FDZS36 [FS]
Zener Voltage Regalators;型号: | FDZS36 |
厂家: | First Silicon Co., Ltd |
描述: | Zener Voltage Regalators |
文件: | 总4页 (文件大小:246K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FDZS2.4 ~ FDZS75
TECHNICAL DATA
We declare that the material of product
compliance with RoHS requirements.
3
ESD Rating of Class 3 (>16 kV) per Human Body Model
2
1
SOT–23
3
1
Cathode
Anode
MAXIMUM CASE TEMPERATURE FOR SOLDERING
PURPOSES: 260°C for 10 seconds
THERMALCHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board*
TA = 25°C
PD
225
mW
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance Junction to Ambient
Total Device Dissipation
RQJA
PD
Alumina Substrate,** TA = 25°C
Derate above 25°C
2.4
417
mW/°C
°C/W
°C
Thermal Resistance Junction to Ambient
Junction and Storage Temeprature
R QJA
T J , Tstg
-55to+125
**FR-5 = 1.0 x 0.75 x 0.62 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Ordering Information
Device
Package
SOT-23
Shipping
FDZSXX SERIES
3000/Tape&Reel
2009. 05. 08
Revision No : 0
1/4
FDZS2.4 ~ FDZS75
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)
A
F
F
V
@ I
(Note 3)
(Volts)
= 5 mA
V
(V)
= 1 mA
V
(V)
= 20 mA
Max Reverse
Leakage
Current
Z1
Z2
Z3
VZ
(mV/k)
@ I
@ I
ZT1
ZT2
(Note 3)
ZT3
(Note 3)
Z
(
Z
(
Z
ZT3
= 5 mA
ZT1
)
ZT2
)
@ I
ZT1
(
)
C (pF)
I
V
Volts
Device
Marking
@ I
=
@ I
=
@ I
20 mA
=
@ V = 0
R
A
R
ZT1
ZT2
ZT3
R
@
Min
Nom
2.4
2.7
3
Max
2.6
Min
1.7
Max
2.1
2.4
2.7
2.9
3.3
3.5
4
Min
Max
3.2
Min
Max
0
Device*
FDZS2.4
5 mA
100
100
95
1mA
600
600
600
f = 1 MHz
450
Z11
Z12
Z13
Z14
Z15
Z16
W9
Z1
2 2
2 5
2.6
3
50
50
20
10
5
1
1
−3 5
−3 5
−3 5
−3 5
−3 5
−3 5
−3 5
−3.5
−2.7
−2.0
0.4
FDZS2.7
FDZS3.0
2.9
1.9
3.6
50
0
450
2 8
3.2
2.1
3.3
3.6
3.9
4.1
4.4
4.5
5
3.9
50
1
0
450
3.1
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
3.5
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
2.3
600
600
600
600
500
480
400
150
80
4.2
40
40
30
30
15
15
10
6
1
0
450
450
450
450
260
225
200
185
155
140
135
130
130
130
130
120
110
105
100
85
FDZS3 3
FDZS3.6
3.4
3.8
2.7
4.5
5
1
0
3.7
4.1
2.9
4.7
3
1
−2 5
0
FDZS3 9
FDZS4 3
FDZS4.7
FDZS5.1
FDZS5 6
4
4.6
3.3
5.1
3
1
4.4
5
3.7
4.7
5.3
6
5.4
3
2
0.2
1.2
2.5
3.7
4 5
5 3
6 2
7 0
8 0
9 0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Z2
4.8
5.4
4.2
5.9
2
2
Z3
5.2
6
4.8
5.2
5.8
6.4
7
6.3
1
2
Z4
5.8
6.6
5.6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14
6.8
3
4
FDZS6 2
FDZS6.8
FDZS7 5
Z5
6.4
7.2
6.3
7.4
6
2
4
1 2
Z6
7
7.9
6.9
80
8
6
1
5
2 5
FDZS8 2
FDZS9.1
Z7
7.7
8.7
7.6
80
7.7
8.5
9.4
10.4
11.4
12.5
13.9
15.4
16.9
18.9
20.9
22.9
8.8
6
0.7
0.5
5
3 2
Z8
8 5
9.6
8.4
100
150
