BAS70 [FRONTIER]
SURFACE MOUNT SCHOTTKY BARRIER DIODE; 表面贴装肖特基二极管
| 型号： | BAS70 |
| 厂家： | 
Frontier Electronics |
| 描述： | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 文件： | 总2页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: (805) 522-9998 FAX: (805) 522-9989
E-mail: frontiersales@frontierusa.com
Web: http://www.frontierusa.com
SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS70 / 04 / 05 / 06
A
SOT-23
FEATURES
z LOW TURN-ON VOLTAGE
z FAST SWITCHING
z PN JUNCTION GUARD RING FOR TRANSIENT AND
ESD PROTECTION
3
DIM
A
B
C
D
E
G
H
J
K
L
Min
0.30
1.20
2.10
0.85
0.45
1.70
2.70
0.00
0.89
0.30
0.076
Max
0.51
1.60
3.00
1.05
1.00
2.10
3.10
0.13
1.30
0.61
0.25
B
C
TOP VIEW
1
D
H
2
MECHANICAL DATA
G
E
z CASE: SOT-23, PLASTIC
z TERMINALS: SOLDERABLE PER MIL-STD-202,
METHOD 208
z WEIGHT: 0.008 GRAM
z POLARITY: SEE DIAGRAM
M
K
M
All Dimensions in mm
J
L
TOP VIEW
TOP VIEW
TOP VIEW
TOP VIEW
BAS70
BAS70-04
BAS70-05
BAS70-06
RATINGS
SYMBOL
VALUE
70
UNITS
V
PEAK REPETITIVE REVERSE VOLTAGE
WORKING PEAK REVERSE VOLTAGE
DC BLOCKING VOLTAGE
VRRM
VRWM
VR
FORWARD CONTINUOUS CURRENT ( NOTE 1 )
IF
100
300
600
mA
mA
mA
REPETITIVE PEAK FORWARD CURRENT ( NOTE 1 )
IFRM
IFSM
FORWARD SURGE CURRENT
@ tp < 1.0s ( NOTE1 )
POWER DISSIPATION（NOTE 1）
Pd
200
mW
THERMAL RESISTANCE. JUNCTION TO AMBIENT AIR
OPERATING AND STORAGE TEMPERATURE RANGE
RθJA
500
K / W
TJ, TSTG
-65 TO +125
℃
ELECTRICAL CHARACTERISTICS @ TA=25℃ UNLESS OTHERWISE SPECIFIED
CHARACTERISTICS
REVERSE BREAKDOWN VOLTAGE
SYMBOL
V(BR)R
Min.
Max.
-
Unit
V
Test Condition
IRS = 100μ A
70
Tp < 300μ s,duty cycle < 2%
@IF = 1 mA
@IF = 15 mA
FORWARD VOLTAGE
VF
410
1000
mV
-
tp < 300μ s,duty cycle < 2%
@VR = 50V
REVERSE LEAKAGE CURRENT
IR
CJ
100
2
nA
-
-
pF
VR=1.0 , f=1.0MHZ
JUNCTION CAPACITANCE
NOTE: 1. DIODE ON FIBERGLASS SUBSTRATE
BAS70 / 04 / 05 / 06
Page: 1
RATINGS AND CHARACTERISTIC CURVE BAS70 / 04 / 05 / 06
FIG 1.
FIG 2.
Reverse current as a function of
reverse voltage; typical values.
Forward current as a function of
forward voltage; typical values.
10３
10３
IR
IF
( mA )
c
e
d
( μ A )
c
d
10 2
10
1
10 2
10
1
c
d
e
e
-1
10
10
0
10
20
VR ( V )
30
0
0.4
0.8
VF ( V )
1.2
cTemp=125℃ dTemp=85℃ eTemp=25℃
cTemp=125℃ dTemp=85℃ eTemp=25℃
FIG 3.
FIG 4.
Diode capacitance as a function of
Reverse recovery definitions.
reverse Voltage; typical values.
IF
15
Cd
( pF )
dlF
dt
10
5
10 %
Qr
90 %
IR
tf
0
0
10
20
30
VR ( V )
f = 1 MHZ ; Temp=25℃
BAS70 / 04 / 05 / 06
Page: 2
相关型号：
BAS70-
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)
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