FDS3004S [FS]

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE;
FDS3004S
型号: FDS3004S
厂家: First Silicon Co., Ltd    First Silicon Co., Ltd
描述:

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE

高压 开关
文件: 总3页 (文件大小:360K)
中文:  中文翻译
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SEMICONDUCTOR  
FDS3004S/A/C  
TECHNICAL DATA  
HIGH VOLTAGE SURFACE MOUNT  
SWITCHING DIODE  
FEATURES  
Fast Switching Speed  
High Conductance  
3
High Reverse Breakdown Voltage Rating  
2
We declare that the material of product  
compliance with RoHS requirements.  
1
Ordering Information  
Device  
Marking  
Shipping  
SOT –23  
FDS3004S  
FDS3004A  
FDS3004C  
KAE  
KAD  
3000/Tape&Reel  
3000/Tape&Reel  
KAC  
3000/Tape&Reel  
FDS3004S  
FDS3004A  
FDS3004C  
Maximum Ratings @ Ta=25unless otherwise specified  
Characteristic  
Symbol  
VRRM  
VRWM  
VR  
Value  
350  
Unit  
Repetitive Peak Reverse Voltage  
V
V
V
Working Peak Reverse Voltage  
300  
DC Blocking Voltage  
RMS Reverse Voltage  
VR(RMS)  
IF  
212  
225  
Forward Continuous Current(Note 2)  
Peak Repetitive Forward Current(Note 2)  
Non-Repetitive Peak Forward Surge Current @t=1.0µs  
@t=1.0s  
mA  
mA  
IFRM  
625  
4.0  
IFSM  
A
1.0  
Power Dissipation(Note 2)  
Pd  
350  
mW  
℃/W  
Thermal Resistance Junction to Ambient Air(Note 2)  
Operating and Storage Temperature Range  
R0JA  
357  
Tj, TSTG  
-65 to +150  
Electrical Characteristics @ Ta=25unless otherwise specified, per element  
Characteristic  
Symbol Min  
Typ  
MAX  
Unit  
Test Condition  
Reverse Breakdown Voltage(Note 1)  
V(BR)R 350  
V
IR=100µA  
0.78  
0.93  
1.03  
30  
0.87  
1.0  
IF=20mA  
IF=100mA  
IF=200mA  
Forward Voltage(Note 1)  
VF  
V
1.25  
100  
100  
5.0  
nA VR=240V  
Reverse Current(Note 1)  
Total Capacitance  
IR  
35  
µA VR=240V, Tj=150  
pF VR=0V, f=1.0MHZ  
CT  
Trr  
1.0  
IF=IR=30mA  
ns  
Reverse Recovery Time  
50  
Irr=3.0mA, RL=100  
Notes: 1. Short duration test pulse used to minimize self-heating effect.  
2. Part mounted on FR-4 board with recommended pad layout.  
2011.12.19  
Revision No : 0  
1/2  
FDS3004S/A/C  
500  
400  
300  
200  
1000  
100  
10  
Tj = 150°C  
Tj = 25°C  
1.0  
0.1  
100  
0
0.01  
0
1600  
2000  
400  
800  
1200  
100  
0
200  
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)  
Fig. 2 Typical Forward Characteristics, per element  
TA, AMBIENT TEMPERA TURE, (°C)  
Fig. 1 Power Derating Curve, toatl package  
1.1  
1.0  
1000  
Tj = 150°C  
100  
10  
Tj = 75°C  
Tj = 25°C  
0.9  
1.0  
0.1  
0.8  
0.7  
0.01  
0.001  
100  
0.1  
10  
0.01  
1.0  
0
100  
150  
300 350  
50  
200 250  
VR, REVERSE VOLTAGE (V)  
VR, INSTANTANEOUS REVERSE VOLTAGE (V)  
Fig. 3 Typical Reverse Characteristics, per element  
Fig. 4 Typical Total Capacitance  
vs. Reverse Voltage, per element  
2011.12.19  
Revision No : 0  
2/3  
FDS3004S/A/C  
SOT-23  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M,1982  
A
3
L
2. CONTROLLING DIMENSION: INCH.  
INCHES  
MIN  
MILLIMETERS  
S
B
DIM  
1
2
MAX  
0.1197  
0.0551  
0.0440  
0.0200  
0.0807  
0.0040  
0.0070  
0.0285  
0.0401  
0.1039  
0.0236  
MIN  
2.80  
1.20  
0.89  
0.37  
1.78  
0.013  
0.085  
0.35  
0.89  
2.10  
0.45  
MAX  
3.04  
1.40  
1.11  
0.50  
2.04  
0.100  
0.177  
0.69  
1.02  
2.64  
0.60  
A
B
C
D
G
H
J
0.1102  
0.0472  
0.0350  
0.0150  
0.0701  
0.0005  
0.0034  
0.0140  
0.0350  
0.0830  
0.0177  
V
G
C
K
L
S
H
J
D
K
V
0 037  
0 95  
0 037  
0 95  
0 079  
2 0  
0 035  
0 9  
0 031  
0 8  
inches  
mm  
2011.12.19  
Revision No : 0  
3/3  

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