150
150
170
200
200
225
225
250
250
9.7
8
6
3 8
Z9
9.4
10 6
11.6
12.7
14.1
15 6
17.1
19.1
21 2
23 3
25 6
9.3
10.7
11.8
12.9
14 2
15.7
17 2
19.2
21.4
23.4
25.7
10
10
10
15
20
20
20
20
25
25
0.2
7
4 5
FDZS10
FDZS11
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
11
10 2
11.2
12 3
13.7
15 2
16.7
18.7
20.7
22.7
0.1
8
5.4
12
0.1
8
6.0
FDZS12
FDZS13
FDZS15
13
0.1
8
7 0
15
15.5
17
0 05
0 05
0.05
0 05
0 05
0 05
10.5
11.2
12.6
14
15.4
16.8
9 2
16
10.4
12.4
14.4
16.4
18.4
FDZS16
FDZS18
18
19
FDZS20
FDZS22
FDZS24
20
21.1
23.2
25.5
22
85
24
80
V
Below
= 0.1 m-
A
Max Reverse
Leakage
Current
Z2
VZ
V
@ I
Below
@ I
V Below
Z3
(mV/k) Below
@ I = 2 mA
ZT1
Z1
ZT2
Z
Z
Z
= 2 mA
@ I
= 10 mA
ZT1
ZT2
ZT3
ZT1
ZT3
Below
Below
Below
C (pF)
I
V
R
Device
Marking
@ I
2 mA
=
@ I
0.5 mA
=
@ I
10 mA
=
@ V = 0
R
f = 1 MHz
R
A
ZT1
ZT4
ZT3
@
Min
Nom
Max
28 9
32
Min
Max
28.9
32
Min
Max
29 3
32.4
35.4
38.4
41 5
46 5
50 5
54 6
60 8
67
(V)
18.9
21
Min
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
Device
Y10
Y11
Y12
Y13
Y14
Y15
Y16
Y17
Y18
Y19
Y20
Y21
25.1
28
31
34
37
40
44
48
52
58
64
70
27
30
33
36
39
43
47
51
56
62
68
75
80
80
25
300
300
325
350
350
375
375
400
425
450
475
500
25.2
28.1
31.1
34.1
37.1
40.1
44.1
48.1
52.1
58.2
64.2
70.3
45
50
0 05
0 05
0 05
0 05
0 05
0 05
0 05
0 05
0 05
0 05
0 05
0 05
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
70
FDZS27
FDZS30
FDZS33
27 8
30 8
33 8
36.7
39.7
43.7
47 6
51 5
57.4
63.4
69.4
70
70
70
45
40
40
40
40
35
35
35
35
80
35
55
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
FDZS36
FDZS39
38
90
38
60
41
130
150
170
180
200
215
240
255
41
70
46
46
80
FDZS43
FDZS47
50
50
90
54
54
100
110
120
130
140
FDZS51
FDZS56
FDZS62
60
60
66
66
72
72
73 2
80 2
FDZS68
FDZS75
79
79
Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.
Z
2009. 05. 08
Revision No : 0
2/4
FDZS2.4 ~ FDZS75
TYPICALCHARACTERISICS
1000
1000
T
A = 25°C
0 V BIAS
1 V BIAS
100
10
1
100
10
+150°C
0.1
BIAS AT
50% OF V Z NOM
001
+25°C
–55°C
0 001
0 0001
1
1
000001
10
100
0
10
20
30
40
50
60
70
80
90
V Z , NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
V Z , NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
100
10
1
100
10
T
A = 25°C
T
A = 25°C
1
0.1
0
0.1
0.01
10
30
50
70
90
0
2
4
6
8
10
12
V Z , ZENER VOLTAGE (V)
V Z , ZENER VOLTAGE (V)
Figure 7. Zener Voltage versus Zener Current
(V Z Up to 12 V)
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
2009. 05. 08
Revision No : 0
3/4
FDZS2.4 ~ FDZS75
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
2009. 05. 08
Revision No : 0
4/4
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