ x 0.150″ Microstrip
Z9
0.067″ x 0.264″ Microstrip
0.457″ x 0.492″ Microstrip
0.719″ x 0.022″ Microstrip
1.149″ x 0.022″ Microstrip
0.677″ x 0.434″ Microstrip
0.095″ x 0.264″ Microstrip
0.772″ x 0.044″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
PCB
Rogers RO4350, 0.020″, ε = 3.5
r
Figure 8. MW4IC001NR4(MR4) 1990 MHz Test Circuit Schematic
Table 7. MW4IC001NR4(MR4) 1990 MHz Test Circuit Component Designations and Values
Part
Description
22 µF, 35 V Tantalum Capacitors
10 pF, 500 V Chip Capacitors
10 pF, 500 V Chip Capacitor
0.6-4.5 pF, 500 V Variable Capacitor
1 kW Chip Resistor
Part Number
T491X226K035AS
100B100JCA500X
600S100JW
Manufacturer
C1, C6
C2, C4
C3, C5
C7
Kemet
ATC
ATC
27271SL
Johanson
Dale
R1
CRCW12061021F100
V
V
DD
GG
C1
C6
C2
C4
R1
C3
C5
C7
MW4IC001MR4
1990 MHz
Rev 3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 9. MW4IC001NR4(MR4) 1990 MHz Test Circuit Component Layout
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS - 1990 MHz
40
35
−11
IRL
−14
−17
η
D
30
25
20
15
−20
V
= 28 Vdc, P = 0.9 W (PEP), I = 12 mA
out DQ
Two−Tone Measurement, 100 kHz Tone Spacing
DD
−23
−26
G
ps
10
5
−29
−32
IMD
0
−35
1930
1940
1950
1960
1970
1980
1990
f1, FREQUENCY (MHz)
Figure 10. Two-Tone Performance versus
Frequency
14.4
56
−30
G
ps
I
= 20 mA
DQ
−35
−40
14.0
13.6
48
40
32
24
16
−45
−50
16 mA
= 28 Vdc
13.2
P1dB
V
DD
V
= 28 Vdc
= 12 mA
DD
f1 = 1990 MHz, f2 = 1990.1 MHz
Two−Tone Measurement
100 kHz Tone Spacing
12.8
12.4
I
DQ
f = 1990 MHz
−55
−60
η
D
9.6 mA
0.01
12 mA
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
0.1
P , OUTPUT POWER (WATTS) PEP
out
1
P
, OUTPUT POWER (WATTS)
out
Figure 11. CW Performance versus Output
Power
Figure 12. Intermodulation Distortion versus
Output Power
−30
−35
−40
−30
−35
−40
3rd Order
−45
−50
−55
10 MHz
5th Order
−45
−50
−60
−65
1 MHz
V
= 28 Vdc
DD
= 12 mA
I
DQ
V
I
= 28 Vdc
= 12 mA, f1 = 1990 MHz, f2 = 1990.1 MHz
f1 = 1990 MHz
f2 = f1 + Tone Spacing
Two−Tone Measurement
7th Order
DD
−55
−60
−70
−75
DQ
100 kHz
Two−Tone Measurement, 100 kHz Tone Spacing
0.01
0.1
1
0.01
0.1
P , OUTPUT POWER (WATTS) PEP
out
1
OUTPUT POWER (WATTS) PEP
Figure 13. Intermodulation Distortion
Products versus Output Power
Figure 14. Third Order Intermodulation
Distortion versus Output Power
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
7
Z5
V
GG
Z12
+
V
DD
C1
C2
+
Z4
R1
C4
C6
Z11
RF
OUTPUT
RF
INPUT
Z8
Z9
Z13
Z14
Z15
Z10
DUT
Z1
Z2
Z3
Z6
Z7
C5
C3
C7
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
1.267″ x 0.044″ Microstrip
0.058″ x 0.044″ Microstrip
0.758″ x 0.256″ Microstrip
1.073″ x 0.022″ Microstrip
1.361″ x 0.022″ Microstrip
0.205″ x 0.332″ Microstrip
0.109″ x 0.150″ Microstrip
0.210″ x 0.150″ Microstrip
Z9
0.106″ x 0.344″ Microstrip
0.783″ x 0.500″ Microstrip
0.847″ x 0.022″ Microstrip
1.055″ x 0.022″ Microstrip
