BC817S [FS]

General Purpose Transistors;
BC817S
型号: BC817S
厂家: First Silicon Co., Ltd    First Silicon Co., Ltd
描述:

General Purpose Transistors

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中文:  中文翻译
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SEMICONDUCTOR  
BC817S  
TECHNICAL DATA  
GeneralPurposeTransistors  
MAXIMUM RATINGS  
Rating  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
Value  
45  
Unit  
V
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
50  
V
3
5.0  
V
2
500  
mAdc  
1
SOT–23  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
P D  
3
225  
1.8  
mW  
mW/°C  
°C/W  
COLLECTOR  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R θJA  
P D  
556  
1
BASE  
Alumina Substrate, (2) TA = 25°C  
Derate above 25°C  
300  
2.4  
mW  
mW/°C  
°C/W  
°C  
2
EMITTER  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R θJA  
417  
T J , T stg  
–55 to +150  
DEVICE MARKING  
BC817S–A = 6A , BC817S-B = H6B , BC817S-C = 6C  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(IC = –10 mA)  
V (BR)CEO  
45  
50  
V
V
V
Collector–Emitter Breakdown Voltage  
(VEB = 0, IC = –10 µA)  
V (BR)CES  
Emitter–Base Breakdown Voltage  
(I E = –1.0 µA)  
V (BR)EBO  
ICBO  
5.0  
Collector Cutoff Current  
(VCB = 20 V)  
100  
5.0  
nA  
(VCB = 20 V, TA = 150°C)  
µA  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
2008. 01. 18  
Revision No : 0  
1/3  
BC817S  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
ON CHARACTERISTICS  
DC Current Gain  
h FE  
(I C= 100 mA, V CE = 1.0 V)  
BC817–A  
BC817–B  
BC817–C  
100  
250  
160  
250  
40  
400  
600  
(I C = 500 mA, V CE = 1.0 V)  
Collector–Emitter Saturation Voltage  
(I C = 500 mA, I B = 50 mA)  
V CE(sat)  
0.7  
V
V
Base–Emitter On Voltage  
( I C = 500 mA, V CE = 1.0 V)  
V BE(on)  
1.2  
SMALL–SIGNAL CHARACTERISTICS  
Current–Gain — Bandwidth Product  
f T  
100  
MHz  
pF  
( I C = 10 mA, V CE = 5.0 V dc, f = 100 MHz)  
Output Capacitance  
C obo  
10  
(V CB = 10 V, f = 1.0 MHz)  
ORDERING INFORMATION  
Device  
Marking  
6A  
Shipping  
BC817-ALT1G  
BC817-ALT3G  
BC817-BLT1G  
BC817-BLT3G  
BC817-CLT1G  
BC817-CLT3G  
3000/Tape&Reel  
10000/Tape&Reel  
3000/Tape&Reel  
10000/Tape&Reel  
3000/Tape&Reel  
10000/Tape&Reel  
6A  
6B  
6B  
6C  
6C  
2008. 01. 18  
Revision No : 0  
2/3  
BC817S  
SOT-23  
NOTES:  
A
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
L
2. CONTROLLING DIMENSION: INCH.  
3
S
B
1
2
V
G
C
H
J
D
K
P N 1. BASE  
2. EMITTER  
3. COLLECTOR  
0.037  
0.95  
0.037  
0 95  
0.079  
2.0  
0.035  
0.9  
0 031  
0.8  
inches  
mm  
2008. 01. 18  
Revision No : 0  
3/3  

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