FTA8550SQLT1G [FS]
General Purpose Transistors PNP Silicon;
| 型号： | FTA8550SQLT1G |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | General Purpose Transistors PNP Silicon |
| 文件： | 总3页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTA8550S
TECHNICAL DATA
General Purpose Transistors
PNP Silicon
FEATURE
3
High current capacity in compact package.
I
C =1.5A.
1
Epitaxial planar type.
2
PNP complement: FTC8050S
Pb-Free Package is available.
SOT–23
DEVICE MARKING AND ORDERING INFORMATION
COLLECTOR
3
Shipping
Device
Marking
1HB
(Pb-Free)
3000/Tape&Reel
FTA8550SPLT1G
1
BASE
1HD
(Pb-Free)
3000/Tape&Reel
FTA8550SQLT1G
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
V
Collector-Emitter Voltag
Collector-Base Voltag
Emitter-Base Voltag
25
40
CEO
CBO
EBO
V
V
V
V
V
5
Collector Current-continuou
IC
1500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,(1)
PD
TA =25℃
225
1.8
mW
Derate above 25℃
mW/ C
C/W
R
556
θJA
Thermal Resistance,Junction to Ambient
Total Device Dissipation
PD
Alumina Substrate,(2) TA=25℃
Derate above 25℃
300
2.4
mW
mW/ C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
R
C/W
C
θJA
417
-55 to +150
T , T
j
stg
2007. 6. 20
Revision No : 1
1/3
FTA8550S
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
–
–
–
–
–
–
V
25
5
V
V
V
(BR)CEO
Emitter-Base Breakdown Voltage
(IE=100 µΑ)
V
(BR)EBO
Collector-Base Breakdown Voltage
(IC=100 µΑ)
V
(BR)CBO
40
Collector Cutoff Current (VCB =35V)
Emitter Cutoff Current (VEB =4V)
–
–
–
–
150
150
nA
nA
ICBO
IEBO
-
ELECTRICAL CHARACTERISTICS (T
Characteristic
A
=25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
120
-
-
-
600
0.5
IC=100mA,VCE =1V
Collector-Emitter Saturation Voltage
(IC=800mA I B=80mA)
VCE(S)
V
P
Q
R
S
NOTE:
*
hFE
120~200
150~300
200~400
300~600
2007. 6. 20
Revision No : 1
2/3
FTA8550S
SOT -23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
3
L
2. CONTROLLING DIMENSION: INCH.
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
0.1102
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
A
B
C
D
G
H
J
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
V
G
C
K
L
S
H
J
D
K
V
PIN1 BASE
2 EMITTER
3 COLLECTOR
0 037
0 95
0 037
0 95
0 079
2 0
0 035
0 9
0 031
0 8
inches
mm
2007. 6. 20
Revision No : 1
3/3
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