BAV21 [FRONTIER]
SILICON EPITAXIAL PLANAR DIODE; 硅外延平面二极管
| 型号： | BAV21 |
| 厂家： | 
Frontier Electronics |
| 描述： | SILICON EPITAXIAL PLANAR DIODE |
| 文件： | 总2页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: (805) 522-9998 FAX: (805) 522-9989
E-mail: frontiersales@frontierusa.com
Web: http: //www.frontierusa.com
SILICON EPITAXIAL PLANAR DIODE
BAV21
FEATURES
z FAST SWITCHING
z SMALL SIZE
0.52∅
1.9 ∅
3.9
MECHANICAL DATA
z CASE: GLASS, DO35, DIMENSIONS IN MILLIMETERS
z LEADS: SOLDERABLE PER MIL-STD-202, METHOD 208
z POLARITY: CATHODE INDICATED BY COLOR BAND
z WEIGHT: 0.13 GRAMS
27.5
MIN
RATINGS
SYMBOL
VR
BAV21
250
UNITS
V
REVERSE VOLTAGE
RECTIFIED CURRENT（AVERAGE）
HALF WAVE RECTIFICATION WITH RESIST LOAD
AT Tamb＝25°C AND ≧ 50HZ （NOTE 1）
IO
200
mA
SURGE FORWARD CURRENT AT T＜1 s AND TJ＝25°C
POWER DISSIPATION AT Tamb=25°C（NOTE 1）
JUNCTION TEMPERATURE
IFSM
PTOT
TJ
1
400
A
mW
°C
175
STORAGE TEMPERATURE RANGE
TS
- 55 TO + 175
°C
ELECTRICAL CHARACTERISTICS (AT TA =25°C UNLESS OTHERWISE NOTED)
CHARACTERISTICS
FORWARD VOLTAGE AT IF=100mA
SYMBOL
VF
MAX
1
UNITS
V
LEAKAGE CURRENT
AT VR=200V
IR
IR
100
15
nA
μA
AT VR=200V TJ=100°C
CAPACITANCE AT VF=VR=0
CTOT
TRR
1.5
50
PF
nS
REVERSE RECOVERY TIME
FROM IF=30mA THROUGH IR=30mA TO IR=3mA ; RL=100Ω
THERMAL RESISTANCE
RTHA
0.375
K / mW
JUNCTION TO AMBIENT AIR（NOTE 1）
NOTE: 1. LEADS KEPT AT AMBIENT TEMP. AT 8mm LENGTH
BAV21
Page: 1
RATINGS AND CHARACTERISTIC CURVE BAV21
FIG. 2-LEAKAGE CURRENT VERSUS
JUNCTION TEMPERATURE
FIG. 1-FORWARD CHARACTERISTIC
mA
100
10
1000
( μ A )
100
IF
I
R
10
1
Tj=25oC
1.0
0.1
0.1
0.01
0.01
200oC
0
1.0
2.0
0
100
Tj
V
F
BAV21
Page: 2
相关型号：
BAV21-AP
Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2
MCC
©2020 ICPDF网 联系我们和版权申明