TJ15P04M3 [FREESCALE]
MOSFETs Silicon P-Channel MOS (U-MOSî±-H); MOSFET的硅P沟道MOS （U - MOSI ?? ± -H ）
| 型号： | TJ15P04M3 |
| 厂家： | 
Freescale |
| 描述： | MOSFETs Silicon P-Channel MOS (U-MOSî±-H) |
| 文件： | 总8页 (文件大小：310K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TJ15P04M3
MOSFETs Silicon P-Channel MOS (U-MOS-H)
1. Applications
•
DC-DC Converters
•
Desktop Computers
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = -10 V)
(2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(3) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (heatsink)
3: Source
DPAK
4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified)
a
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
VDSS
VGSS
ID
-40
±20
(Note 1)
(Note 1)
-15
A
IDP
-45
(Tc = 25)
PD
29
W
mJ
A
Single-pulse avalanche energy
Avalanche current
(Note 2)
EAS
IAR
29
-15
Channel temperature
Storage temperature
Tch
Tstg
150
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Rth(ch-c)
Rth(ch-a)
4.3
/W
125
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = -32 V, Tch = 25 (initial), L = 100 µH, RG = 25 Ω, IAR = -15 A
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
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6. Electrical Characteristics
6.1. Static Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
IDSS
VGS = ±20 V, VDS = 0 V
±0.1
µA
Drain cut-off current
VDS = -40 V, VGS = 0 V
-10
Drain-source breakdown voltage
Drain-source breakdown voltage (Note 3)
Gate threshold voltage
V(BR)DSS ID = -10 mA, VGS = 0 V
V(BR)DSX ID = -10 mA, VGS = 10 V
-40
-30
-0.8
37
V
Vth
VDS = -10 V, ID = -0.1 mA
-2.0
48
Drain-source on-resistance
RDS(ON) VGS = -4.5 V, ID = -7.5 A
VGS = -10 V, ID = -7.5 A
mΩ
28
36
Note 3: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Input capacitance
Symbol
Test Condition
Min
Typ.
Max
Unit
pF
Ciss
Crss
Coss
tr
VDS = -10 V, VGS = 0 V, f = 1 MHz
1100
130
170
11
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
See Figure 6.2.1.
ns
ton
19
tf
42
toff
170
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Symbol
Qg
Test Condition
Min
Typ.
26
Max
Unit
nC
Total gate charge (gate-source plus
gate-drain)
VDD ≈ -32 V, VGS = -10 V, ID = -15 A
Gate-source charge 1
Gate-drain charge
Qgs1
Qgd
6.7
2.5
6.4. Source-Drain Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse drain current (pulsed)
Diode forward voltage
(Note 4)
IDRP
-45
1.2
A
V
VDSF
IDR = -15 A, VGS = 0 V
Note 4: Ensure that the channel temperature does not exceed 150.
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7. Marking
Fig. 7.1 Marking
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8. Characteristics Curves (Note)
Fig. 8.1 I - V
Fig. 8.2 I - V
D DS
D
DS
Fig. 8.3 I - V
Fig. 8.4
V - V
DS GS
D
GS
Fig. 8.5
R
DS(ON)
- I
D
Fig. 8.6
R - T
DS(ON) a
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Fig. 8.7
I
- V
Fig. 8.8 Capacitance - V
DS
DR
DS
Fig. 8.9
V
th
- T
Fig. 8.10 Dynamic Input/Output Characteristics
a
Fig. 8.11 P - T
D
c
(Guaranteed Maximum)
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Fig. 8.12 r /R
- t
w
th th(ch-c)
(Guaranteed Maximum)
Fig. 8.13 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.14
E
- T
AS ch
(Guaranteed Maximum)
Fig. 8.15 Test Circuit/Waveform
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Package Dimensions
Unit: mm
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