TK20P04M1 [FREESCALE]
MOSFETs Silicon N-Channel MOS (U-MOSî±-H); MOSFET的硅N沟道MOS （U - MOSI ?? ± -H ）
| 型号： | TK20P04M1 |
| 厂家： | 
Freescale |
| 描述： | MOSFETs Silicon N-Channel MOS (U-MOSî±-H) |
| 文件： | 总8页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TK20P04M1
MOSFETs Silicon N-Channel MOS (U-MOS-H)
1. Applications
•
DC-DC Converters
•
Switching Voltage Regulators
2. Features
(1) High-speed switching
(2) Low gate charge: QSW = 3.7 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 10 V)
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (heatsink)
3: Source
DPAK
4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified)
a
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
VDSS
VGSS
ID
40
±20
(Note 1)
(Note 1)
20
A
IDP
60
(Tc = 25)
PD
27
W
mJ
A
Single-pulse avalanche energy
Avalanche current
(Note 2)
EAS
IAR
10.4
20
Channel temperature
Storage temperature
Tch
Tstg
150
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Rth(ch-c)
Rth(ch-a)
4.62
125
/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 32 V, Tch = 25 (initial), L = 20 µH, RG = 1.2 Ω, IAR = 20 A
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
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6. Electrical Characteristics
6.1. Static Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
IDSS
VGS = ±20 V, VDS = 0 V
23
19
±0.1
10
µA
Drain cut-off current
VDS = 40 V, VGS = 0 V
Drain-source breakdown voltage
V(BR)DSS ID = 10 mA, VGS = 0 V
V(BR)DSX ID = 10 mA, VGS = -20 V
40
25
1.3
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 0.1 mA
2.3
34
Drain-source on-resistance
RDS(ON) VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 10 A
mΩ
29
6.2. Dynamic Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Input capacitance
Symbol
Test Condition
Min
Typ.
Max
Unit
pF
Ciss
Crss
Coss
rg
VDS = 10 V, VGS = 0 V, f = 1 MHz
985
37
5.1
Reverse transfer capacitance
Output capacitance
159
3.4
2.7
8.1
5.1
22
Gate resistance
VDS = 10 V, VGS = 0 V, f = 5 MHz
See Figure 6.2.1.
Ω
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
tr
ns
ton
tf
toff
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Symbol
Qg
Test Condition
Min
Typ.
Max
Unit
nC
Total gate charge (gate-source plus
gate-drain)
VDD ≈ 32 V, VGS = 10 V, ID = 20 A
VDD ≈ 32 V, VGS = 5 V, ID = 20 A
VDD ≈ 32 V, VGS = 10 V, ID = 20 A
15
7.6
4.1
1.7
3.7
Gate-source charge 1
Gate-drain charge
Gate switch charge
Qgs1
Qgd
QSW
6.4. Source-Drain Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse drain current (pulsed)
Diode forward voltage
(Note 3)
IDRP
60
A
V
VDSF
IDR = 20 A, VGS = 0 V
-1.2
Note 3: Ensure that the channel temperature does not exceed 150.
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7. Marking
Fig. 7.1 Marking
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8. Characteristics Curves (Note)
Fig. 8.1 I - V
Fig. 8.2 I - V
D DS
D
DS
Fig. 8.3 I - V
Fig. 8.4
V - V
DS GS
D
GS
Fig. 8.5
R
DS(ON)
- I
D
Fig. 8.6
R - T
DS(ON) a
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Fig. 8.7
I
- V
Fig. 8.8 Capacitance - V
DS
DR
DS
Fig. 8.9 V - T
Fig. 8.10 Dynamic Input/Output Characteristics
th
a
Fig. 8.11 P - T
D
c
(Guaranteed Maximum)
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Fig. 8.12 r /R
- t
w
th th(ch-c)
(Guaranteed Maximum)
Fig. 8.13 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.14
E
- T
AS ch
(Guaranteed Maximum)
Fig. 8.15 Test Circuit/Waveform
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Package Dimensions
Unit: mm
Weight: 0.36 g (typ.)
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