0.291″ x 0.387″ Microstrip
0.050″ x 0.287″ Microstrip
0.950″ x 0.044″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
PCB
Rogers RO4350, 0.020″, ε = 3.5
r
Figure 15. MW4IC001NR4(MR4) 2170 MHz Test Circuit Schematic
Table 8. MW4IC001NR4(MR4) 2170 MHz Test Circuit Component Designations and Values
Part
Description
22 µF, 35 V Tantalum Capacitors
10 pF, 500 V Chip Capacitors
10 pF, 500 V Chip Capacitor
0.6-4.5 pF, 500 V Variable Capacitor
1 kW Chip Resistor
Part Number
T491X226K035AS
100B100JCA500X
600S100JW
Manufacturer
Kemet
C1, C6
C2, C4
C3, C5
C7
ATC
ATC
27271SL
Johanson
Dale
R1
CRCW12061021F100
V
V
DD
GG
C1
C6
C4
C2
R1
C5
C3
C7
MW4IC001MR4
2170 MHz
Rev 3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 16. MW4IC001NR4(MR4) 2170 MHz Test Circuit Component Layout
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
8
TYPICAL CHARACTERISTICS - 2170 MHz
32
27
22
−13
−18
−23
IRL
η
D
V
P
= 28 Vdc
= 0.9 W (PEP)
DD
out
I
= 12 mA
DQ
Two−Tone Measurement,
100 kHz Tone Spacing
IMD
17
12
−28
−33
G
ps
2110
2120
2130
2140
2150
2160
2170
f, FREQUENCY (MHz)
Figure 17. Two-Tone Performance versus
Frequency
13.8
60
−20
V
= 28 Vdc
DD
f1 = 2170 MHz, f2 = 2170.1 MHz
Two−Tone Measurement
100 kHz Tone Spacing
G
50
40
13.4
13.0
ps
−25
−30
7.2 mA
20 mA
30
20
10
0
−35
−40
12.6
12.2
η
D
16 mA
P1dB
V
= 28 Vdc
= 12mA
DD
11.8
11.4
−45
−50
I
DQ
f = 2170 MHz
9.6 mA
12 mA
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0.01
0.1
P , OUTPUT POWER (WATTS) PEP
out
1
P
, OUTPUT POWER (WATTS) PEP
out
Figure 18. CW Performance versus Output
Power
Figure 19. Intermodulation Distortion versus
Output Power
−20
−25
−30
−35
−20
V
I
= 28 Vdc
= 12 mA
V
= 28 Vdc, I = 12 mA,
DQ
f1 = 2170 MHz, f2 = 2170.1 MHz
DD
DD
−25
−30
DQ
f1 = 2170 MHz
f2 = f1 + Tone Spacing
Two−Tone Measurement
Two−Tone Measurement, 100 kHz Tone Spacing
−35
−40
−45
−50
3rd Order
1 MHz
10 MHz
5th Order
7th Order
−55
−60
−40
−45
−65
−70
100 kHz
0.01
0.1
1
0.01
0.1
, OUTPUT POWER (WATTS) PEP
1
P
, OUTPUT POWER (WATTS) PEP
out
P
out
Figure 21. Third Order Intermodulation
Distortion versus Output Power
Figure 20. Intermodulation Distortion
Products versus Output Power
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
9
f = 860 MHz
Z
f = 900 MHz
load
Z = 50 Ω
o
Z
source
f = 900 MHz
f =860 MHz
V
= 28 V, I = 14 mA, P = 0.9 W PEP
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
860
865
870
27.853 + j5.908
28.617 + j6.078
29.458 + j6.285
15.492 + j63.669
15.592 + j68.687
15.788 + j69.799
875
880
30.306 + j6.422
31.223 + j6.567
32.194 + j6.660
33.228 + j6.656
34.293 + j6.624
35.424 + j6.508
15.835 + j70.863
15.975 + j71.920
16.094 + j73.091
16.286 + j74.159
16.344 + j75.236
16.628 + j76.283
885
890
895
900
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
load
Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
Z
source
load
