TK8P25DA [FREESCALE]
MOSFETs Silicon N-Channel MOS (Ï-MOSî²); MOSFET的硅N沟道MOS （I ?? - ?? MOSI ²）
| 型号： | TK8P25DA |
| 厂家： | 
Freescale |
| 描述： | MOSFETs Silicon N-Channel MOS (Ï-MOSî²) |
| 文件： | 总8页 (文件大小：335K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TK8P25DA
MOSFETs Silicon N-Channel MOS (π-MOS)
1. Applications
•
Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V)
(3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate (G)
2: Drain (D)
3: Source (S)
DPAK
4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified)
a
Characteristics
Symbol
VDSS
Rating
250
Unit
V
Drain-source voltage
Gate-source voltage
VGSS
±20
Drain current (DC)
Drain current (pulsed)
Power dissipation
(Note 1)
(Note 1)
ID
IDP
PD
7.5
30
A
(Tc = 25)
55
W
mJ
A
Single-pulse avalanche energy
Avalanche current
(Note 2)
(Note 3)
(Note 1)
(Note 1)
EAS
IAR
IDR
IDRP
Tch
45
7.5
7.5
30
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
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5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Rth(ch-c)
Rth(ch-a)
2.27
125
/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 50 V, Tch = 25 (initial), L = 1.33 mH, RG = 25 Ω, IAR = 7.5 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
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6. Electrical Characteristics
6.1. Static Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
IDSS
VGS = ±20 V, VDS = 0 V
±1
10
µA
Drain cut-off current
VDS = 250 V, VGS = 0 V
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS ID = 10 mA, VGS = 0 V
Vth VDS = 10 V, ID = 1 mA
RDS(ON) VGS = 10 V, ID = 3.8 A
250
1.5
V
3.5
0.5
Drain-source on-resistance
0.41
Ω
6.2. Dynamic Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Input capacitance
Symbol
Test Condition
Min
Typ.
Max
Unit
pF
Ciss
Crss
Coss
rg
VDS = 100 V, VGS = 0 V, f = 1 MHz
550
5.1
40
Reverse transfer capacitance
Output capacitance
Gate resistance
VDS = OPEN, f = 1 MHz
See Figure 6.2.1.
5.8
28
Ω
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
tr
ns
ton
tf
32
16
toff
66
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Symbol
Qg
Test Condition
Min
Typ.
16
Max
Unit
nC
Total gate charge (gate-source plus
gate-drain)
VDD ≈ 200 V, VGS = 10 V, ID = 7.5 A
Gate-source charge 1
Gate-drain charge
Qgs1
Qgd
3.3
5.3
6.4. Source-Drain Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Diode forward voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
VDSF
trr
IDR = 7.5 A, VGS = 0 V
-1.7
V
Reverse recovery time
IDR = 7.5 A, VGS = 0 V
150
ns
-dIDR/dt = 100 A/µs
Reverse recovery charge
Qrr
Irr
0.8
11
µC
Peak reverse recovery current
A
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7. Marking
Fig. 7.1 Marking
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8. Characteristics Curves (Note)
Fig. 8.1 I - V
Fig. 8.2 I - V
D DS
D
DS
Fig. 8.3 I - V
Fig. 8.4
V - V
DS GS
D
GS
Fig. 8.5 |Y | - I
Fig. 8.6
R
- I
fs
D
DS(ON) D
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Fig. 8.7
R
DS(ON)
- T
Fig. 8.8
I - V
DR DS
a
Fig. 8.9 C - V
Fig. 8.10 V - T
th a
DS
Fig. 8.11 P - T
D
c
Fig. 8.12 Dynamic Input/Output Characteristics
(Guaranteed Maximum)
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Fig. 8.13 r /R
- t
w
th th(ch-c)
(Guaranteed Maximum)
Fig. 8.14 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.15
E
- T
AS ch
(Guaranteed Maximum)
Fig. 8.16 Test Circuit/Waveform
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Package Dimensions
Unit: mm
Weight: 0.36 g (typ.)
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