BC846S [FS]
General Purpose Transistors;
| 型号： | BC846S |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | General Purpose Transistors 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：277K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
BC846S ~BC850S
TECHNICAL DATA
General Purpose Transistors
NPN Silicon
• Moisture Sensitivity Level: 1
• ESD Rating – Human Body Model: >4000 V
– Machine Model: >400 V
3
2
1
MAXIMUM RATINGS
SOT–23
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
BC846
65
45
30
BC847, BC850
BC848, BC849
3
COLLECTOR
Collector–Base Voltage
Vdc
Vdc
BC846
BC847, BC850
BC848, BC849
80
50
30
1
BASE
Emitter–Base Voltage
2
BC846
BC847, BC850
BC848, BC849
6.0
6.0
5.0
EMITTER
Collector Current – Continuous
I
C
100
mAdc
MARKING DIAGRAM
3
xx
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
xx= Device Marking
(See Table Below)
Total Device Dissipation FR–5 Board
(Note 1.)
P
D
225
mW
T
= 25°C
A
Derate above 25°C
1.8
mW/°C
°C/W
Thermal Resistance,
Junction to Ambient (Note 1.)
R
556
JA
D
Total Device Dissipation
Alumina Substrate (Note 2.)
P
300
mW
T
= 25°C
A
Derate above 25°C
2.4
mW/°C
°C/W
Thermal Resistance,
Junction to Ambient (Note 2.)
R
417
JA
Junction and Storage
Temperature Range
T , T
J stg
–55 to
+150
°C
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2008. 01. 18
Revision No : 0
1/6
BC846S ~ BC850S
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
1A
Package
SOT-23
Shipping
BC846S-A
3000/Tape&Reel
1B
1C
BC846S-B
SOT-23
SOT-23
3000/Tape&Reel
3000/Tape&Reel
BC846S-C
BC847S-A
1E
1F
1G
SOT-23
SOT-23
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
BC847S-B
BC847S-C
SOT-23
SOT-23
BC848S-A
BC848S-B
1J
3000/Tape&Reel
3000/Tape&Reel
1K
SOT-23
SOT-23
BC848S-C
BC849S-B
BC849S-C
1L
2B
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
SOT-23
SOT-23
2C
2F
SOT-23
SOT-23
BC850S-B
BC850S-C
3000/Tape&Reel
3000/Tape&Reel
2G
2008. 01. 18
Revision No : 0
2/6
BC846S ~ BC850S
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC846A,B
V
65
45
30
–
–
–
–
–
–
V
(BR)CEO
(I = 10 mA)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
C
Collector–Emitter Breakdown Voltage BC846A,B
V
80
50
30
–
–
–
–
–
–
V
V
V
(BR)CES
(I = 10 µA, V
C EB
= 0)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
Collector–Base Breakdown Voltage
BC846A,B
V
80
50
30
–
–
–
–
–
–
(BR)CBO
(I = 10 A)
C
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
Emitter–Base Breakdown Voltage
BC846A,B
V
6.0
6.0
5.0
–
–
–
–
–
–
(BR)EBO
(I = 1.0 A)
E
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
Collector Cutoff Current (V
= 30 V)
I
–
–
–
–
15
5.0
nA
µA
CB
CBO
(V
CB
= 30 V, T = 150°C)
A
ON CHARACTERISTICS
DC Current Gain
(I = 10 µA, V
C CE
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
h
FE
–
–
–
90
150
270
–
–
–
–
= 5.0 V)
(I = 2.0 mA, V
C CE
= 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B,
BC849B, BC850B
110
200
180
290
220
450
BC847C, BC848C, BC849C, BC850C
420
520
800
Collector–Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)
V
–
–
–
–
0.25
0.6
V
V
C
B
CE(sat)
(I = 100 mA, I = 5.0 mA)
C
B
Base–Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)
V
–
–
0.7
0.9
–
–
C
C
B
B
BE(sat)
(I = 100 mA, I = 5.0 mA)
Base–Emitter Voltage (I = 2.0 mA, V
= 5.0 V)
= 5.0 V)
V
BE(on)
580
–
660
–
700
770
mV
C
CE
CE
(I = 10 mA, V
C
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
f
100
–
–
–
–
MHz
T
(I = 10 mA, V
= 5.0 Vdc, f = 100 MHz)
= 10 V, f = 1.0 MHz)
Noise Figure (I = 0.2 mA,
C
CE
Output Capacitance (V
CB
C
4.5
pF
dB
obo
NF
C
(V
CE
= 5.0 Vdc, R = 2.0 kΩ
BC846A,B, BC847A,B,C, BC848A,B,C
BC849B,C, BC850B,C
–
–
–
–
10
4.0
S
f = 1.0 kHz, BW = 200 Hz)
2008. 01. 18
Revision No : 0
3/6
BC846S ~ BC850S
BC847, BC848, BC849, BC850
°
°
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
°
°
°
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
°
°
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
2008. 01. 18
Revision No : 0
4/6
BC846S ~ BC850S
BC846
°
°
Figure 7. DC Current Gain
Figure 8. “On” Voltage
°
θ
°
°
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
°
°
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
2008. 01. 18
Revision No : 0
5/6
BC846S ~ BC850S
SOT-23
NOTES:
A
3
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
S
B
1
2
V
G
C
H
J
D
K
0.037
0.95
0.037
0 95
0.079
2.0
0.035
0.9
0 031
0.8
inches
mm
2008. 01. 18
Revision No : 0
6/6
相关型号：
BC846S-TP
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-6
MCC
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