Figure 22. Series Equivalent Source and Load Impedance
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
10
f = 2180 MHz
Z
load
f = 1920 MHz
f = 2000 MHz
f = 2100 MHz
f = 2000 MHz
Z
load
f = 2180 MHz
f = 2100 MHz
Z
source
f = 1920 MHz
Z
source
Z = 50 Ω
o
Z = 50 Ω
o
V
= 28 V, I = 12 mA, P = 0.9 W PEP
DQ out
V
= 28 V, I = 12 mA, P = 0.9 W PEP
DQ out
DD
DD
f
Z
Z
load
Ω
f
Z
Z
load
Ω
source
Ω
source
Ω
MHz
MHz
2100
2110
2120
2.667 + j12.903
2.671 + j13.070
2.664 + j13.224
5.892 + j26.374
6.092 + j26.739
6.281 + j27.094
1920
1930
1940
4.238 + j15.142
4.322 + j15.362
4.490 + j15.466
7.764 + j28.829
8.056 + j29.352
8.436 + j29.727
2130
2140
2.694 + j13.431
2.703 + j13.511
2.702 + j13.700
2.745 + j13.952
2.754 + j14.026
2.784 + j14.206
6.540 + j27.510
6.748 + j27.795
6.996 + j28.182
7.300 + j28.678
7.562 + j28.987
7.862 + j29.411
1950
1960
4.605 + j15.711
4.752 + j15.904
4.905 + j16.050
5.071 + j16.236
5.262 + j16.446
5.487 + j16.632
8.809 + j30.249
9.183 + j30.763
9.598 + j31.213
10.030 + j31.690
10.546 + j32.237
11.054 + j32.726
2150
2160
1970
1980
2170
2180
1990
2000
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
load
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
load
=
Test circuit impedance as measured
from drain to ground.
=
Test circuit impedance as measured
from drain to ground.
Output
Device
Output
Device
Input
Matching
Network
Input
Matching
Network
Matching
Network
Matching
Network
Under Test
Under Test
Z
Z
Z
Z
source
load
source
load
Figure 23. Series Equivalent Source and Load Impedance
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
11
NOTES
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
12
NOTES
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
13
NOTES
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
14
PACKAGE DIMENSIONS
A
F
3
1
2
R
D
L
B
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
4
N
K
INCHES
MIN
MILLIMETERS
_
"
0.35 (0.89) X 45
_
DIM
A
B
C
D
E
MAX
0.265
0.235
0.072
0.150
0.026
0.044
0.070
0.063
0.180
0.285
0.255
0.240
0.008
0.063
0.210
0.012
0.012
0.021
0.010
0.010
MIN
6.48
5.72
1.65
3.30
0.53
0.66
1.27
1.14
4.06
6.93
6.22
5.84
0.00
1.40
5.08
0.15
0.15
0.00
0.00
0.00
MAX
6.73
5.97
1.83
3.81
0.66
1.12
1.78
1.60
4.57
7.24
6.48
6.10
0.20
1.60
5.33
0.31
0.31
0.53
0.25
0.25
5
0.255
0.225
0.065
0.130
0.021
0.026
0.050
0.045
0.160
0.273
0.245
0.230
0.000
0.055
0.200
0.006
0.006
10 DRAFT
_
Q
U
H
ZONE V
ZONE W
P
F
4
G
H
J
C
E
Y
Y
K
L
2
1
N
P
Q
R
S
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. SOURCE
U
3
ZONE V 0.000
ZONE W 0.000
ZONE X 0.000
S
G
ZONE X
CASE 466-03
ISSUE C
VIEW Y-Y
PLD-1.5
PLASTIC
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
15
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Document Number:
Rev. 3, 1/2005
MW4IC001MR4
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