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FDS99RU3 [FS]

Dual Serise Switching Diodes;
FDS99RU3
型号： FDS99RU3
厂家： First Silicon Co., Ltd    First Silicon Co., Ltd
描述：

Dual Serise Switching Diodes
文件： 总4页 (文件大小：268K)
中文：  中文翻译
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SEMICONDUCTOR  
FDS99U / RU  
TECHNICAL DATA  
Dual Serise  
Switching Diodes  
Features  
3
1
•
We declare that the material of product  
2
FDS99U  
compliance with RoHS requirements.  
SOT-323 (SC-70)  
The FDS99U is a smaller package, equivalent to the FDS99S  
Suggested Applications  
FDS99RU  
SOT-323 (SC-70)  
• ESD Protection  
• Polarity Reversal Protection  
• Data Line Protection  
CATHODE  
2
ANODE  
1
• Inductive Load Protection  
• Steering Logic  
3
CATHODE/ANODE  
FDS99U  
ORDERING INFORMATION  
CATHODE  
1
ANODE  
2
Device  
Package  
Shipping  
FDS99U  
SOT–323(SC–70)  
SOT–323(SC–70)  
SOT–323(SC–70)  
SOT–323(SC–70)  
3000/Tape & Reel  
3000/Tape & Reel  
10000/Tape & Reel  
10000/Tape & Reel  
3
FDS99RU  
FDS99U3  
FDS99RU3  
CATHODE/ANODE  
FDS99RU  
DEVICE MARKING  
FDS99U = A7;  
FDS99RU = F7  
MAXIMUM RATINGS (Each Diode)  
Rating  
Symbol  
Value  
Unit  
Vdc  
Reverse Voltag  
VR  
IF  
70  
215  
500  
70  
Forward Current  
mAdc  
mAdc  
V
Peak Forward Surge Current  
Repetitive Peak Reverse Voltage  
Average Rectified Forward  
Current (Note 1.)  
IFM(surge)  
VRRM  
IF(AV)  
715  
mA  
(averaged over any 20 ms period)  
Repetitive Peak Forward Current  
Non–Repetitive Peak Forward Current  
t = 1.0 µs  
IFRM  
IFSM  
450  
mA  
A
2.0  
1.0  
0.5  
t = 1.0 ms  
t = 1.0 S  
1. FR–5 = 1.0 × 0.75 × 0.062 in.  
2008. 11. 3  
Revision No : 0  
1/4  
FDS99U / RU  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
PD  
200  
mW  
FR–5 Board, (Note 1.) TA = 25°C  
Derate above 25°C  
1.6  
625  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance Junction to Ambient  
Total Device Dissipation  
RθJA  
PD  
Alumina Substrate, (Note 2.) TA = 25°C  
Derate above 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
RθJA  
TJ,Tstg  
–65 to +150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)  
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Reverse Breakdown Voltage  
(I(BR) = 100 µA)  
V(BR)  
IR  
70  
––  
––  
––  
––  
––  
2.5  
30  
Vdc  
Reverse Voltage Leakage Current (VR = 70 Vdc)  
(VR = 25 Vdc, TJ = 150°C)  
µAdc  
(VR = 70 Vdc, TJ = 150°C)  
50  
Diode Capacitance  
(VR = 0, f = 1.0 MHz)  
Forward Voltage  
CD  
VF  
1.5  
pF  
(IF = 1.0 mAdc)  
(IF = 10 mAdc)  
(IF = 50 mAdc)  
(IF = 150 mAdc)  
––  
––  
––  
––  
715  
855  
mVdc  
1000  
1250  
Reverse Recovery Time  
RL = 100 Ω  
trr  
––  
––  
6.0  
ns  
V
(IF=IR=10 mAdc, iR(REC)=1.0mAdc) (Figure 1)  
Forward Recovery Voltage (IF = 10 mA, t r = 20 ns)  
VFR  
1.75  
1. FR–5 = 1.0 × 0.75 × 0.062 in.  
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.  
2.0 k  
820 Ω  
+10 V  
I F  
t p  
t r  
t
0.1µF  
I F  
100 µH  
0.1 µF  
t rr  
t
10%  
90%  
D.U.T.  
i R(REC) = 1.0 mA  
50 Ω INPUT  
50 Ω OUTPUT  
PULSE  
GENERATOR  
I R  
OUTPUT PULSE  
SAMPLING  
INPUT SIGNAL  
V R  
(I F = I R = 10 mA; MEASURED  
at i R(REC) = 1.0 mA)  
OSCILLOSCOPE  
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.  
2. Input pulse is adjusted so I R(peak) is equal to 10mA.  
3. t p » t rr  
Figure 1. Recovery Time Equivalent Test Circuit  
2008. 11. 3  
Revision No : 0  
2/4  
FDS99U / RU  
10  
100  
10  
1.0  
0.1  
1 0  
0.1  
0 01  
0.001  
0
10  
20  
30  
40  
50  
0.2  
0.4  
0.6  
0 8  
1.0  
1 2  
VR , REVERSE VOLTAGE (VOLTS)  
VF , FORWARD VOLTAGE (VOLTS)  
Figure 3. Leakage Current  
Figure 2. Forward Voltage  
0.68  
0.64  
0.60  
0.56  
0.52  
0
2
4
6
8
VR , REVERSE VOLTAGE (VOLTS)  
Figure 4. Capacitance  
2008. 11. 3  
Revision No : 0  
3/4  
FDS99U / RU  
SC−70 (SOT−323)  
D
MILLIMETERS  
INCHES  
e1  
DIM  
MIN  
0.80  
0.00  
NOM  
0.90  
0.05  
0.7 REF  
0.35  
0.18  
2.10  
1.24  
1.30  
0.65 BSC  
MAX  
1.00  
0.10  
MIN  
0 032  
0 000  
NOM  
0.035  
0.002  
0.028 REF  
0.014  
0.007  
0.083  
0.049  
0.051  
0.026 BSC  
MAX  
0 040  
0 004  
A
A1  
A2  
b
c
D
E
e
e1  
3
0 016  
0 010  
0 087  
0 053  
0 055  
0.30  
0.10  
1.80  
1.15  
1.20  
0.40  
0.25  
2.20  
1.35  
1.40  
0 012  
0 004  
0 071  
0 045  
0 047  
E
H
E
1
2
0.425 REF  
2.10  
0.017 REF  
0.083  
L
H
E
b
2.00  
2.40  
0 079  
0 095  
e
c
A2  
A
0.05 (0.002)  
L
A1  
SOLDERING FOOTPRINT*  
0.65  
0.025  
0.65  
0.025  
1.9  
0.075  
0.9  
0.035  
0.7  
0.028  
mm  
inches  
SCALE 10:1  
2008. 11. 3  
Revision No : 0  
4/4  

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